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Optics Express, ISSN 1094-4087, 04/2015, Volume 23, Issue 7, pp. A371 - A381
A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at... 
MECHANISMS | OPTICS | EMISSION | INGAN
Journal Article
IEEE Journal on Selected Topics in Quantum Electronics, ISSN 1077-260X, 2009, Volume 15, Issue 4, pp. 1104 - 1114
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 09/2010, Volume 43, Issue 35, p. 354002
We fabricated three types of high luminous efficacy white light emitting diodes (LEDs). The first was a white LED with a high luminous efficacy (eta(L)) of 249... 
SAPPHIRE | ALPHA-SIALON | PHYSICS, APPLIED | PHOSPHOR | BLUE | INGAN | WELL | ULTRAVIOLET | LEDS | EFFICIENCY
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2007, Volume 91, Issue 1, pp. 013504 - 013504-3
The authors propose a simple, low cost, and mass producible imprint lithography method to texture indium tin oxide (ITO) contact layer of nitride-based light... 
PHYSICS, APPLIED | INGAN-GAN | LEDS
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2017, Volume 76-77, pp. 561 - 565
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2018, Volume 112, Issue 2, p. 22104
Electrical properties of N-polar undoped and Mg-doped InN layers and In-polar undoped InN layers grown by plasma-assisted molecular beam epitaxy (PA MBE) were... 
PHYSICS, APPLIED | INGAN | MOLECULAR-BEAM EPITAXY
Journal Article
Optical Materials, ISSN 0925-3467, 11/2018, Volume 85, pp. 337 - 340
The near-infrared spectral region is being used for various fields of applications. Near infrared emitters based on InGaN-ZnSnN2 material systems have not been... 
InGaN-ZnSnN2 QWs | Type-II QWs | Near-infrared light emitting diodes | InGaN-ZnSnN | QWs | ZNSNN2 | INGAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | INN | LEDS | OPTICS | EMISSION | ELECTROLUMINESCENCE
Journal Article
Applied Physics Express, ISSN 1882-0778, 2/2012, Volume 5, Issue 2, pp. 022104 - 022104-3
Room-temperature continuous wave lasing at 432 nm with a threshold current of 7.6 kA/cm 2 for nitride-based laser diodes (LDs) grown by plasma-assisted... 
PHYSICS, APPLIED | INGAN LASER
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 07/2012, Volume 102, pp. 208 - 211
Electro-optic characteristics of a fabricated n-In Ga N/p-Si hetero-structure solar cell on Si substrate with Al and ITO (or Ti/Al/Ni/Au) materials for p and... 
Solar cell | InGaN | ITO | MOCVD
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2013, Volume 364, pp. 123 - 127
The composition, strain and surface morphology of (0001)InGaN layers are investigated as a function of growth temperature (460–645°C) and impinging In flux.... 
A1. Strain | B1. InGaN | A1. Composition | A3. Molecular beam | A1. Surface morphology | A1. Growth diagram | Composition | PHYSICS, APPLIED | Growth diagram | Surface morphology | MATERIALS SCIENCE, MULTIDISCIPLINARY | InGaN | CRYSTALLOGRAPHY | Molecular beam | NITRIDES | INGAN LASER-DIODES | Strain | Epitaxy | Alloys
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2011, Volume 98, Issue 15, pp. 151115 - 151115-3
Double-metallic Au/Ag layers deposited on top of InGaN/GaN quantum wells (QWs) are used to tune the Purcell peak enhancement of the radiative recombination... 
EFFICIENCY ENHANCEMENT | PHYSICS, APPLIED | INGAN QUANTUM-WELLS | PHOTOLUMINESCENCE | LASERS | OPERATION
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2013, Volume 8625
Conference Proceeding
Optics Express, ISSN 1094-4087, 03/2018, Volume 26, Issue 5, pp. 5111 - 5117
We demonstrated the growth of crack-free high-quality GaN-based UV vertical LEDs (VLEDs) (lambda = 365 nm) on 6-inch sapphire substrates by using an ex-situ... 
HIGH-PERFORMANCE | OUTPUT POWER | DISLOCATIONS | INGAN | GROWTH | BUFFER LAYERS | OPTICS
Journal Article
Journal Article
by Jiao, QQ and Chen, ZZ and Ma, J and Wang, SY and Li, Y and Jiang, S and Feng, YL and Li, JZ and Chen, YF and Yu, TJ and Wang, SF and Zhang, GY and Tian, PF and Xie, EY and Gong, Z and Gu, ED and Dawson, MD
OPTICS EXPRESS, ISSN 1094-4087, 06/2015, Volume 23, Issue 13, pp. 16565 - 16574
Different size InGaN/GaN based micro-LEDs (mu LEDs) are fabricated. An extremely high injection level above 16 kA/cm(2) is achieved for 10 mu m-diameter LED.... 
STATES | OPTICS | INGAN | EFFICIENCY DROOP | ARRAYS
Journal Article
ISSN 1530-6984, 2017
We conducted a comprehensive investigation of dislocations in Al$_{0.46}$Ga$_{0.54}$N. Using aberration-corrected scanning transmission electron microscopy and... 
cathodoluminescence | dislocation | aberration-corrected TEM | InGaN | AlGaN
Journal Article
Optics Letters, ISSN 0146-9592, 01/2012, Volume 37, Issue 1, pp. 79 - 81
Diffractive arrays of silver nanocylinders are used to increase the radiative efficiency of InGaN/ GaN quantum wells emitting at near-green wavelengths. Large... 
EMITTING-DIODES | INGAN QUANTUM-WELLS | OPTICS
Journal Article
Journal of Semiconductors, ISSN 1674-4926, 11/2016, Volume 37, Issue 11, p. 111001
Journal Article
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