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Journal of Lightwave Technology, ISSN 0733-8724, 01/2016, Volume 34, Issue 2, pp. 278 - 285
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 10/2017, Volume 29, Issue 19, pp. 1627 - 1630
We demonstrate a two-element symmetric-connected photodiode array (SC-PDA) for high-power and high-speed applications. A traditional traveling-wave photodiode... 
Optical fibers | Radio frequency | Handheld computers | Optical device fabrication | p-i-n photodiodes | microwave photonics | Frequency response | Photodetectors | Photodiodes | Photoconductivity | PHYSICS, APPLIED | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Journal of Quantum Electronics, ISSN 0018-9197, 02/2020, Volume 56, Issue 1, pp. 1 - 6
We comprehensively study the characteristics of dark current for a p-i-n heterostructure photodiode. To reduce the dark current, a wide-bandgap layer (AlGaSb)... 
Temperature measurement | room temperature | Density measurement | Current measurement | Detectors | Dark current | activation energy | p-i-n diode">p-i-n diode | Photodiodes | heterostructure | Surface treatment | p-i-n diode | QUANTUM SCIENCE & TECHNOLOGY | PHYSICS, APPLIED | PERFORMANCE | NBN PHOTODETECTORS | GAAS | ENGINEERING, ELECTRICAL & ELECTRONIC | DETECTORS | ENHANCEMENT | OPTICS
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 11/2014, Volume 20, Issue 6, pp. 57 - 63
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 02/2017, Volume 29, Issue 3, pp. 302 - 305
We report uni-traveling-carrier photodiodes with a quantum efficiency of 98% ±0.8% at 1064 nm. For 50 μm devices, the measured 3-dB bandwidth is 2 GHz and the... 
Voltage measurement | Current measurement | Wavelength measurement | quantum efficiency | Bandwidth | Dark current | uni-travelling-carrier | Photodiode | Photodiodes | Coatings | quantum information | PHYSICS, APPLIED | I-N PHOTODIODES | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Quantum efficiency | Activation energy
Journal Article
Optics Express, ISSN 1094-4087, 08/2017, Volume 25, Issue 16, pp. 19487 - 19496
Germanium photodetectors are considered to be mature components in the silicon photonics device library. They are critical for applications in sensing,... 
ON-SI PHOTODETECTORS | I-N PHOTODETECTOR | GERMANIUM PHOTODETECTOR | SILICON PHOTONICS | OPTICS | BANDWIDTH | Photonic | Optics | Micro and nanotechnologies | Microelectronics | Engineering Sciences
Journal Article
physica status solidi (a), ISSN 1862-6300, 05/2018, Volume 215, Issue 9, pp. 1700521 - n/a
InGaN ternary alloys with their band gaps varying from 0.7 to 3.4 eV, are very promising for photodetector devices operating from UV to IR wavelength range.... 
InGaN thickness | InGaN/GaN | Silvaco‐Atlas simulation | p–i–n photodiodes | Silvaco-Atlas simulation | PHYSICS, CONDENSED MATTER | TRANSPORT | PHYSICS, APPLIED | GaN | MATERIALS SCIENCE, MULTIDISCIPLINARY | InGaN | p-i-n photodiodes | OPTIMIZATION | LIFETIME | Thickness | Electric potential | Transit time | Gallium nitrides | Ternary alloys | Rapid prototyping | Frequency response | Photodiodes
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2010, Volume 97, Issue 19, pp. 191103 - 191103-3
We report the fabrication and characterization of the solar-blind AlGaN avalanche photodiodes grown by metal-organic chemical vapor deposition on c -plane... 
PHYSICS, APPLIED | I-N PHOTODIODES
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 03/2016, Volume 813, pp. 1 - 9
Journal Article
Optics Express, ISSN 1094-4087, 02/2018, Volume 26, Issue 3, pp. 3568 - 3576
Avalanche photodiodes (APDs) with thin avalanche regions have shown low excess noise characteristics and high gain-bandwidth products, so they are suited for... 
OPTICS | MULTIPLICATION NOISE | SEMICONDUCTORS | P(+)-I-N(+) DIODES
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 06/2016, Volume 28, Issue 11, pp. 1189 - 1192
In this letter, a high-performance 4H-SiC p-i-n ultraviolet (UV) photodiode (PD) with its p layer formed by Al implantation is designed and fabricated. The... 
Temperature measurement | Al implantation | Temperature | Ion implantation | ultraviolet photodiode | Silicon carbide | PIN photodiodes | Current measurement | Dark current | 4H-SiC | p-i-n | high temperature | PHYSICS, APPLIED | TEMPERATURE | PROGRESS | OPTICS | CAPACITANCE | DEPENDENCE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2010, Volume 57, Issue 10, pp. 2631 - 2638
Journal Article
Optics Communications, ISSN 0030-4018, 12/2014, Volume 333, pp. 182 - 186
We report on high-performance 4H-SiC-based p-i-n ultraviolet (UV) photodiodes and investigation of the capacitance characteristics. The fabricated p-i-n... 
Capacitance | Ultraviolet photodiode | 4H-SiC | p-i-n | TEMPERATURE | A-SI-H | ABSORPTION | OPTICS | DEPENDENCE | Investigations | Silicon carbide
Journal Article
IET Optoelectronics, ISSN 1751-8768, 6/2017, Volume 11, Issue 3, pp. 103 - 107
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 02/2019, Volume 27, Issue 4, pp. 5798 - 5813
We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode, exhibiting a 3-dB bandwidth... 
I-N PHOTODETECTOR | LASERS | OPTICS | GERMANIUM-TIN | EFFICIENCY | DARK CURRENT
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 09/2019, Volume 27, Issue 19, pp. 26924 - 26939
High-perfonnance GeSn multiple-quantum-well (MQW) photodiode is demonstrated on a 200 mm Ge-on-insulator (GeOI) photonics platform for the first time. Both... 
QUANTUM-DOT LASERS | GERMANIUM-TIN | WAVELENGTH | SILICON | I-N PHOTODETECTOR | LIGHT-EMISSION | OPTICS | DARK CURRENT
Journal Article
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