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Journal of Materials Chemistry, ISSN 0959-9428, 03/2011, Volume 21, Issue 10, pp. 3335 - 3345
Recently, a lot of effort has been focused on improving the performance and exploring the electric properties of graphene. This article presents a summary of... 
LARGE-AREA | EPITAXIAL GRAPHENE | MATERIALS SCIENCE, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | NITROGEN-DOPED GRAPHENE | BILAYER GRAPHENE | CARBON NANOTUBES | SUSPENDED GRAPHENE | P-N-JUNCTIONS | CHARGED-IMPURITY SCATTERING | ELECTRONIC-STRUCTURE | Electronic properties | Electronic devices | Graphene | Doping | Performance enhancement | Summaries | Tuning
Journal Article
Science, ISSN 0036-8075, 03/2017, Volume 355, Issue 6329, pp. 1058 - 1062
Doping a semiconductor with foreign atoms enables the control of its electrical and optical properties. We transplant the concept of doping to macroscopic... 
INDIUM TIN OXIDE | MULTIDISCIPLINARY SCIENCES | Technology application | Usage | Semiconductor doping | Methods | Photonics | Tunneling | Media | Engineering | Permeability | Optical properties | Impurities | Semiconductors | Doping | Mathematical models | Metamaterials | Dielectrics
Journal Article
Materials Today, ISSN 1369-7021, 06/2004, Volume 7, Issue 6, pp. 34 - 40
A review is given here of recent results in developing improved control of growth, doping, and fabrication processes for ZnO devices with possible applications... 
MATERIALS SCIENCE, MULTIDISCIPLINARY | DEFECTS | SPIN | MONOCRYSTALS | PROCESSING | SEMICONDUCTOR RESISTORS | CRYSTAL STRUCTURE | ELECTRICAL PROPERTIES | MATERIALS SCIENCE | ENERGY LEVELS | IMPURITIES | CRYSTAL LATTICES | ACOUSTICS | MOLECULAR BEAM EPITAXY | PHOSPHORS | INTERSTITIALS | BINDING ENERGY | FABRICATION | OXIDES
Journal Article
1993, Cambridge studies in semiconductor physics and microelectronic engineering, ISBN 0521419190, Volume 1., xxii, 606
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials... 
Compound semiconductors | Semiconductor doping
Book
New Journal of Physics, ISSN 1367-2630, 12/2006, Volume 8, Issue 12, pp. 318 - 318
The polarization of graphene is calculated exactly within the random phase approximation for arbitrary frequency, wavevector and doping. At finite doping, the... 
GAS | GRAPHITE-INTERCALATION COMPOUNDS | PHYSICS, MULTIDISCIPLINARY | IMPURITIES | Physics - Mesoscale and Nanoscale Physics
Journal Article
Applied Surface Science, ISSN 0169-4332, 11/2014, Volume 319, Issue 1, pp. 167 - 172
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2013, Volume 103, Issue 25, p. 251607
We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene... 
LAYER GRAPHENE | TRANSISTOR | TRANSITION | PHYSICS, APPLIED | HETEROSTRUCTURES | ELECTRONICS | Photoelectric effect | First principles | Molybdenum disulfide | Landscape | Impurities | Graphene | Doping | Potential gradients | Rhenium | Photoelectric emission | Hybrid structures | Charge | Physics - Mesoscale and Nanoscale Physics
Journal Article
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2018, Volume 491, pp. 26 - 30
In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by... 
B2. Semiconducting germanium | A1. Doping | A1. Impurities | A3. Molecular beam epitaxy | A1. X-ray diffraction | EPITAXY | PHYSICS, APPLIED | GERMANIUM | FILMS | Impurities | MATERIALS SCIENCE, MULTIDISCIPLINARY | Doping | SILICON | X-ray diffraction | Molecular beam epitaxy | CRYSTALLOGRAPHY | Semiconducting germanium | Mass spectrometry | Analysis | Epitaxy | Electric properties
Journal Article