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Applied Surface Science, ISSN 0169-4332, 09/2014, Volume 312, pp. 157 - 161
We investigate the impact of interface traps and bulk traps on the performance of n GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs) using... 
Traps | Simulation | HEMT | GaN | Modeling | Interface | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CHEMISTRY, PHYSICAL | PROPOSAL | MATERIALS SCIENCE, COATINGS & FILMS | Computer simulation | Semiconductor devices | Barrier layers | Gallium nitrides | High electron mobility transistors | Devices | Aluminum nitride
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2013, Volume 60, Issue 2, pp. 776 - 781
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2009, Volume 105, Issue 12, p. 124506
Nitridation of the SiO2/SiC interface yields a reduction in interface state density, immunity to electron injection, as well as increased hole trapping. It is... 
NITRIDATION | DEFECTS | PHYSICS, APPLIED | MOS DEVICES | OXIDE | 4H-SIC/SIO2 INTERFACE | BIAS TEMPERATURE INSTABILITY | RELIABILITY | GENERATION | NBTI | MOSFETS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2010, Volume 96, Issue 20, p. 203508
Effective removal of near-interface traps (NITs) in SiO2/4H-SiC (0001) structures through phosphorus incorporation is demonstrated in this paper.... 
PHYSICS, APPLIED | OXIDE | electron mobility | MOBILITY | dielectric relaxation | oxidation | annealing | MOSFETS | 4H-SIC/SIO2 INTERFACE | silicon compounds | interface states | semiconductor-insulator boundaries | electron traps | electron density | wide band gap semiconductors
Journal Article
Journal of Applied Polymer Science, ISSN 0021-8995, 02/2020, Volume 137, Issue 8, p. n/a
ABSTRACT This study presents voltage‐dependent profile of interface traps in Au/n‐Si structure with 2% graphene–cobalt‐doped Ca3Co4Ga0.001Ox interfacial layer.... 
density of interface traps | parallel conductance | depletion capacitance | graphene | ADMITTANCE CHARACTERISTICS | POLYMER SCIENCE | ELECTRICAL-PROPERTIES | FREQUENCY | VOLTAGE-DEPENDENCE | DIODES | Resistance | Gold | Electric potential | Depletion | Graphene | Voltage | Capacitance | Cobalt | Electrical impedance
Journal Article
Applied Physics A, ISSN 0947-8396, 2/2018, Volume 124, Issue 2, pp. 1 - 9
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2019, Volume 66, Issue 11, pp. 4653 - 4659
In this article, an analytical predictive model of interface charge traps in symmetric, long-channel double-gate, junctionless transistors (JLTs) is proposed... 
Electric potential | MOSFET | charge-based model | Computational modeling | Aging effects | biosensors | Electron traps | double-gate junctionless field-effect transistor (DG JLFET) | Logic gates | temperature | Energy states | interface traps | ionizing radiation | PHYSICS, APPLIED | DOUBLE-GATE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 01/2010, Volume 96, Issue 1, p. 12906
Charge-trapping defects in Pt/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and their passivation by hydrogen are investigated in samples with... 
gallium arsenide | PHYSICS, APPLIED | atomic layer deposition | capacitance | energy gap | tunnelling | indium compounds | passivation | FIELD-EFFECT TRANSISTORS | platinum | aluminium compounds | INTERFACE | AL2O3 | MIS capacitors
Journal Article
Biogeosciences, ISSN 1726-4170, 2005, Volume 2, Issue 2, pp. 189 - 204
Sinking particles, once caught in sediment trap jars, release dissolved elements into the surrounding medium through leaching from their pore fluids, chemical... 
GREENLAND SEA | ATLANTIC-OCEAN | GEOSCIENCES, MULTIDISCIPLINARY | DISSOLVED ORGANIC-CARBON | SOUTHERN-OCEAN | DEEP-OCEAN | VERTICAL FLUX | TIME-SERIES | ECOLOGY | WATER COLUMN | REDFIELD RATIOS | MARINE SNOW | Earth Sciences | Astrophysics | Continental interfaces, environment | Sciences of the Universe | Ocean, Atmosphere | Cosmology and Extra-Galactic Astrophysics | Physics
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 03/2018, Volume 51, Issue 14, p. 145306
Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a... 
nanocrystal | surface traps | functional interface | transistor | QUANTUM-DOT PHOTOVOLTAICS | PHYSICS, APPLIED | SOLAR-CELLS | SEMICONDUCTOR NANOCRYSTALS | FIELD-EFFECT TRANSISTORS | LAYERS | LIGHT-EMITTING-DIODES | SUBTHRESHOLD SLOPE | TRANSPORT | PENTACENE | MONOLAYER
Journal Article