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1. Full Text Flexible Broadband Image Sensors with SnS Quantum Dots/Zn2SnO4 Nanowires Hybrid Nanostructures
by Li, Ludong and Lou, Zheng and Shen, Guozhen
Advanced Functional Materials, ISSN 1616-301X, 02/2018, Volume 28, Issue 6, p. n/a
Broadband image sensors are widely studied and applied in many fields. However, developing high‐performance flexible broadband imaging is still a great... 
flexible electronics | QDs/NWs hybrid nanostructures | UV–vis–NIR photodetectors | broadband imaging | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | PERFORMANCE | STABILITY | DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CRYSTAL | ZN2SNO4 NANOWIRES | CHEMISTRY, MULTIDISCIPLINARY | ARRAYS | NEAR-INFRARED PHOTODETECTORS | ELECTRONICS | UV-vis-NIR photodetectors | Polyethylene terephthalate | Equipment and supplies | Image processing | Imaging systems | Target recognition | White light | Stability | Broadband | Quantum dots | Zinc stannate | Images | Nanostructure | Substrates | Vapor deposition | Endurance | Nanowires | Sensors
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2. Full Text Human eye-inspired soft optoelectronic device using high-density MoS2-graphene curved image sensor array
by Choi, Changsoon and Choi, Moon Kee and Liu, Siyi and Kim, Min Sung and Park, Ok Kyu and Im, Changkyun and Kim, Jaemin and Qin, Xiaoliang and Lee, Gil Ju and Cho, Kyoung Won and Kim, Myungbin and Joh, Eehyung and Lee, Jongha and Son, Donghee and Kwon, Seung-Hae and Jeon, Noo Li and Song, Young Min and Lu, Nanshu and Kim, Dae-Hyeong
Nature Communications, ISSN 2041-1723, 12/2017, Volume 8, Issue 1, pp. 1 - 11
Soft bioelectronic devices provide new opportunities for next-generation implantable devices owing to their soft mechanical nature that leads to minimal tissue... 
TRIAL | TRANSISTORS | THERAPY | PHOTODETECTORS | MULTIDISCIPLINARY SCIENCES | MOS2 PHOTOTRANSISTORS | SKIN | MONOLAYER | RETINAL PROSTHESIS | TRANSPARENT | ELECTRONICS | Infrared detectors | Immune response | Bioelectricity | Optoelectronic devices | Retina | Stimulation | Digital cameras | Rigidity | Composing | Infrared imagery | Electrical stimuli | Sensor arrays | Image acquisition | Strain | Finite element method | Eye | Side effects | Molybdenum disulfide | Graphene | Blindness | Nerves | Optical communication | Sensors
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3. Full Text Thin-film quantum dot photodiode for monolithic infrared image sensors
by Malinowski, Pawel E and Georgitzikis, Epimitheas and Maes, Jorick and Vamvaka, Ioanna and Frazzica, Fortunato and Van Olmen, Jan and De Moor, Piet and Heremans, Paul and Hens, Zeger and Cheyns, David
Sensors (Switzerland), ISSN 1424-8220, 12/2017, Volume 17, Issue 12, p. 2867
Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new... 
PbS | Quantum dot | Infrared | Image sensor | Imaging | Monolithic integration | LARGE-AREA | ELECTROCHEMISTRY | CHEMISTRY, ANALYTICAL | INSTRUMENTS & INSTRUMENTATION | monolithic integration | image sensor | quantum dot | infrared | imaging | Infrared detectors | Biometrics | Architecture | Quantum dots | Obstacle avoidance | Military applications | Infrared imagery | Augmented reality | Thin films | CMOS | Infrared tracking | Infrared imaging | Infrared cameras | Dark current | Sensors
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4. Full Text Giga-Pixel Lensfree Holographic Microscopy and Tomography Using Color Image Sensors
by Isikman, Serhan O and Greenbaum, Alon and Luo, Wei and Coskun, Ahmet F and Ozcan, Aydogan
PLoS ONE, ISSN 1932-6203, 09/2012, Volume 7, Issue 9, p. e45044
We report Giga-pixel lensfree holographic microscopy and tomography using color sensor-arrays such as CMOS imagers that exhibit Bayer color filter patterns.... 
