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inxga1-xn (97) 97
physics, applied (69) 69
physics, condensed matter (59) 59
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inn (40) 40
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layers (21) 21
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galliumverbindung (20) 20
epitaxy (19) 19
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nitrides (18) 18
fundamental-band gap (17) 17
indiumgalliumnitrid (17) 17
energy (16) 16
engineering, electrical & electronic (16) 16
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galliumnitrid (14) 14
indium gallium nitrides (14) 14
vapor-phase epitaxy (14) 14
halbleiter mit grosser energielücke (13) 13
optical properties (13) 13
energielücke (12) 12
gallium nitrides (12) 12
halbleiterepitaxialschicht (12) 12
indiumnitrid (12) 12
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physics (11) 11
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materials science (10) 10
metallorganische gasphasenabscheidung (10) 10
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research (10) 10
aluminiumverbindung (9) 9
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phase separation (9) 9
spectroscopy (9) 9
thin films (9) 9
alxga1-xn (8) 8
hexagonal inn (8) 8
nitride (8) 8
chemistry, physical (7) 7
dependence (7) 7
electric properties (7) 7
gallium compounds (7) 7
in1-xgaxn alloys (7) 7
mocvd (7) 7
molekularstrahlepitaxie (7) 7
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optics (7) 7
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gallium nitride (6) 6
heteroübergang (6) 6
ingan alloys (6) 6
laser-diodes (6) 6
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usage (6) 6
78.55.cr (5) 5
[ phys.cond.cm-ms ] physics [physics]/condensed matter [cond-mat]/materials science [cond-mat.mtrl-sci] (5) 5
a3-b5-verbindung (5) 5
b1. nitrides (5) 5
band gap (5) 5
bowing parameter (5) 5
characterization and evaluation of materials (5) 5
constants (5) 5
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Applied Physics Letters, ISSN 0003-6951, 06/2002, Volume 80, Issue 25, pp. 4741 - 4743
High-quality wurtzite-structured In-rich In1-xGaxN films (0less than or equal toxless than or equal to0.5) have been grown on sapphire substrates by molecular... 
PHYSICS, APPLIED | STOKES SHIFT | ALN | OPERATION | LASER-DIODES | INGAN EPILAYERS | INN | NITRIDE | INXGA1-XN ALLOYS | DEPENDENCE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2010, Volume 96, Issue 2, pp. 021908 - 021908-3
We use density functional theory calculations with the HSE06 hybrid exchange-correlation functional to investigate InGaN alloys and accurately determine band... 
OFFSETS | gallium compounds | valence bands | PHYSICS, APPLIED | energy gap | indium compounds | INN | PARAMETERS | exchange interactions (electron) | density functional theory | GAP | INXGA1-XN ALLOYS | SURFACES
Journal Article
Solar Energy, ISSN 0038-092X, 09/2014, Volume 107, pp. 543 - 552
Wurtzite GaInN alloys with flexible energy gaps are pronounced for their potential applications in optoelectronics and solar cell technology. Recently the... 
III–V alloys | Solar cell application | Thermodynamic stability | Electronic structure | DFT | III-V alloys | BOWING PARAMETER | ENERGY & FUELS | SEMICONDUCTORS | STABILITY | FUNDAMENTAL-BAND GAP | OPTICAL-PROPERTIES | INN | INXGA1-XN | GROWTH | GALLIUM NITRIDE | ABSORPTION | Investigations | Alloys
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2011, Volume 98, Issue 15, pp. 151907 - 151907-3
We present parameter-free calculations of electronic properties of InGaN, InAlN, and AlGaN alloys. The calculations are based on a generalized quasichemical... 
ENERGY | PHYSICS, APPLIED | FILMS | CHEMICAL-VAPOR-DEPOSITION | GAN | MOLECULAR-BEAM EPITAXY | OPTICAL-PROPERTIES | INN | INXGA1-XN ALLOYS | III-NITRIDE ALLOYS | DEPENDENCE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2008, Volume 92, Issue 19, pp. 191907 - 191907-3
In x Al 1 − x N films were heteroepitaxially grown on Al N ∕ Al 2 O 3 (0001) templates by molecular beam epitaxy. The compositions studied spanned the whole... 
