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1973, Defects in crystalline solids, Volume 8, 802
Book
1986, English ed., rev. and enl., ISBN 2881240712, viii, 462
Book
Applied Physics Letters, ISSN 0003-6951, 06/2008, Volume 92, Issue 26, pp. 263502 - 263502-3
The channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of... 
PHYSICS, APPLIED | ION-IMPLANTATION
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2020, Volume 116, Issue 1, p. 12101
The implantation of aluminum into 4H-SiC is studied using secondary ion mass spectrometry. In particular, two-dimensional concentration profiles are obtained,... 
DISTRIBUTIONS | PHYSICS, APPLIED | ION-IMPLANTATION
Journal Article
Journal of Luminescence, ISSN 0022-2313, 06/2019, Volume 210, pp. 413 - 424
Al Ga N (x = 0.20) layers grown on (0001) sapphire substrates by metal organic chemical vapour deposition were implanted with terbium (Tb) ions at 150 keV with... 
Ion implantation | Photoluminescence | Yellow luminescence
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 01/2006, Volume 88, Issue 2
Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV N-15(I=1/2) ions into type IIa diamond. Optically detected magnetic... 
PHYSICS, APPLIED | RESONANCE | ION-IMPLANTATION
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2015, Volume 117, Issue 4
Journal Article
1974, Tata Institute of Fundmental Research Lectures on Mathematics and Physics. Physics., Volume 49., ii, 267
Book
Journal of the Korean Physical Society, ISSN 0374-4884, 03/2018, Volume 72, Issue 5, pp. 604 - 609
Journal Article
APPLIED PHYSICS EXPRESS, ISSN 1882-0778, 11/2019, Volume 12, Issue 11, p. 111005
To investigate Mg diffusion during ultra-high-pressure annealing, which activates Mg acceptors in GaN, GaN samples with p-n junctions prepared via epitaxial... 
HYDROGEN | PHYSICS, APPLIED | ION-IMPLANTATION
Journal Article
Materials Science Forum, ISSN 0255-5476, 07/2019, Volume 963, pp. 375 - 381
The effect of lattice thermal vibrations on the channeling of 100 keV Al ions in 4H-SiC is investigated. By implanting at room temperature in the direction,... 
Ion implantation | Lattice vibration | Channeling
Journal Article
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