SUPERRESOLUTION | SYSTEM | CELL-PHONE | DUAL-AXIS TOMOGRAPHY | RECONSTRUCTION | MULTIDISCIPLINARY SCIENCES | DIGITAL HOLOGRAPHY | RESOLUTION | OPTICAL DIFFRACTION TOMOGRAPHY | ON-CHIP MICROSCOPY | Microscopy - methods | Reproducibility of Results | Animals | Tomography - methods | Microscopy - instrumentation | Color | Tomography - instrumentation | Holography - methods | Image Processing, Computer-Assisted - instrumentation | Image Processing, Computer-Assisted - methods | Caenorhabditis elegans - anatomy & histology | Holography - instrumentation | Tomography | Sensors | Microscope and microscopy | Complementary metal oxide semiconductors | Image processing | Spatial discrimination | Holography | Optics | Pixels | Light sources | Sensor arrays | Numerical aperture | CMOS | Synthesis | Light | Infrared imaging systems | Holograms | Electrical engineering | Medical imaging | Digital imaging | Algorithms | Microscopy | Photographs | Arrays | Spatial resolution | Coherent light
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5. Full Text An analog-front ROIC with on-chip non-uniformity compensation for diode-based infrared image sensors
by Ye, Mao and Zhao, Gongyuan and Zhao, Gongyuan and Li, Yao and Zhao, Yiqiang and Zhao, Yiqiang
Sensors (Basel, Switzerland), ISSN 1424-8220, 01/2019, Volume 19, Issue 2, p. 298
This paper proposes a CMOS front-end readout-integrated circuit (ROIC) with on-chip non-uniformity compensation technique for a diode-based uncooled infrared... 
Differential integrato | ROIC | On-chip non-uniformity compensation | Diode-based infrared image sensor | Low power | ELECTROCHEMISTRY | CHEMISTRY, ANALYTICAL | INSTRUMENTS & INSTRUMENTATION | differential integrato | diode-based infrared image sensor | low power | on-chip non-uniformity compensation
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6. Full Text Multiband imaging CMOS image sensor with multi-storied photodiode structure
by Takemoto, Yoshiaki and Tsukimura, Mitsuhiro and Kato, Hideki and Suzuki, Shunsuke and Aoki, Jun and Kondo, Toru and Saito, Haruhisa and Gomi, Yuichi and Matsuda, Seisuke and Tadaki, Yoshitaka
Sensors (Switzerland), ISSN 1424-8220, 06/2018, Volume 18, Issue 6, p. 1688
We developed a multiband imaging CMOS image sensor (CIS) with a multi-storied photodiode structure, which comprises two photodiode (PD) arrays that capture two... 
3D stacked | Multiband imaging | CMOS image sensor | Near infrared | ELECTROCHEMISTRY | near infrared | CHEMISTRY, ANALYTICAL | INSTRUMENTS & INSTRUMENTATION | multiband imaging | Optical filters | Filtration | Incident light | Optical components | Digital cameras | Photodiodes | Infrared imagery | Pixels | Sensor arrays | Wiring | Thickness | CMOS | Banded structure | Sensors | Color imagery
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7. Full Text Update of single event effects radiation hardness assurance of readout integrated circuit of infrared image sensors at cryogenic temperature
by Artola, Laurent and Youssef, Ahmad Al and Ducret, Samuel and Perrier, Franck and Buiron, Raphael and Gilard, Olivier and Mekki, Julien and Boutillier, Mathieu and Hubert, Guillaume and Poivrey, Christian
Sensors (Switzerland), ISSN 1424-8220, 07/2018, Volume 18, Issue 7, p. 2338
This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout... 
