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2005, EMIS processing series, ISBN 9780863413537, Volume no. 6, xvii, 350
Book
1989, 2nd ed. --, ISBN 0070193398, xvi, 540
Book
Journal of the American Chemical Society, ISSN 0002-7863, 10/2011, Volume 133, Issue 39, pp. 15221 - 15223
Multicolor photoluminescent graphene quantum dots (GQDs) with a uniform size of ∼60 nm diameter and 2–3 nm thickness were prepared by using unsubstituted... 
Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Science & Technology | Graphene | Optical properties | Photoluminescence | Integrated circuit fabrication | Research | Structure | Dispersion | Methods
Journal Article
Accounts of chemical research, ISSN 0001-4842, 04/2006, Volume 39, Issue 4, pp. 249 - 257
This Account describes a new paradigm for large-area nanoscale patterning that combines bottom-up and top-down approaches, merging chemistry with fabrication... 
Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Science & Technology | Molecular crystals | Integrated circuit fabrication | Usage | Research | Structure | Nanotechnology
Journal Article
2016, ISBN 9814669318, 550
GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the... 
Electromagnetics & Microwaves | Optoelectronics | Microelectronics | Compound semiconductors | Integrated circuits
eBook
Chemistry of materials, ISSN 0897-4756, 06/2012, Volume 24, Issue 11, pp. 1975 - 1991
.... Their physical properties afford them applications in a vast network of active microelectronic research fields, including logic device scaling in very large scale integrated circuits, sensor devices... 
bottom-up | nanowires | semiconductors | fabrication | top-down | Physical Sciences | Chemistry | Materials Science | Technology | Materials Science, Multidisciplinary | Chemistry, Physical | Science & Technology
Journal Article
Applied physics letters, ISSN 1077-3118, 01/2015, Volume 106, Issue 1, p. 014105
.... The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems. (C) 2015 AIP Publishing LLC. 
Physical Sciences | Physics | Science & Technology | Physics, Applied | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | SILICON | POTENTIALS | SENSORS | INTEGRATED CIRCUITS | COMPUTERIZED SIMULATION | FIELD EFFECT TRANSISTORS | OSCILLATORS | TRANSIENTS | TUNGSTEN | FABRICATION | SEMICONDUCTOR MATERIALS | SILICON OXIDES | WATER
Journal Article
1979, ISBN 9780835930925, x, 193
Book
Physica status solidi. A, Applications and materials science, ISSN 1862-6300, 09/2018, Volume 215, Issue 18, p. n/a
Journal Article