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Energies, ISSN 1996-1073, 02/2018, Volume 11, Issue 3, p. 595
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 04/2012, Volume 27, Issue 4, pp. 2204 - 2212
High-voltage switches required in present power electronics applications are realized by connecting existing devices in series. Unequal sharing of voltage... 
Insulated gate bipolar transistors | Active gate control | Snubbers | Logic gates | optimum capacitance | Clamps | voltage balancing | Voltage control | Integrated circuit modeling | Transient analysis | insulated gate bipolar transistors | HIGH-VOLTAGE | ENGINEERING, ELECTRICAL & ELECTRONIC | Bipolar transistors | Research
Journal Article
2015, ISBN 9781455731435, xxxi, 699
The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and... 
Insulated gate bipolar transistors | Electronics & communications engineering
Book
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 2019, Volume 7, Issue 1, pp. 979 - 983
A new thyristor injection concept is proposed to decrease conductivity modulation effects in an Insulated Gate Bipolar Transistor (TI-IGBT), which adds a... 
Insulated gate bipolar transistors | Thyristors | Electric potential | Conductivity modulation | IGBT | Modulation | Doping | Conductivity | saturation voltage drop | thyristor injection | Transistors | P-N-P collector | POWER CONVERTERS | ENGINEERING, ELECTRICAL & ELECTRONIC | Power converters | Semiconductor devices | Computer simulation | Circuits | Threshold voltage
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2019, pp. 1 - 6
A novel 4H-SiC multizone collector vertical insulated-gate bipolar transistor (MZC-IGBT) with an alternate P⁺/P⁻/P⁺ multizone structure in the collector region... 
4H-SiC insulated-gate bipolar transistor (IGBT) | switching loss | high frequency | carrier extraction
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 10/2016, Volume 31, Issue 10, pp. 7171 - 7182
Journal Article
by Li, JN and Zhan, KT
Journal of Beijing University of Chemical Technology, ISSN 1671-4628, 11/2011, Volume 38, Issue 6, pp. 104 - 108
The Silvaco technology computer aided design (TCAD) component simulation software based on semiconductor theory has been used to simulate an insulated gate... 
Insulated gate bipolar transistors | Electric potential | Silicon carbide | Computer simulation | Semiconductors | Threshold voltage | Drift | Buffers
Journal Article
by Li, JN and Zhan, KT
Journal of Beijing University of Chemical Technology, ISSN 1671-4628, 11/2011, Volume 38, Issue 6, pp. 104 - 108
The Silvaco technology computer aided design (TCAD) component simulation software based on semiconductor theory has been used to simulate an insulated gate... 
Insulated gate bipolar transistors | Electric potential | Silicon carbide | Computer simulation | Semiconductors | Threshold voltage | Drift | Buffers
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2019, Volume 66, Issue 1, pp. 219 - 231
Journal Article
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