Single event transient | Read out integrated circuit | Single event upsets | Infrared detector | Single event functional interrupt | Silicon | D-flip-flop | Cryogenic temperature | Radiation hardness assurance | Single event effects | ELECTROCHEMISTRY | single event effects | CHEMISTRY, ANALYTICAL | single event functional interrupt | ENVIRONMENT | cryogenic temperature | CMOS TECHNOLOGY | NM TECHNOLOGY | single event upsets | TRANSISTORS | IMPACT | INSTRUMENTS & INSTRUMENTATION | silicon | ORBIT | D-Flip-Flop | read out integrated circuit | DEVICES | infrared detector | LATCHUP | TRANSIENT | 50 K | radiation hardness assurance | single event transient | Integrated circuits | Infrared detectors | Assurance | Heavy ions | Single Event Effects | Irradiation | Sensors | Infrared imagery | Electronics | Engineering Sciences | Space Physics | Physics
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8. Full Text Light Confinement Effect Induced Highly Sensitive, Self‐Driven Near‐Infrared Photodetector and Image Sensor Based on Multilayer PdSe2/Pyramid Si Heterojunction
by Liang, Feng‐Xia and Zhao, Xing‐Yuan and Jiang, Jing‐Jing and Hu, Ji‐Gang and Xie, Wei‐Qiang and Lv, Jun and Zhang, Zhi‐Xiang and Wu, Di and Luo, Lin‐Bao
Small, ISSN 1613-6810, 10/2019, Volume 15, Issue 44, p. n/a
In this study, a highly sensitive and self‐driven near‐infrared (NIR) light photodetector based on PdSe2/pyramid Si heterojunction arrays, which are fabricated... 
black silicon | light manipulation | near‐infrared light | optoelectronic devices | 2D materials | HIGH-PERFORMANCE | near-infrared light | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CVD-GROWN GRAPHENE | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | NANOWIRE ARRAYS | PDSE2 | CHEMISTRY, MULTIDISCIPLINARY | SCHOTTKY JUNCTION | BROAD-BAND | RESPONSIVITY | TEMPERATURE | SILICON SOLAR-CELLS | HIGH-SPEED | Equipment and supplies | Sensors | Image processing | Analysis | Infrared detectors | Multilayers | Sensitivity | Optical properties | Photometers | Illumination | Heterojunction devices | Infrared imagery
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9. Bolometric properties of reactively sputtered TiO sub(2-x) films for thermal infrared image sensors
by Reddy, Y Ashok Kumar and Kang, In-Ku and Shin, Young Bong and Lee, Hee Chul
Journal of Physics D: Applied Physics, ISSN 0022-3727, 09/2015, Volume 48, Issue 35, pp. 1 - 9
A heat-sensitive layer (TIO sub(2-x)) was successfully deposited by RF reactive magnetron sputtering for infrared (IR) image sensors at different relative mass... 
Stoichiometry | Infrared | Noise | Electrical resistivity | Images | Bolometers | Sensors | Titanium dioxide | Deposition
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10. Full Text A 2.1-Mpixel Organic Film-Stacked RGB-IR Image Sensor With Electrically Controllable IR Sensitivity
by Machida, Shin'ichi and Shishido, Sanshiro and Tokuhara, Takeyoshi and Yanagida, Masaaki and Yamada, Takayoshi and Izuchi, Masumi and Sato, Yoshiaki and Miyake, Yasuo and Nakata, Manabu and Murakami, Masashi and Harada, Mitsuru and Inoue, Yasunori
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 01/2018, Volume 53, Issue 1, pp. 229 - 235
This paper describes an RGB-infrared (IR) organic CMOS image sensor with electrically controllable IR sensitivity. The sensitivities of all the pixels in the... 
IR image sensor | Indium tin oxide | Stacking | near infrared (IR) | Image sensors | Resistance | Sensitivity | Image color analysis | organic photoelectric conversion film (OPF) | wide dynamic range (WDR) | IR imaging | Threshold voltage | CMOS image sensor | RGB-IR image sensor | high resolution | ENGINEERING, ELECTRICAL & ELECTRONIC | CMOS | Stability | Infrared imaging | High resistance | Digital cameras | Sensors | Infrared imagery | Diodes | Pixels
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11. Full Text On the Analysis and Detection of Flames With an Asynchronous Spiking Image Sensor
by Lenero-Bardallo, Juan Antonio and Guerrero-Rodriguez, Jose-Maria and Carmona-Galan, Ricardo and Rodriguez-Vazquez, Angel
IEEE Sensors Journal, ISSN 1530-437X, 08/2018, Volume 18, Issue 16, pp. 6588 - 6595
We have investigated the capabilities of a custom asynchronous spiking image sensor operating in the Near Infrared band to study flame radiation emissions,... 
