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hydride vapor phase epitaxy (368) 368
physics, applied (340) 340
epitaxy (292) 292
materials science, multidisciplinary (269) 269
crystallography (252) 252
hydrides (239) 239
vapor phase epitaxy (226) 226
a3. hydride vapor phase epitaxy (182) 182
gallium nitrides (180) 180
gan (171) 171
hydrid (157) 157
nitrides (153) 153
growth (140) 140
liquors (133) 133
sapphire (133) 133
gasphasenepitaxie (123) 123
b1. nitrides (122) 122
substrates (105) 105
films (103) 103
gallium nitride (102) 102
vapor-phase epitaxy (100) 100
epitaxial growth (98) 98
layers (96) 96
hvpe (95) 95
drei-fünf-verbindung (89) 89
crystal growth (84) 84
galliumnitrid (83) 83
materials science (79) 79
physics, condensed matter (73) 73
semiconducting iii-v materials (70) 70
analysis (69) 69
crystals (66) 66
galliumverbindung (63) 63
deposition (62) 62
vapor phases (62) 62
photoluminescence (61) 61
defects (59) 59
hydride (58) 58
aluminum nitride (56) 56
halbleiterwachstum (56) 56
dampfphasenepitaxie (55) 55
gasphasenepitaxialwachstum (55) 55
dislocations (54) 54
b2. semiconducting iii–v materials (53) 53
silicon (52) 52
halbleiterepitaxialschicht (49) 49
saphir (49) 49
aln (47) 47
chemical vapor deposition (47) 47
optical properties (47) 47
halbleiter mit grosser energielücke (46) 46
gallium compounds (45) 45
b2. semiconducting iii-v materials (44) 44
density (44) 44
hydride vapor-phase epitaxy (44) 44
gaas (43) 43
nitrid (43) 43
engineering, electrical & electronic (41) 41
gallium arsenide (41) 41
light-emitting-diodes (39) 39
x-ray diffraction (39) 39
crystal structure (37) 37
photolumineszenz (37) 37
gallium nitrate (36) 36
epitaxial lateral overgrowth (35) 35
kristallqualität (35) 35
molecular beam epitaxy (35) 35
morphology (35) 35
reduction (35) 35
versetzungsdichte (35) 35
saphirsubstrat (34) 34
transmission electron microscopy (33) 33
aluminum compounds (32) 32
molecular-beam epitaxy (32) 32
substrate (32) 32
hydride vapour phase epitaxy (31) 31
physics (31) 31
thin films (31) 31
characterization (30) 30
dislocation density (30) 30
epitaxialschicht (30) 30
a1. characterization (29) 29
impurities (29) 29
nanowires (28) 28
wachstumsrate (28) 28
wafers (28) 28
chemistry, physical (27) 27
nucleation (27) 27
cathodoluminescence (26) 26
hydrogen compounds (26) 26
pufferschicht (26) 26
semiconductors (26) 26
surface (26) 26
atomic force microscopy (25) 25
b2. semiconducting gallium compounds (25) 25
chemistry (25) 25
diodes (25) 25
gallium arsenides (25) 25
röntgenbeugung (25) 25
solar cells (25) 25
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Nature communications, ISSN 2041-1723, 07/2019, Volume 10, Issue 1, pp. 3361 - 8
We report gallium arsenide (GaAs) growth rates exceeding 300 µm h using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium... 
Solar cells | Growth conditions | Gallium | Growth rate | Intermetallic compounds | Gallium arsenide | Circuits | Epitaxy | Vapor phases | Gallium indium phosphide | Vapors | Hydrides | Indium | Vapor phase epitaxy | Photovoltaic cells | Efficiency | Kinetics | Epitaxial growth | Deposition | Arsenides | Energy conversion efficiency | MATERIALS SCIENCE | solar cells | SOLAR ENERGY | electronic devices
Journal Article
physica status solidi (a), ISSN 1862-6300, 02/2020, Volume 217, Issue 3, pp. 1900629 - n/a
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 12/2018, Volume 57, Issue 12, p. 125505
High-quality semipolar (1013) GaN is successfully grown on carbon nanotube-patterned sapphire (CNTPS) by hydride vapor phase epitaxy (HVPE). The... 
