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Applied Physics Letters, ISSN 0003-6951, 08/2016, Volume 109, Issue 5
Here, we reveal a remarkable (and surprising) physical property of GaN: it is extremely wear resistant. In fact, we measured the wear rate of GaN is... 
Wear rate | Indium gallium nitrides | Gallium nitrides | Diamonds | Frictional wear | Wear resistance | Crystallography | Protective coatings | Sliding friction
Journal Article
Nano Letters, ISSN 1530-6984, 10/2004, Volume 4, Issue 10, pp. 1975 - 1979
We report a new and general strategy for efficient injection of carriers in active nanophotonic devices involving the synthesis of well-defined doped... 
LIGHT-EMITTING-DIODES | III-NITRIDES | GAN | NANODEVICES | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | DEVICES | INDIUM-PHOSPHIDE NANOWIRES | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
ACS Nano, ISSN 1936-0851, 03/2015, Volume 9, Issue 3, pp. 2868 - 2875
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2019, Volume 9, Issue 1, pp. 2313 - 12
III-nitride materials have been linked with a vast number of exciting applications from power electronics to solar cells. Herein, polycrystalline InN, GaN and... 
LIGHT-EMITTING-DIODES | THIN-FILMS | PHOTOLUMINESCENCE | INGAN | PERFORMANCE | MULTIDISCIPLINARY SCIENCES | GROWTH | INN | PHOTOANODES | FUTURE | OXYGEN-EVOLUTION | Films | Indium | Gallium
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2015, Volume 106, Issue 15, p. 151602
Surface functionalization via etching of high aspect ratio gallium nitride (GaN) nanostructures provides a way to modulate the optical properties in addition... 
LIGHT-EMITTING-DIODES | PHOSPHONIC-ACIDS | FUNCTIONALIZATION | VAPOR-PHASE EPITAXY | PHYSICS, APPLIED | GAN | GROWTH | SURFACE | INDIUM-TIN OXIDE | EMISSION | MONOLAYERS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2015, Volume 106, Issue 23, p. 231104
We report exceptionally low thresholds (9.1 mu J/cm(2)) for room temperature lasing at similar to 450 nm in optically pumped Gallium Nitride (GaN) nanobeam... 
SYSTEM | PHYSICS, APPLIED | INGAN QUANTUM-WELLS | MICRODISK CAVITIES | GAN | QUANTUM WELLS | OPTICAL PUMPING | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | CRYSTALS | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | TEMPERATURE RANGE 0273-0400 K | INDIUM COMPOUNDS | VISIBLE RADIATION | GALLIUM NITRIDES
Journal Article
Proceedings of the IEEE, ISSN 0018-9219, 10/1995, Volume 83, Issue 10, pp. 1306 - 1355
Journal Article
Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, 6/2011, Volume 108, Issue 25, pp. 10072 - 10077
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2014, Volume 116, Issue 11, p. 113104
In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and... 
LIGHT-EMITTING-DIODES | PHYSICS, APPLIED | ALINGAN | POLARIZATION | INGAN | EFFICIENCY DROOP | Thermal properties | Polarization (Electricity) | Optical properties | Analysis | Design and construction | Electron transport | Indium | Light-emitting diodes | Methods
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2017, Volume 122, Issue 6
In this paper, we study theoretically the hot electron transport in two nitride semiconductor solid solutions, InxGa1−xN and InxAl1−xN, in the electric fields... 
Solid solutions | Indium gallium nitrides | Electron drift velocity | Gallium nitrides | Aluminum | Dependence | Velocity distribution | Electron transport
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2015, Volume 106, Issue 23
We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity... 
Spontaneous emission | Thresholds | Indium gallium nitrides | Gallium nitrides | Quantum wells | Photonic crystals | Electronics | Diodes
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2019, Volume 126, Issue 8
Small changes in electrical conductance of quasi-2 dimensional samples often need to be measured at low temperatures, T∼1K and lower. Care needs to be taken to... 
Electrochemical potential | Resistance | Electric contacts | Gallium nitrides | Contact potentials | Contact resistance | Dimensional changes | Indium | Low resistance
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2017, Volume 122, Issue 7
The results of tensile strained AlN/GaN, AlGaN/GaN, and compressive strained InGaN/GaN superlattices (SLs) grown by Ammonia MBE (NH3-MBE) are presented. A... 
Misfit dislocations | Gallium nitrides | X-ray diffraction | Cathodoluminescence | Crystallography | Dislocations | Ammonia | Compressive properties | Indium gallium nitrides | Superlattices | Molecular beam epitaxy | Aluminum gallium nitrides | Heterostructures | Aluminum nitride
Journal Article
Advanced Materials, ISSN 0935-9648, 05/2000, Volume 12, Issue 10, pp. 738 - 741
GaN nanowires for high‐efficiency optoelectronic devices? The simple method for the large‐scale production of GaN nanowires presented here may bring us one... 
Nanowires, gallium nitride | Gallium | Indium | Gallium nitride
Journal Article
Materials Science and Technology, ISSN 0267-0836, 05/2016, Volume 32, Issue 8, pp. 737 - 745
Solid-state lighting based on light-emitting diodes (LEDs) is a technology with the potential to drastically reduce energy usage, made possible by the... 
Silicon substrates | Efficiency droop | Light-emitting diodes | Gallium nitride | Indium gallium nitride | Green | QUANTUM-WELL | RECOMBINATION | CRACK-FREE GAN | PHOTOLUMINESCENCE | FIELD | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | LEDS | DOPED GAN | GROWTH
Journal Article