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JOURNAL OF LUMINESCENCE, ISSN 0022-2313, 07/2011, Volume 131, Issue 7, pp. 1502 - 1509
The intersubband electron-related nonlinear optical absorption and nonlinear optical rectification in GaAs-Ga(1-x)AL(x)As asymmetric double quantum wells are... 
SYSTEM | Nonlinear optical absorption | SUSCEPTIBILITY | INTERSUBBAND ABSORPTION | DOTS | Nonlinear optical rectification | Electric field | Double quantum well | Hydrostatic pressure | ENHANCEMENT | GENERATION | OPTICS | Magnetic field
Journal Article
Optics Communications, ISSN 0030-4018, 2010, Volume 283, Issue 9, pp. 1795 - 1800
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 04/2016, Volume 92, pp. 166 - 173
Journal Article
Journal of Luminescence, ISSN 0022-2313, 10/2012, Volume 132, Issue 10, pp. 2659 - 2664
Journal Article
Physica E: Low-dimensional Systems and Nanostructures, ISSN 1386-9477, 07/2019, Volume 111, pp. 134 - 140
We theoretically investigate the optical absorption and the relative change in the index of refraction in asymmetric double zinc-blende Al Ga N/GaN quantum... 
Zinc-blende asymmetric QW | Relative refractive index change | Absorption coefficient | LUMINESCENCE EMISSION | PHYSICS, CONDENSED MATTER | FIELD | INTERSUBBAND RAMAN LASER | OPTICAL-ABSORPTION | NANOSCIENCE & NANOTECHNOLOGY | MODEL
Journal Article
physica status solidi (b), ISSN 0370-1972, 08/2017, Volume 254, Issue 8, pp. 1600734 - n/a
GaN/AlN is a promising material system for the development of an ultrafast intersubband technology operating at telecommunication wavelengths, thanks to the... 
doping | AlN | heterostructures | intersubband absorption | GaN | nanowires | PHYSICS, CONDENSED MATTER | GERMANIUM | GROWTH | 1.55 MU-M | TRANSITIONS | Condensed Matter | Materials Science | Physics
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 07/2017, Volume 50, Issue 30, p. 305501
A semiconductor structure consisting of two coupled quantum wells embedded into the intrinsic region of a p-i-n junction is proposed as an intermediate band... 
intersubband transitions | cell current | intermediate band solar cells | quantum well | multiphoton processes | PHYSICS, APPLIED | PHOTOCURRENT GENERATION | EFFICIENCY
Journal Article
Nanotechnology, ISSN 0957-4484, 02/2019, Volume 30, Issue 5, p. 054002
We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well... 
near infrared | AlN | intersubband absorption | nanorods | GaN | mid-infrared | top-down | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | RELAXATION | NANOSCIENCE & NANOTECHNOLOGY | Condensed Matter | Materials Science | Physics
Journal Article
Optical Materials, ISSN 0925-3467, 08/2015, Volume 46, pp. 361 - 365
Linear and nonlinear optical absorption coefficients of spherical dome shells are theoretically investigated within analytical wave functions and numerical... 
Spherical dome shells | Optical absorption | RECTIFICATION | INTERSUBBAND TRANSITIONS | WIRES | ELECTRIC-FIELD | MATERIALS SCIENCE, MULTIDISCIPLINARY | IMPURITY | MAGNETIC-FIELD | DOT QUANTUM-WELL | INTENSE | OPTICS
Journal Article
Nanotechnology, ISSN 0957-4484, 09/2017, Volume 28, Issue 40, p. 405204
In this paper, we study band-to-band and intersubband (ISB) characteristics of Si- and Ge-doped GaN/AlN heterostructures (planar and nanowires) structurally... 
Ge-doping | GaN nanowire | intersubband | Si-doping | PHYSICS, APPLIED | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | MU-M | TRANSITION | SHOCKLEY-QUEISSER LIMIT | GERMANIUM | GAN NANOWIRES | Physics - Materials Science | Condensed Matter | Physics
Journal Article
Optics Communications, ISSN 0030-4018, 05/2013, Volume 294, pp. 361 - 367
In the effective mass approximation, we have theoretically investigated the subband structure of single Si δ-doped GaAs by solving the Schrödinger and Poisson... 
Refractive index change | Linear and nonlinear intersubband transition | Absorption coefficient | Delta-doped | Self-consistently | Doping concentration and doping thickness | QUANTUM-WELL | FIELD-EFFECT TRANSISTOR | HOLE CONFINEMENT | HYDROSTATIC-PRESSURE | SUBBAND | MODEL | APPLIED ELECTRIC-FIELD | FET | TRANSITIONS | OPTICS | LAYER
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 04/2017, Volume 510, pp. 86 - 91
Journal Article
Nanotechnology, ISSN 0957-4484, 07/2018, Volume 29, Issue 38, p. 385201
In this paper, we study intersubband characteristics of GaN/AlN and GaN/Al0.4Ga0.6N heterostructures in GaN nanowires structurally designed to absorb in the... 
infrared | intersubband | GaN | nanowire | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | Condensed Matter | Materials Science | Physics
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 11/2011, Volume 84, Issue 20
The relation between free-carrier absorption and intersubband transitions in semiconductor heterostructures is resolved by comparing a sequence of structures.... 
INTERSUBBAND TRANSITIONS | PHYSICS, CONDENSED MATTER | TRANSPORT | SUPERLATTICES | STRENGTH | BAND | QUANTUM-CASCADE LASERS | OSCILLATOR | ROUGHNESS | GAIN | SCATTERING | Physics - Mesoscale and Nanoscale Physics | Condensed Matter Physics | Fysik | Den kondenserade materiens fysik | Physical Sciences | Naturvetenskap | Natural Sciences
Journal Article
Journal of Luminescence, ISSN 0022-2313, 2011, Volume 131, Issue 6, pp. 1113 - 1120
The subband structure and optical properties of a cylindrical quantum well wire under intense non-resonant laser field are investigated by taking into account... 
Laser field | Absorption coefficient | Intersubband transition | Quantum well wire | INTERSUBBAND ABSORPTION | DOTS | APPLIED ELECTRIC-FIELD | FINITE | SUPERLATTICES | WAVE-GUIDES | COEFFICIENTS | REFRACTIVE-INDEX CHANGES | TRANSITIONS | OPTICS | Finite element method | Anisotropy | Optical properties | Quantum wells | Polarization | Lasers | Mathematical analysis | Wave functions | Devices | Wire
Journal Article
Nano Letters, ISSN 1530-6984, 03/2014, Volume 14, Issue 3, pp. 1665 - 1673
Journal Article
ACS Nano, ISSN 1936-0851, 08/2018, Volume 12, Issue 8, pp. 7682 - 7689
The Si-compatibility of perovskite heterostructures offers the intriguing possibility of producing oxide-based quantum well (QW) optoelectronic devices for use... 
intersubband transitions | oxideâoxide interface | transition metal oxides | heterostructure | quantum wells | thin films
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2005, Volume 87, Issue 10, pp. 101912 - 101912-3
We report the Stranski-Krastanov growth of Si-doped GaN ∕ AlN quantum dot superlattices displaying conduction-band interlevel absorption at telecommunication... 
PHYSICS, APPLIED | SPECTROSCOPY | GAN | MOLECULAR-BEAM EPITAXY | INTERSUBBAND ABSORPTION | MU-M | WELLS | RANGE
Journal Article
The European Physical Journal B, ISSN 1434-6028, 5/2017, Volume 90, Issue 5, pp. 1 - 11
Journal Article
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