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IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2017, Volume 64, Issue 4, pp. 1412 - 1417
Al electrode on Al 2 O 3 /GeO x /Ge dielectrics stack has smaller interface trap density than Pt electrode due to the AlGeO formation at the interface. The... 
Electrodes | Temperature measurement | AlGeO | Electron traps | Annealing | Logic gates | Dielectrics | Aluminum oxide | interface trap density | Interface trap density | Ge | GEO2 | OXIDATION | PMOSFETS | PHYSICS, APPLIED | FILMS | PASSIVATION | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Surface Science, ISSN 0169-4332, 2014, Volume 299, pp. 47 - 51
Dielectric stack composed of orthorhombic ZrTiO and amorphous Yb O interfacial layer was employed as the gate dielectric for Si n-MOSFET. The gate stack with... 
Interface trap density | Fixed oxide charge | BTI | Mobility | EOT | Reliability
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2013, Volume 102, Issue 13, p. 132904
The application of microwave-generated atomic oxygen as an oxidant is found to change the manner of atomic layer deposition (ALD) of an Al2O3 layer on a Ge... 
INTERFACE-TRAP DENSITY | PHYSICS, APPLIED | GATE DIELECTRICS | SURFACES
Journal Article
Applied Surface Science, ISSN 0169-4332, 04/2014, Volume 299, pp. 47 - 51
Dielectric stack composed of orthorhombic ZrTiO and amorphous Yb O interfacial layer was employed as the gate dielectric for Si n-MOSFET. The gate stack with... 
Interface trap density | Fixed oxide charge | BTI | Orthorhombic ZrTiO4 | Mobility | EOT | Reliability | Yb2O3 | HFO2 | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CHEMISTRY, PHYSICAL | PHASE | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 06/2013, Volume 60, Issue 3, pp. 1706 - 1730
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 07/2019, Volume 66, Issue 7, pp. 1612 - 1619
Journal Article
Wuli Xuebao/Acta Physica Sinica, ISSN 1000-3290, 08/2018, Volume 67, Issue 16
Bipolar junction transistors (BJTs) are generally employed in spacecraft, due to their current drive capability, linearity and excellent matching... 
Radiation mechanisms | Bipolar transistors | Ionizing irradiation | Passivation | ENERGY | PHYSICS, MULTIDISCIPLINARY | passivation | radiation mechanisms | ionizing irradiation | CIRCUITS | HYDROGEN | bipolar transistors | INTERFACE-TRAP FORMATION | SEPARATION | JUNCTION TRANSISTORS | CHARGE | DOSE-RATE SENSITIVITY
Journal Article
Applied Radiation and Isotopes, ISSN 0969-8043, 10/2019, Volume 152, pp. 72 - 77
Journal Article
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