Flame monitoring | octopus | Dynamic range | NIR sensors | AER | asynchronous image sensors | Temperature sensors | Image sensors | CMOS | Cameras | Optical sensors | Monitoring | luminance sensors | INSTRUMENTS & INSTRUMENTATION | PHYSICS, APPLIED | REDUCTION | FOREST-FIRE DETECTION | ENGINEERING, ELECTRICAL & ELECTRONIC | Near infrared radiation | Redundancy | Emission analysis | Infrared cameras | Temporal resolution | Sensors | Spiking | Image detection
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12. Full Text Expansion of smartwatch touch interface from touchscreen to around device interface using infrared line image sensors
by Lim, Soo-Chul and Shin, Jungsoon and Kim, Seung-Chan and Park, Joonah
Sensors (Switzerland), ISSN 1424-8220, 07/2015, Volume 15, Issue 7, pp. 16642 - 16653
Touchscreen interaction has become a fundamental means of controlling mobile phones and smartwatches. However, the small form factor of a smartwatch limits the... 
Infrared image sensor | Around device interface | Smartwatch touch interface | infrared image sensor | ELECTROCHEMISTRY | CHEMISTRY, ANALYTICAL | smartwatch touch interface | INSTRUMENTS & INSTRUMENTATION | around device interface
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13. Full Text 320 x 240 Back-Illuminated 10-mu m CAPD Pixels for High-Speed Modulation Time-of-Flight CMOS Image Sensor
by Kato, Y and Sano, T and Moriyama, Y and Maeda, S and Yamazaki, T and Nose, A and Shiina, K and Yasu, Y and van der Tempel, W and Ercan, A and Ebiko, Y and Van Nieuwenhove, D and Sukegawa, S
IEEE JOURNAL OF SOLID-STATE CIRCUITS, ISSN 0018-9200, 04/2018, Volume 53, Issue 4, pp. 1071 - 1078
A 320 x 240 back-illuminated (BI) time-of-flight CMOS image sensor with 10-mu m current-assisted photonic demodulator (CAPD) pixels has been developed. The BI... 
Active pixel sensors | infrared image sensors | ENGINEERING, ELECTRICAL & ELECTRONIC
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14. Full Text 320×240 Back-Illuminated 10-μm CAPD Pixels for High-Speed Modulation Time-of-Flight CMOS Image Sensor
by Kato, Yuichi and Sano, Takuya and Moriyama, Yusuke and Maeda, Shunji and Yamazaki, Takeshi and Nose, Atsushi and Shiina, Kimiyasu and Yasu, Yohtaro and Van Der Tempel, Ward and Ercan, Alper and Ebiko, Yoshiki and Van Nieuwenhove, Daniel and Sukegawa, Shunichi
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 04/2018, Volume 53, Issue 4, pp. 1071 - 1078
Active pixel sensors | infrared image sensors
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15. Low-light NV-CMOS image sensors for day/night imaging
by Vogelsong, T and Tower, J and Senko, T and Levine, P and Janesick, J and Zhu, J and Zhang, D and van der Wal, G and Piacentino, M
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 04/2013, Volume 8713
Traditionally, daylight and night vision imaging systems have required image intensifiers plus daytime cameras. But SRI's new NV-CMOS(TM) image sensor... 
Digital imaging | Infrared | Noise reduction | Imaging | Images | Image intensifiers | Sunlight | Sensors
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16. Full Text Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector
by Yang, F and Yu, K and Cong, H and Xue, CL and Cheng, BW and Wang, N and Zhou, L and Liu, Z and Wang, QM
ACS PHOTONICS, ISSN 2330-4022, 05/2019, Volume 6, Issue 5, pp. 1199 - 1206
Ge1-xSnx with a tunable bandgap that covers full shortwave infrared (SWIR) from 1 to 2.6 mu m presents a new paradigm for silicon-based SWIR photodetection.... 
