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Journal of solid state electrochemistry, ISSN 1433-0768, 12/2007, Volume 12, Issue 10, pp. 1205 - 1218
Journal Article
Jpn J Appl Phys, ISSN 0021-4922, 11/2010, Volume 49, Issue 11, pp. 110208 - 110208-3
The p-type conductivity of H-terminated diamond surface can be linked to adsorption of a specific gas species on the surface... 
Physical Sciences | Physics | Science & Technology | Physics, Applied
Journal Article
IEEE electron device letters, ISSN 0741-3106, 07/2006, Volume 27, Issue 7, pp. 570 - 572
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2011, Volume 7995
In this work, H-terminated (110) diamond film, a novel active material for high-frequency and high-power field-effect transistors (FETs... 
Diamond film | Grain orientation | HFCVD | Hydrogen-terminated
Conference Proceeding
Physica status solidi. PSS-RRL. Rapid research letters, ISSN 1862-6254, 03/2018, Volume 12, Issue 3, pp. 1700401 - n/a
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 11/2020, Volume 67, Issue 11, pp. 4784 - 4788
A normally OFF hydrogen-terminated diamond (H-terminated diamond) field-effect transistor (FET... 
Two dimensional hole gas | Fabrication | Temperature measurement | hydrogen-terminated | Field effect transistors | Ti/TiOₓ | Logic gates | Diamond | field-effect transistor (FET) | normally off
Journal Article
Journal of physics. Condensed matter, ISSN 1361-648X, 08/2016, Volume 28, Issue 30, pp. 305001 - 305001
Synchrotron-based photoelectron spectroscopy experiments are presented that address a long standing inconsistency in the treatment of the C1s core level of hydrogen terminated (1 0 0) diamond... 
photoelectron spectroscopy | diamond surface | hydrogen-terminated diamond | Physics, Condensed Matter | Physical Sciences | Physics | Science & Technology
Journal Article
IEEE electron device letters, ISSN 1558-0563, 01/2020, Volume 41, Issue 1, pp. 119 - 122
.... Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si... 
Electric breakdown | 2DHG | Conductivity | Diamond | Gallium nitride | Substrates | CMOS | GaN | p-channel | Si | hydrogen terminated | Thermal conductivity | Transistors | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
Journal Article
IEEE electron device letters, ISSN 0741-3106, 10/2012, Volume 33, Issue 10, pp. 1471 - 1473
Homoepitaxial diamond has been used to demonstrate the RF performance of 50-nm gate length hydrogen-terminated diamond field-effect transistors... 
Radio frequency | Resistance | Performance evaluation | RF performance | Field-effect transistor (FET) | homoepitaxial diamond | hydrogen terminated | Logic gates | Diamond-like carbon | Electrical resistance measurement | Equivalent circuits | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
Journal Article
Applied surface science, ISSN 0169-4332, 05/2016, Volume 370, pp. 496 - 500
Journal Article
Vacuum, ISSN 0042-207X, 02/2020, Volume 172, p. 109046
Journal Article
Diamond and related materials, ISSN 0925-9635, 03/2017, Volume 73, pp. 182 - 189
Journal Article
The Journal of physics and chemistry of solids, ISSN 0022-3697, 07/2019, Volume 130, pp. 111 - 119
As we know that more effective synthesis of diamond combined with physical and chemical properties of hydrogen termination in aqueous environment as well as device structure design can greatly... 
Hydrogen-terminated polycrystalline diamond | Direct-current properties | Surface repairing | Negative potential sweep | Physics, Condensed Matter | Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Physics | Science & Technology | Chemical properties | Hydrogen | Maintenance and repair | Organic acids | Electric properties
Journal Article