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by H. Ohno
Science, ISSN 0036-8075, 8/1998, Volume 281, Issue 5379, pp. 951 - 956
Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron... 
Material films | Temperature dependence | Charge carriers | Semiconductors | Magnetization | Materials | Solubility | Ferromagnetism | Review | Magnetic fields | Electrons | GAAS | MULTIDISCIPLINARY SCIENCES | III-V SEMICONDUCTORS | Ferromagnetic materials | Materials science | Research | Innovations | Magnetism
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 0163-1829, 04/2003, Volume 67, Issue 15, pp. 1552011 - 15520116
We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number... 
(GA,MN)AS | ROOM-TEMPERATURE | PHYSICS, CONDENSED MATTER | METAL-INSULATOR-TRANSITION | III-V SEMICONDUCTORS | FERROMAGNETIC SEMICONDUCTORS | GA1-XMNXAS | MODEL | DYNAMICAL MEAN-FIELD | MEDIATED FERROMAGNETISM | KONDO LATTICE | Physics - Materials Science
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2009, Volume 94, Issue 21, pp. 212109 - 212109-3
Using an all-electron band structure approach, we have systematically calculated the natural band offsets between all group IV, III-V, and II-VI semiconductor... 
IV-VI semiconductors | ENERGY | PHYSICS, APPLIED | ab initio calculations | II-VI semiconductors | D-ORBITALS | CONDUCTION | band structure | zinc compounds | RULE | cadmium compounds | III-V semiconductors | FORECASTING | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | MATERIALS SCIENCE | PHYSICS | DEFORMATION | MATERIALS | Materials Science and Semiconductors
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 01/2007, Volume 15, Issue 1, pp. 51 - 68
III‐V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser... 
III‐V semiconductors | solar cells | GaAs | InGaP | photovoltaic | Solar cells | Photovoltaic | III-V semiconductors | PHYSICS, APPLIED | SOLAR-CELLS | INGAP/GAAS | ENERGY & FUELS | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | LIGHT-EMITTING-DIODES | EPITAXIAL LIFT-OFF | GROWTH | INTERFACES | TUNNEL-JUNCTION | EFFICIENCY
Journal Article
2013, 1. Aufl., ISBN 3527411011, 476
This book gives a clear presentation of the necessary basics of semiconductor and device physics and engineering. It introduces readers to fundamental issues... 
Semiconductor Physics | Semiconductors | Materials | Nitrides | Wide gap semiconductors
eBook
Applied Physics Letters, ISSN 0003-6951, 03/2009, Volume 94, Issue 10, pp. 102504 - 102504-3
Based on first-principles calculations, we have investigated the magnetic properties of non-transition-metal doped semiconductors Al ( N , X ) and Zn ( O , X )... 
semimagnetic semiconductors | PHYSICS, APPLIED | energy gap | TOTAL-ENERGY CALCULATIONS | MODEL | magnetic moments | Curie temperature | semiconductor doping | ab initio calculations | aluminium compounds | II-VI semiconductors | FERROMAGNETISM | zinc compounds | wide band gap semiconductors | III-V semiconductors | Physics | Fysik | Physical Sciences | Naturvetenskap | Natural Sciences
Journal Article
NANO LETTERS, ISSN 1530-6984, 06/2019, Volume 19, Issue 6, pp. 3892 - 3897
Journal Article
Nano Letters, ISSN 1530-6984, 07/2012, Volume 12, Issue 7, pp. 3592 - 3595
One of the major challenges in further advancement of III–V electronics is to integrate high mobility complementary transistors on the same substrate. The... 
two-dimensional semiconductors | III-V CMOS | InAs | InGaSb | logic gate | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | Epitaxial layers | Semiconductors | Silicon substrates | Electronics | N-type semiconductors | Nanostructure | Logic | Devices | MOSFETs
Journal Article