VAPOR-PHASE EPITAXY | PHYSICS, APPLIED | FILMS | INXAL1-XN | GAN | GROWTH | ALINN | INXGA1-XN | ALXGA1-XN | TERNARY | PARAMETERS
Journal Article
PHOTONICS, ISSN 2304-6732, 06/2019, Volume 6, Issue 2, p. 44
In this study, we investigated an innovative method for the fabrication of nanostructure bulk alloys and thin films of indium gallium nitride (InxGa1-xN) as... 
INGAN | GROWTH | OPTICAL-PROPERTIES | INN | InxGa1-xN | LED | OPTICS | nanostructures | MOCVD | BAND-GAP | ARRAYS | LAYERS | InxGa1−xN
Journal Article
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 05/2003, Volume 42, Issue 5 A, pp. 2549 - 2559
The fundamental band gap of InN has been thought to be about 1.9 eV for a long time. Recent developments of metalorganic vapor phase epitaxy (MOVPE) and... 
Characterization | Raman scattering | InGaN | InN | RF-MBE | Band gap | XRD | EXAFS | Optical absorption | VAPOR-PHASE EPITAXY | ENERGY | PHYSICS, APPLIED | INDIUM NITRIDE FILMS | FUNDAMENTAL-BAND GAP | OPTICAL-PROPERTIES | INXGA1-XN | optical absorption | BUFFER LAYER | MBE | TEMPERATURE | ABSORPTION | characterization | band gap
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 08/2015, Volume 36, pp. 192 - 203
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2010, Volume 312, Issue 5, pp. 641 - 644
BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy... 
B1. InGaN | A3. Metal-organic vapour phase epitaxy | B1. BInGaN | B1. Boron | Boron | InGaN | INN | INXGA1-XN | BInGaN | CRYSTALLOGRAPHY | MOVPE | Metal-organic vapour phase epitaxy | Quaternary alloys | Indium gallium nitrides | Gallium nitrides | Secondary ion mass spectroscopy | Epitaxy | Vapour | Indium | X-ray photoelectron spectroscopy | Optics | Physics
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 07/2010, Volume 503, Issue 2, pp. 529 - 537
The origins of the bandgap bowing character in the common-anion ternary cubic Ga In N alloys are investigated using the sp s tight-binding (TB) method,... 
Band structure | Photoluminescence | III-V semiconductors | OFFSETS | TIGHT-BINDING PARAMETRIZATION | II-VI | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | OPTICAL-PROPERTIES | CHEMISTRY, PHYSICAL | BAND-GAP | STOKES SHIFT | CHEMICAL TRENDS | INXGA1-XN ALLOYS | ELECTRONIC-STRUCTURE
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2012, Volume 112, Issue 3, p. 33106
We propose an approach that improves the measuring precision of lattice parameters in semiconductor alloys from high resolution transmission electron... 
LOCALIZATION | PHYSICS, APPLIED | HREM | INXGA1-XN | QUANTUM-WELLS | STRAIN | PROBE | Thermal properties | Technology application | Usage | Semiconductors | Mathematical statistics | Transmission electron microscopes | Optical properties | Analysis | Indium | Gallium compounds | Unit cell | Indium gallium nitrides | Fluctuation | Images | Aberration | Deviation | Electron microscopy
Journal Article
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, ISSN 1002-185X, 12/2015, Volume 44, Issue 12, pp. 3027 - 3031
First-principles calculations of plane wave ultra-soft pseudo-potential method based on the density functional theory (DFT) were used to study lattice... 
Properties | Alloys | First-principles | alloys | FILMS | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | InxGa1-xN | ALXGA1-XN | first-principles | properties | BAND-GAP
Journal Article
Physica E: Low-dimensional Systems and Nanostructures, ISSN 1386-9477, 2009, Volume 41, Issue 4, pp. 701 - 704
Numerical simulation based on FP-LAPW calculations is applied to study the optical properties of the cubic In Ga N alloy and we present the dielectric... 
Dielectric function | Absorption coefficient | Refractive index | Optical conductivity | PHYSICS, CONDENSED MATTER | CONSTANTS | GAN | SEMICONDUCTORS | INXGA1-XN | NANOSCIENCE & NANOTECHNOLOGY | Optical properties | Analysis | Alloys
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2011, Volume 318, Issue 1, pp. 441 - 445
Journal Article
Nanoscale Research Letters, ISSN 1931-7573, 12/2012, Volume 7, Issue 1, pp. 1 - 6
Journal Article
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