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Journal Article
03/2016, ISBN 1119155495, 54
Heterojunction field effect transistors (HFETs) are FETs for which the channel is formed in the vicinity of hetero‐interface(s) of two (or three)... 
heterojunction field effect transistors | quantum phenomena | nonpolar modulation‐doped HFETs | polarization doping | energy subbands | heteroepitaxy | heterostructure quantum wells | Wurtzite III‐Nitride heterostructure
Book Chapter
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2016, Volume 10224
Conference Proceeding
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