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by Ma, SS and Shu, TY and Zhu, JQ and Li, K and Wu, HZ
ACTA PHYSICA SINICA, ISSN 1000-3290, 08/2019, Volume 68, Issue 16
Semiconductor heterojunctions play a crucial role in exploring novel physics and developing advanced devices. Due to the characteristic electronic band... 
Dirac fermions | two-dimensional electron gas | PHYSICS, MULTIDISCIPLINARY | infrared detectors | MOBILITY | QUANTUM | IV-VI compound semiconductor heterojunctions
Journal Article
Crystal Research and Technology, ISSN 0232-1300, 01/2005, Volume 40, Issue 1‐2, pp. 7 - 20
The phenomenon of dislocation patterning during melt growth of III‐V, II‐VI and IV‐VI semiconductor crystals is discussed. The paper is focused on the... 
melt growth | IV‐VI | grain boundaries | III‐V | dislocation dynamics | II‐VI | cell structuring | Cell structuring | Grain boundaries | III-V | II-VI | Melt growth | Dislocation dynamics | IV-VI | STRESS DEPENDENCE | HIGH-TEMPERATURE | CRYSTALLOGRAPHY | LIQUID ENCAPSULATION | CDTE CRYSTALS | SCATTERING TOMOGRAPHY | BRIDGMAN TECHNIQUE | PBTE SINGLE-CRYSTALS | GAAS CRYSTALS | GALLIUM-ARSENIDE | IV-Vl | X-RAY TOPOGRAPHY
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2009, Volume 106, Issue 11, pp. 113707 - 113707-8
Journal Article
Thin Solid Films, ISSN 0040-6090, 09/2015, Volume 591, pp. 346 - 350
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2012, Volume 8549
Conference Proceeding
Surface and Interface Analysis, ISSN 0142-2421, 07/2016, Volume 48, Issue 7, pp. 547 - 551
Journal Article
Thermochimica Acta, ISSN 0040-6031, 03/2014, Volume 579, pp. 64 - 69
To clarify the behavior of thermally oxidized PbTe the phase equilibrium diagram was calculated taking into account the change of the standard Gibbs energies... 
X-ray diffraction | PbTe sintered material | Oxidation | IV–VI semiconductor compounds | Phase equilibrium diagram | Ternary PbTe Oxides | IV-VI semiconductor compounds | OXYGEN | CHEMISTRY, ANALYTICAL | CHEMISTRY, PHYSICAL | SIMS | Oxides | Oxidation-reduction reaction | Nanotechnology
Journal Article
AIP Conference Proceedings, ISSN 0094-243X, 2011, Volume 1399, Issue 1, pp. 315 - 316
The present status of our studies of thickness oscillations of the transport properties in IV-VI quantum wells is reviewed. The results of those studies... 
2D-structures | IV-VI semiconductor compounds | Quantum size effects | transport phenomena | Transport properties | Conferences | Semiconductors | Quantum wells | Quantization | Oscillations | Transport
Conference Proceeding
Applied Surface Science, ISSN 0169-4332, 2004, Volume 233, Issue 1, pp. 320 - 327
Journal Article
Electrochimica Acta, ISSN 0013-4686, 2004, Volume 49, Issue 8, pp. 1321 - 1326
PbSe is a IV-VI compound semiconductor with a narrow band gap (0.26eV), used in photodetectors, photoresistors and photoemitters in the infrared (IR). This... 
Thin films | Quantum confinement | PbSe | Compound semiconductor | EC-ALE | upd | Electrodeposition | XRD | IV–VI | Upd | IV-VI | ELECTROCHEMISTRY | CDTE | MONOLAYERS | thin films | GAAS DEPOSITION | SPECTROSCOPY | CADMIUM | quantum confinement | SCANNING-TUNNELING-MICROSCOPY | electrodeposition | compound semiconductor | UNDERPOTENTIAL DEPOSITION | LEAD | SURFACES
Journal Article
Applied Surface Science, ISSN 0169-4332, 2005, Volume 242, Issue 3, pp. 412 - 418
Journal Article
Surface and Interface Analysis, ISSN 0142-2421, 04/2006, Volume 38, Issue 4, pp. 518 - 521
Composition of oxide and oxide–semiconductor interface in binary chalcogenide solid solutions of PbTeSnTe and PbSn alloys was analyzed by method of... 
oxidation | Auger electron spectroscopy | thermodynamic properties | IV–VI semiconductor compounds | X‐ray diffraction | equilibrium phase diagrams | X-ray diffraction | Equilibrium phase diagrams | IV-VI semiconductor compounds | Oxidation | Thermodynamic properties | OXIDE | SURFACE | CHEMISTRY, PHYSICAL
Journal Article
Journal Article
Solid State Electronics, ISSN 0038-1101, 2002, Volume 46, Issue 1, pp. 49 - 52
In this study, we have performed current-voltage (I-V) measurements on single crystals p-SnS and p-SnSe at different temperatures in the vicinity of room... 
Schottky barriers | I– V characteristics | IV–VI layered semiconductor compounds | IV-VI layered semiconductor compounds | I-V characteristics | CONTACTS | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Surface and Interface Analysis, ISSN 0142-2421, 03/2008, Volume 40, Issue 3‐4, pp. 641 - 644
Journal Article
電子情報通信学会技術研究報告. CPM, 電子部品・材料, ISSN 0913-5685, 10/2014, Volume 114, pp. 29 - 32
... 
Journal Article
電子情報通信学会技術研究報告. CPM, 電子部品・材料, ISSN 0913-5685, 08/2014, Volume 114, pp. 17 - 20
... 
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2005, Volume 285, Issue 1-2, pp. 54 - 58
PbSe thin film and PbSe/PbSrSe multiple quantum well (MQW) structures were successfully grown on (1 1 0) BaF substrates by molecular beam epitaxy. The average... 
A3. Multiple quantum well | B2. Semiconductor IV-VI compounds | A3. MBE | MBE | PHYSICS, APPLIED | SURFACE-EMITTING LASERS | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALS | multiple quantum well | semiconductor IV-VI compounds | CRYSTALLOGRAPHY
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2005, Volume 5946, pp. 1 - 7
Conference Proceeding
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