PHYSICS, CONDENSED MATTER | germanium-tin | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | GRAPHENE PHOTODETECTOR | photodetector array | NANOSCIENCE & NANOTECHNOLOGY | hybrid structure | infrared | OPTICS | silicon photonics | graphene
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17. Full Text Enhanced Near-Infrared Response CMOS Image Sensors Using High-Resistivity Substrate: Photodiodes Design Impact on Performances
by Lincelles, Jean-Baptiste and Marcelot, Olivier and Magnan, Pierre and Saint-Pe, Olivier and Breart de Boisanger, Michel
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2016, Volume 63, Issue 1, pp. 120 - 127
A three-transistor pixel, front-side-illuminated CMOS image sensor is developed and realized using high-resistivity (HR) silicon (N a ≈ 10 12 cm -3 ) to... 
p-n junctions | Thyristors | Photodiodes | Substrates | high resistivity (HR) | Current measurement | crosstalk | near-infrared | punchthrough | Silicon | Arrays | Cathodes | Active pixel sensors (APSs) | High resistivity (HR) | Punchthrough | Crosstalk | Near-infrared | P-n junctions | CMOS | Sensors | Design analysis | Pixels | Image enhancement
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18. Full Text Fusion of Infrared and Visible Sensor Images Based on Anisotropic Diffusion and Karhunen-Loeve Transform
by Bavirisetti, Durga Prasad and Dhuli, Ravindra
IEEE Sensors Journal, ISSN 1530-437X, 01/2016, Volume 16, Issue 1, pp. 203 - 209
Image fusion is a process of generating a more informative image from a set of source images. Major applications of image fusion are in navigation and... 
Anisotropic magnetoresistance | Smoothing methods | Imaging sensors | Image edge detection | Anisotropic diffusion | Infrared image sensors | KL-transform | Sensors | Edge preserving | Image fusion | edge preserving | imaging sensors | INSTRUMENTS & INSTRUMENTATION | PHYSICS, APPLIED | WAVELET | ENGINEERING, ELECTRICAL & ELECTRONIC | Defense industry | Algorithms | Computer vision | Approximation | Infrared | Image processing | Mathematical analysis | Images
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19. Full Text Averaging Pixel Current Adjustment Technique for Reducing Fixed Pattern Noise in the Bolometer-Type Uncooled Infrared Image Sensor
by Kim, SH and Choi, BS and Lee, J and Park, JH and Lee, KI and Shin, JK
SENSORS, ISSN 1424-8220, 04/2019, Volume 19, Issue 7, p. 1653
In this paper, we propose an averaging pixel current adjustment technique for reducing fixed pattern noise (FPN) in the bolometer-type uncooled infrared image... 
ELECTROCHEMISTRY | fixed pattern noise | current calibration | CHEMISTRY, ANALYTICAL | INSTRUMENTS & INSTRUMENTATION | ARRAY | uncooled infrared image sensor
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20. Full Text A Single-Chip Image Sensor Node With Energy Harvesting From a CMOS Pixel Array
by Jong Hwan Ko and Amir, Mohammad Faisal and Ahmed, Khondker Zakir and Taesik Na and Mukhopadhyay, Saibal
IEEE Transactions on Circuits and Systems I: Regular Papers, ISSN 1549-8328, 09/2017, Volume 64, Issue 9, pp. 2295 - 2307
This paper presents a single-chip image sensor node with energy harvesting from the pixel array. The design includes a 128 × 96 pixel array that can be... 
Image sensors | Regulators | wireless image sensor | moving object detection | self-powered system | CMOS image sensor | System-on-chip | Energy harvesting | Voltage control | Sensor arrays | Pipeline processing | ENGINEERING, ELECTRICAL & ELECTRONIC | Image processing | Complementary metal oxide semiconductors | Research | Electric potential | Moving object recognition | Object recognition | Pixels | Image detection | Image quality | CMOS | Pipelining (computers) | Digital imaging | Microprocessors | Photovoltaic cells | Energy dissipation | Power management | Memory (computers) | Sensors | Infrared imaging systems | Energy management
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