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Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 05/2007, Volume 75, Issue 20
The dynamical dielectric function of two-dimensional graphene at arbitrary wave vector q and frequency omega, epsilon(q,omega), is calculated in the... 
PHYSICS, CONDENSED MATTER | SILICON INVERSION-LAYERS | ELECTRON-GAS
Journal Article
Physical Review Letters, ISSN 0031-9007, 1993, Volume 71, Issue 15, pp. 2465 - 2468
We demonstrate that electrons in a ballistic field effect transistor behave as a fluid similar to shallow water. Phenomena similar to wave and soliton... 
TRANSPORT | PHYSICS | INVERSION-LAYERS
Journal Article
Physical Review Letters, ISSN 0031-9007, 03/2010, Volume 104, Issue 12, pp. 126803 - 126803
The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has... 
MAGNETORESISTANCE | SYSTEM | PHYSICS, MULTIDISCIPLINARY | HETEROSTRUCTURES | CONDUCTION ELECTRONS | CARRIERS | INVERSION-LAYERS | Condensed Matter | Physics
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 02/2007, Volume 90, Issue 9
Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2 degrees miscut substrates is computed in a magnetic field. Calculations of... 
PHYSICS, APPLIED | MINIGAPS | DOTS | INVERSION-LAYERS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2002, Volume 80, Issue 18, pp. 3433 - 3435
The resonant detection of subterahertz radiation by two-dimensional electron plasma confined in a submicron gate GaAs/AlGaAs field-effect transistor is... 
2-DIMENSIONAL ELECTRONIC FLUID | PHYSICS, APPLIED | INVERSION-LAYERS
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 2006, Volume 73, Issue 23
We propose a novel scheme to efficiently polarize and manipulate the electron spin in a quantum dot. This scheme is based on the spin-orbit interaction and it... 
PHYSICS, CONDENSED MATTER | METAL | RESONANCE | SPINTRONICS | SEMICONDUCTORS | INVERSION-LAYERS
Journal Article
Reviews of Modern Physics, ISSN 0034-6861, 05/2011, Volume 83, Issue 2, pp. 407 - 470
A broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature-dependent carrier transport in... 
METAL-INSULATOR-TRANSITION | PHYSICS, MULTIDISCIPLINARY | CHARGED-IMPURITY-SCATTERING | SILICON INVERSION-LAYERS | WALL CARBON NANOTUBES | MASSLESS DIRAC FERMIONS | SUSPENDED GRAPHENE | BILAYER GRAPHENE | POLAR PHONON-SCATTERING | P-N-JUNCTIONS | 2 DIMENSIONS | Usage | Graphene | Analysis | Quantum wells | Dirac equation | Electron transport | Structure | Electric properties
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 04/2010, Volume 81, Issue 15
We investigate the crossover between weak localization and weak antilocalization in InAs nanowires of different diameters (75 nm-140 nm-217 nm). For a magnetic... 
PHYSICS, CONDENSED MATTER | WIRES | MAGNETIC-FIELD | GROWTH | INVERSION-LAYERS
Journal Article
PHYSICAL REVIEW LETTERS, ISSN 0031-9007, 11/2007, Volume 99, Issue 22
We calculate partial derivative mu/partial derivative n (where mu=chemical potential and n=electron density), which is associated with the compressibility, in... 
2-DIMENSIONAL ELECTRON | ENERGY | PHYSICS, MULTIDISCIPLINARY | INVERSION LAYERS
Journal Article
Physical Review Letters, ISSN 0031-9007, 2006, Volume 97, Issue 22, pp. 226801 - 226801
We show that Friedel oscillations (FO) in grapehene are strongly affected by the chirality of electrons in this material. In particular, the FO of the charge... 
GAS | PHYSICS, MULTIDISCIPLINARY | BERRYS PHASE | SILICON INVERSION-LAYERS | Physics - Mesoscale and Nanoscale Physics
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 11/2012, Volume 86, Issue 19
We measured the Dresselhaus spin-orbit interaction coefficient beta(1) for (001)-grown GaAs/Al0.3Ga0.7As quantum wells for six different well widths omega... 
PHYSICS, CONDENSED MATTER | ANTILOCALIZATION | ELECTRONS | RELAXATION | HELIX | PRECESSION | SCATTERING | INVERSION-LAYERS
Journal Article
Journal of Physics: Condensed Matter, ISSN 0953-8984, 08/2009, Volume 21, Issue 34, pp. 344201 - 344201 (5)
We study the transport of carriers in intrinsic graphene by means of an ensemble Monte Carlo technique. Scattering by acoustic and optical phonons dominates... 
PHYSICS, CONDENSED MATTER | TRANSISTORS | HIGH-FIELD TRANSPORT | SEMICONDUCTORS | PERFORMANCE | POLAR PHONON-SCATTERING | INVERSION-LAYERS
Journal Article
Physical Review Letters, ISSN 0031-9007, 07/2002, Volume 89, Issue 4, pp. 046801/4 - 046801
We have investigated the values of the Rashba spin-orbit coupling constant alpha in In-0.52 Al-0.48 As/In Ga-0.53 As-0.47/In Al-0.52 As-0.48 quantum wells... 
LOCALIZATION ANALYSIS | SEMICONDUCTOR | HETEROJUNCTIONS | PHYSICS, MULTIDISCIPLINARY | ELECTRONS | HETEROSTRUCTURES | DEVICE | PRECESSION | SPLITTING ENERGIES | SCATTERING | INVERSION-LAYERS
Journal Article
Physical Review X, ISSN 2160-3308, 2014, Volume 4, Issue 1, p. 011043
The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the... 
Semiconductor physics | Condensed matter physics | SI INVERSION-LAYERS | TRANSITION | TRANSISTORS | PHYSICS, MULTIDISCIPLINARY | INSULATOR | MOS2 | POLARIZABILITY | 2-DIMENSIONAL ELECTRON-GAS | GRAPHENE | CARRIERS | POLAR PHONON-SCATTERING | Physics - Mesoscale and Nanoscale Physics
Journal Article
Journal of Physics: Condensed Matter, ISSN 0953-8984, 06/2009, Volume 21, Issue 23, pp. 232204 - 232204 (4)
Recent studies have shown that a high K dielectric solvent screens the impurities for room temperature transport in graphene and the mobility has been found to... 
SI INVERSION-LAYERS | PHYSICS, CONDENSED MATTER | TRANSPORT | ELECTRON-MOBILITY | CHARGED-IMPURITY SCATTERING | POLAR PHONON-SCATTERING
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2005, Volume 97, Issue 1, p. 11101
This article reviews the history and current progress in high-mobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field-effect transistors... 
P-TYPE | RELAXED SI1-XGEX | PHYSICS, APPLIED | SILICON INVERSION-LAYERS | MODULATION-DOPED SI/SIGE | MOLECULAR-BEAM EPITAXY | HIGH-ELECTRON-MOBILITY | HIGH HOLE MOBILITY | THREADING DISLOCATION DENSITIES | ON-INSULATOR LAYERS | N-MOSFETS | Silicon compounds | Germanium | Metal oxide semiconductors | Analysis | Electric properties
Journal Article