Mass production | Isotropy | Vapor phase epitaxy | Sapphire | Vapor phases | Carbon nanotubes | Hydrides | Epitaxial growth
Journal Article
中国物理快报:英文版, ISSN 0256-307X, 2015, Volume 32, Issue 8, pp. 173 - 176
Hydride vapor phase epitaxy (HVPE) is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy... 
HVPE | MOVPE生长 | 氢化物气相外延 | GaN薄膜 | 原子力显微镜 | 蓝宝石 | 拉曼散射光谱 | 金属有机 | YELLOW LUMINESCENCE | POLAR | PHYSICS, MULTIDISCIPLINARY | DEPOSITION | Reduction | Vapor phase epitaxy | Diffraction | Sapphire | Anisotropy | Morphology | Spectrometers | Hydrides
Journal Article
Applied Physics Express, ISSN 1882-0778, 10/2010, Volume 3, Issue 10, pp. 101003 - 101003-3
The current--voltage characteristics of Schottky barrier diodes formed on GaN(0001) free-standing substrates with net donor concentrations of $7.6\times... 
FLUX | SINGLE-CRYSTALS | DISLOCATIONS | PHYSICS, APPLIED | RECTIFIERS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2014, Volume 387, pp. 101 - 105
Semipolar {101̄3̄} GaN layers were grown on self-assembled SiO2 nanospheres sapphire (SSNS) by hydride vapor phase epitaxy. The RMS roughness was 1.1nm for the... 
B1. Sapphire | A3. Hydride vapor phase epitaxy | B1. Semipolar GaN | B2. SiO2 nanospheres | B2. SiO | nanospheres | PHYSICS, APPLIED | REDUCTION | Sapphire | Semipolar GaN | SiO2 nanospheres | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | GALLIUM NITRIDE FILMS | CRYSTALLOGRAPHY | Hydride vapor phase epitaxy | Vapor phase epitaxy | Nanospheres | Gallium nitrides | X-rays | Hydrides | Silicon dioxide | Dislocations
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 05/2013, Volume 370, pp. 249 - 253
GaN epilayers were grown on Si(111) at 980°C by a hydride vapor phase epitaxy (HVPE) method. AlxGa1−xN with thickness of ∼900nm was inserted between Si... 
B1. GaN | A3. Hydride vapor phase epitaxy | A1. X-ray diffraction | A1. Substrates | PHYSICS, APPLIED | FILMS | REDUCTION | GaN | INTERMEDIATE LAYERS | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | X-ray diffraction | CRYSTALLOGRAPHY | Hydride vapor phase epitaxy | STRESS | Substrates | Atomic force microscopy | Liquors | Epitaxy | Analysis | Methods
Journal Article
physica status solidi (a), ISSN 1862-6300, 05/2018, Volume 215, Issue 10, pp. 1700491 - n/a
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2016, Volume 456, pp. 145 - 150
The growth of thick InGaN layers on free-standing GaN (0001¯) substrates was studied using tri-halide vapor phase epitaxy. It was found that... 
A3. Chloride vapor phase epitaxy | B2. Semiconducting indium compounds | A3. Hydride vapor phase epitaxy | B1. Nitrides | Epitaxy | Liquors | Nitrides | Indium
Journal Article
Electrochimica Acta, ISSN 0013-4686, 07/2015, Volume 171, pp. 89 - 95
An investigation into the photo-electrochemical (PEC) etching of free-standing GaN wafers produced by hydride vapor phase epitaxial growth (HVPE) has found... 
Hydride vapor phase epitaxy (HVPE) | Free-standing wafer | Subsurface damage | Gallium nitride | Photo-electrochemical etching | ELECTROCHEMISTRY | HVPE | WET | N-TYPE GAN | CRYSTAL | CATALYST | DISLOCATION DENSITY | Liquors | Chemical properties | Epitaxy | Analysis | Electric properties | Nitrides | Electrolytes | Mechanical engineering
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2017, Volume 461, pp. 25 - 29
GaN layers of thickness 0.5–1.3mm were grown at 1280°C at a growth rate of 95–275µm/h by tri-halide vapor-phase epitaxy on nonpolar m-plane (101̅0) and... 
B1. Nitrides | B2. Semiconducting III-V materials | A1. Substrates | A3. Hydride vapor-phase epitaxy
Journal Article