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Nanoscale Research Letters, ISSN 1931-7573, 12/2019, Volume 14, Issue 1, pp. 1 - 6
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2018, Volume 65, Issue 12, pp. 5428 - 5433
Journal Article
Monthly Notices of the Royal Astronomical Society, ISSN 0035-8711, 2013, Volume 428, Issue 3, pp. 2118 - 2140
Journal Article
Physical Review Letters, ISSN 0031-9007, 2011, Volume 106, Issue 2, p. 028701
Using the unique features of the electronic band structure of GaNxAs1-x alloys, we have designed, fabricated and tested a multiband photovoltaic device. The... 
PHYSICS, MULTIDISCIPLINARY | ALLOYS | SEMICONDUCTORS | GAP | NITROGEN | LIMIT | DOT INTERMEDIATE-BAND | EFFICIENCY
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 03/2012, Volume 98, pp. 240 - 244
The intermediate band solar cell (IBSC) is based on a novel photovoltaic concept and has a limiting efficiency of 63.2%, which compares favorably with the... 
Solar cell | Recombination | Concentrated light | Quantum dots | Intermediate band | PHYSICS, APPLIED | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | EFFICIENCY | Solar energy industry | Nanotechnology
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 06/2019, Volume 27, Issue 6, pp. 528 - 539
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 04/2019, Volume 29, Issue 4, pp. 276 - 278
Journal Article
ACS Applied Materials and Interfaces, ISSN 1944-8244, 08/2017, Volume 9, Issue 34, pp. 28737 - 28742
The ultraviolet (UV) photodetectors have significant applications different fields. High detectivity, high responsivity and wide active area are required to... 
wide bandgap semiconductor | Bi-doped SnO | ultraviolet photodetector | intermediate band semiconductor | thin films | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | PEROVSKITE PHOTODETECTORS | NANOSCIENCE & NANOTECHNOLOGY | BLIND | DETECTORS | FILMS | OPTOELECTRONIC DEVICES | SNO2 | QUANTUM EFFICIENCY | SPECTRUM | Bi-doped SnO2 | NARROW-BAND
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 10/2015, Volume 141, pp. 39 - 48
The calculation of the energy spectrum and absorption coefficients of quantum dot nanostructured intermediate band solar cells using the Empiric K·P... 
Energy spectrum | Intermediate band solar cells | Photon absorption | Quantum calculations | STATES | PHYSICS, APPLIED | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | CYCLOTRON | GERMANIUM | RESONANCE | CRYSTALS | ELECTRONIC-STRUCTURE | Solar cells | Solar energy industry | Solar batteries
Journal Article
Materials Letters, ISSN 0167-577X, 05/2018, Volume 218, pp. 139 - 141
•A quantum dot solar cell is proposed by incorporating a ratchet band (RB).•Life time enhancement of generated minority photo carriers is discussed.•Spectral... 
Quantum dot | Recombination | Ratchet band | Intermediate band | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | EFFICIENCY
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 07/2012, Volume 102, pp. 44 - 49
Surface plasmon enhancement effect is investigated in InAs/GaAs quantum dots solar cell. A nontrivial enhancement was observed in the photocurrent, quantum... 
Solar cell | Quantum dot | Surface plasmon | Metallic nanoparticles | Intermediate band | PHYSICS, APPLIED | SELF-ASSEMBLED MONOLAYERS | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILVER
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 04/2016, Volume 147, pp. 94 - 100
Self-assembled InAs quantum dots (QD) in a GaAs1−xSbx matrix are studied using photoluminescence. Increasing the Sb composition in the GaAs1−xSbx matrix... 
Type-II quantum dots | Intermediate band solar cell | Defect mediated tunneling | PHYSICS, APPLIED | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | LIMIT | LAYER | EFFICIENCY
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 01/2017, Volume 25, Issue 1, pp. 76 - 86
This study demonstrated the feasibility of fabricating a highly stacked vertically aligned InGaAs/GaAs(Sb) quantum dot (QD) structure with an AlGaAsSb spacer... 
quantum dot | AlGaAsSb spacer layer | columnar dots | antimony | GaAsSb layer | intermediate‐band solar cell | intermediate-band solar cell | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | GAAS | EFFICIENCY | Solar cells | Capping | Alignment | Photovoltaic cells | Quantum dots | Gallium arsenide | Devices | Spacers
Journal Article