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Sensors (Switzerland), ISSN 1424-8220, 12/2017, Volume 17, Issue 12, p. 2867
Journal Article
Sensors (Basel, Switzerland), ISSN 1424-8220, 01/2019, Volume 19, Issue 2, p. 298
This paper proposes a CMOS front-end readout-integrated circuit (ROIC) with on-chip non-uniformity compensation technique for a diode-based uncooled infrared... 
Differential integrato | ROIC | On-chip non-uniformity compensation | Diode-based infrared image sensor | Low power | ELECTROCHEMISTRY | CHEMISTRY, ANALYTICAL | INSTRUMENTS & INSTRUMENTATION | differential integrato | diode-based infrared image sensor | low power | on-chip non-uniformity compensation
Journal Article
Sensors (Switzerland), ISSN 1424-8220, 06/2018, Volume 18, Issue 6, p. 1688
We developed a multiband imaging CMOS image sensor (CIS) with a multi-storied photodiode structure, which comprises two photodiode (PD) arrays that capture two... 
3D stacked | Multiband imaging | CMOS image sensor | Near infrared | ELECTROCHEMISTRY | near infrared | CHEMISTRY, ANALYTICAL | INSTRUMENTS & INSTRUMENTATION | multiband imaging | Optical filters | Filtration | Incident light | Optical components | Digital cameras | Photodiodes | Infrared imagery | Pixels | Sensor arrays | Wiring | Thickness | CMOS | Banded structure | Sensors | Color imagery
Journal Article
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 09/2015, Volume 48, Issue 35, pp. 1 - 9
A heat-sensitive layer (TIO sub(2-x)) was successfully deposited by RF reactive magnetron sputtering for infrared (IR) image sensors at different relative mass... 
Stoichiometry | Infrared | Noise | Electrical resistivity | Images | Bolometers | Sensors | Titanium dioxide | Deposition
Journal Article
IEEE Sensors Journal, ISSN 1530-437X, 08/2018, Volume 18, Issue 16, pp. 6588 - 6595
Journal Article
Sensors (Switzerland), ISSN 1424-8220, 07/2015, Volume 15, Issue 7, pp. 16642 - 16653
Touchscreen interaction has become a fundamental means of controlling mobile phones and smartwatches. However, the small form factor of a smartwatch limits the... 
Infrared image sensor | Around device interface | Smartwatch touch interface | infrared image sensor | ELECTROCHEMISTRY | CHEMISTRY, ANALYTICAL | smartwatch touch interface | INSTRUMENTS & INSTRUMENTATION | around device interface
Journal Article
IEEE JOURNAL OF SOLID-STATE CIRCUITS, ISSN 0018-9200, 04/2018, Volume 53, Issue 4, pp. 1071 - 1078
A 320 x 240 back-illuminated (BI) time-of-flight CMOS image sensor with 10-mu m current-assisted photonic demodulator (CAPD) pixels has been developed. The BI... 
Active pixel sensors | infrared image sensors | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 04/2013, Volume 8713
Traditionally, daylight and night vision imaging systems have required image intensifiers plus daytime cameras. But SRI's new NV-CMOS(TM) image sensor... 
Digital imaging | Infrared | Noise reduction | Imaging | Images | Image intensifiers | Sunlight | Sensors
Journal Article
by Yang, F and Yu, K and Cong, H and Xue, CL and Cheng, BW and Wang, N and Zhou, L and Liu, Z and Wang, QM
ACS PHOTONICS, ISSN 2330-4022, 05/2019, Volume 6, Issue 5, pp. 1199 - 1206
Ge1-xSnx with a tunable bandgap that covers full shortwave infrared (SWIR) from 1 to 2.6 mu m presents a new paradigm for silicon-based SWIR photodetection.... 
PHYSICS, CONDENSED MATTER | germanium-tin | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | GRAPHENE PHOTODETECTOR | photodetector array | NANOSCIENCE & NANOTECHNOLOGY | hybrid structure | infrared | OPTICS | silicon photonics | graphene
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2016, Volume 63, Issue 1, pp. 120 - 127
A three-transistor pixel, front-side-illuminated CMOS image sensor is developed and realized using high-resistivity (HR) silicon (N a ≈ 10 12 cm -3 ) to... 
p-n junctions | Thyristors | Photodiodes | Substrates | high resistivity (HR) | Current measurement | crosstalk | near-infrared | punchthrough | Silicon | Arrays | Cathodes | Active pixel sensors (APSs) | High resistivity (HR) | Punchthrough | Crosstalk | Near-infrared | P-n junctions | CMOS | Sensors | Design analysis | Pixels | Image enhancement
Journal Article
IEEE Sensors Journal, ISSN 1530-437X, 01/2016, Volume 16, Issue 1, pp. 203 - 209
Journal Article
by Kim, SH and Choi, BS and Lee, J and Park, JH and Lee, KI and Shin, JK
SENSORS, ISSN 1424-8220, 04/2019, Volume 19, Issue 7, p. 1653
In this paper, we propose an averaging pixel current adjustment technique for reducing fixed pattern noise (FPN) in the bolometer-type uncooled infrared image... 
ELECTROCHEMISTRY | fixed pattern noise | current calibration | CHEMISTRY, ANALYTICAL | INSTRUMENTS & INSTRUMENTATION | ARRAY | uncooled infrared image sensor
Journal Article
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