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Journal of Applied Physics, ISSN 0021-8979, 07/2019, Volume 126, Issue 3, p. 33101
To develop extended InGaAs photodiode focal plane arrays with large scale and small pixels, a surface passivation film with low stress is necessary. To study... 
PHYSICS, APPLIED | LAYER | DEPOSITION | INGAAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2019, Volume 114, Issue 16, p. 161104
We present a metallic mirror-based resonant cavity-enhanced InAlAs/InGaAs metal-semiconductor-metal (InAlAs/InGaAs-MSM) photodetector driven by a 1550 nm... 
PHYSICS, APPLIED | INGAAS | Engineering Sciences
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 05/2013, Volume 102, Issue 21, p. 213504
The impact of dopant concentration on the current densities of In0.53Ga0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes is investigated. Increased doping... 
PHYSICS, APPLIED | GAASSB/INGAAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2015, Volume 107, Issue 18, p. 183509
In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In0.53Ga0.47As for... 
GAAS | PHYSICS, APPLIED | INGAAS
Journal Article
Nanotechnology, ISSN 0957-4484, 08/2017, Volume 28, Issue 38, p. 385202
Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier... 
InGaAs nanowire | heterojunction | nanorectifier diode
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2015, Volume 36, Issue 5, pp. 451 - 453
In this letter, we have investigated electrical properties of metal-oxide-semiconductor (MOS) gate stack of Pt/Y 2 O 3 /In 0.53 Ga 0.47 As under different... 
InGaAs | Wafer bonding | MOSFET | Annealing | III-V compound semiconductor | Logic gates | InGaAs-OI | III-V MOSFETs | Silicon | Hysteresis | Substrates | MOSFETs | wafer bonding | InGaAs MOSFETs | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2011, Volume 99, Issue 11, pp. 112113 - 112113-3
III-V-on-nothing (III-VON) metal-oxide-semiconductor field-effect transistors (MOSFETs) are experimentally demonstrated with In 0.53 Ga 0.47 As as channel and... 
CHANNEL | INGAAS MOSFET | PHYSICS, APPLIED
Journal Article
OPTICS LETTERS, ISSN 0146-9592, 07/2005, Volume 30, Issue 13, pp. 1725 - 1727
Conventional single-photon detectors at communication wavelengths suffer from low quantum efficiencies and large dark counts. We present a single-photon... 
LITHIUM-NIOBATE | INGAAS/INP AVALANCHE PHOTODIODES | OPTICS
Journal Article
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, ISSN 0740-3224, 12/2019, Volume 36, Issue 12, pp. 3428 - 3433
The global modeling of an unbiased/biased ungated high electron mobility transistor (HEMT) is presented. The complete hydrodynamic model is employed for the... 
OPTICS | SIMULATION | TRANSPORT PROPERTIES | SEMICONDUCTORS | INGAAS
Journal Article
by Chen, X.Y and Gu, Y and Zhang, Y.G and Ma, Y.J and Du, B and Zhang, J and Ji, W.Y and Shi, Y.H and Zhu, Y
Journal of Crystal Growth, ISSN 0022-0248, 04/2018, Volume 488, pp. 51 - 56
•GSMBE grown In0.83Ga0.17As on GaAs was improved by using two-step buffer.•In0.83Ga0.17As was fully relaxed via the InAlAs buffer at two temperatures.•PL of... 
B1: InGaAs | A1: Metamorphic buffer | A3: Molecular beam epitaxy | B3: Photodetector | InGaAs | EPITAXY | PHYSICS, APPLIED | FILMS | PHOTODETECTORS | EXTENDED-WAVELENGTH INGAAS | MATERIALS SCIENCE, MULTIDISCIPLINARY | Molecular beam epitaxy | CRYSTALLOGRAPHY | Metamorphic buffer | Photodetector
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2010, Volume 31, Issue 6, pp. 564 - 566
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2012, Volume 100, Issue 17, pp. 172111 - 172111-4
We present evidence for the production of photocurrent due to two-photon excitation in an intermediate band solar cell structure. The structure consists of an... 
PHYSICS, APPLIED | QUANTUM-WELL LASERS | CHEMICAL-VAPOR-DEPOSITION | EFFICIENCY | INGAAS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2009, Volume 30, Issue 8, pp. 805 - 807
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2015, Volume 36, Issue 5, pp. 451 - 453
Journal Article
Optics Express, ISSN 1094-4087, 06/2014, Volume 22, Issue 13, pp. 16363 - 16376
Self rolled-up microtube is a natural device that may couple light vertically out of a planar photonic device. It is instructive to understand the optical... 
MICROCAVITIES | OPTICS | POLARIZATION | INGAAS/GAAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2012, Volume 101, Issue 14, p. 143106
GaAs quantum dots (QDs) of ultra-low density (ULD) are fabricated by filling of nanoholes in AlGaAs surfaces. The holes are drilled using self-assembled local... 
PHYSICS, APPLIED | SPECTROSCOPY | GROWTH | INGAAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2004, Volume 84, Issue 11, pp. 1943 - 1945
We studied the uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor quantum dots (QDs) grown by organometallic chemical vapor deposition on... 
INAS | PHYSICS, APPLIED | INGAAS
Journal Article
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