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IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2018, Volume 65, Issue 7, pp. 2694 - 2698
Journal Article
IEEE Transactions on Industrial Electronics, ISSN 0278-0046, 04/2016, Volume 63, Issue 4, pp. 1995 - 2004
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2017, Volume 38, Issue 8, pp. 1082 - 1085
Short-term demonstrations of packaged 4H-SiC junction field-effect transistor (JFET) logic integrated circuits (ICs) at temperatures exceeding 800 °C in air... 
Integrated circuits | Temperature measurement | Temperature | Ovens | High-temperature techniques | Current measurement | Logic gates | JFETs | JFET integrated circuits | Silicon carbide | Circuit design | Ambient temperature | Field effect transistors | JFET | Ceramics | Acceleration | Transistors | Packaging design | Assembly | Design optimization
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2016, Volume 37, Issue 5, pp. 625 - 628
This letter reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 h of... 
Silicon carbide | Metals | Integrated circuit interconnections | Logic gates | JFETs | Integrated circuit reliability | Testing | JFET integrated circuits
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2018, Volume 65, Issue 7, pp. 2744 - 2750
The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of... 
Analytical model | Electric potential | MOSFET | junction field-effect transistor (JFET) | compact model | Logic gates | circuit simulation | JFETs | Mathematical model | Integrated circuit modeling | Junctions | temperature effect | VOLTAGE | PHYSICS, APPLIED | JFET | FIELD-EFFECT TRANSISTORS | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2016, Volume 63, Issue 4, pp. 1416 - 1422
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 241 - 243
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2018, Volume 65, Issue 12, pp. 5329 - 5336
One of the key challenges for vertical GaN power devices is their complex fabrication process. We present the first experimental realization of a GaN-based... 
Annealing | Field-effect transistor (FET) | Logic gates | junction FET (JFET) | vertical power devices | JFETs | Epitaxial growth | Gallium nitride | P-n junctions | gallium nitride | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | JFET | Electronic devices | Semiconductor devices | Field effect transistors | Current modulation
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 09/2019, Volume 34, Issue 9, pp. 8613 - 8625
Silicon carbide (SiC) junction field-effect transistor (JFET) based bi-directional switches (BDSs) have great potential in the construction of several power... 
MOSFET | Silicon carbide | Bi-directional switches (BDSs) | Snubbers | ferrite ring | snubber capacitors | Switches | Logic gates | JFETs | silicon carbide junction field-effect transistor (SiC JFET) | Oscillators | equivalent circuit model | bi-directional switches | SiC JFET | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Industrial Electronics, ISSN 0278-0046, 07/2011, Volume 58, Issue 7, pp. 2872 - 2882
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2018, Volume 39, Issue 5, pp. 723 - 726
Silicon carbide (SiC) n-channel and p-channel junction field-effect transistors (JFETs) were fabricated by direct ion implantation into a high-purity... 
Integrated circuits | Ion implantation | Silicon carbide | Estimation | semi-insulating substrate | Logic gates | JFET | JFETs | SiC | Substrates | ion implantation
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 08/2012, Volume 27, Issue 8, pp. 3843 - 3854
This paper investigates the switching behavior of normally OFF silicon carbide (SiC) JFETs in an inverter for a motor drive. The parasitic ringing caused by... 
Couplings | Silicon carbide | Switches | Logic gates | JFETs | Capacitive coupling | ringing dampening | silicon carbide (SiC) JFET | Heat sinks | Oscillators | parasitic oscillations | ENGINEERING, ELECTRICAL & ELECTRONIC | Control | Usage | Field-effect transistors | Materials | Oscillation | Influence | Research
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2019, Volume 40, Issue 6, pp. 866 - 869
We demonstrate normally-off 400 °C operation of n-channel and p-channel junction field-effect transistors (JFETs) fabricated by an ion implantation into a... 
Integrated circuits | Ion implantation | Silicon carbide | SiC JFET | normally-off | Logic gates | Ions | JFETs | Substrates | Semiconductor devices | Field effect transistors | Silicon substrates | Purity | Controllability | JFET | Threshold voltage | High temperature
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2018, Volume 65, Issue 10, pp. 4455 - 4461
This paper proposes an accurate modeling method to inspect the resistance of JFET region in a silicon carbide (SiC) MOSFET in which piecewise linear... 
Resistance | Semiconductor device modeling | MOSFET | Silicon carbide | Doping | JFETs | Semiconductor process modeling | JFET region | silicon carbide (SiC) | semiconductor device modeling | PHYSICS, APPLIED | POWER | ENGINEERING, ELECTRICAL & ELECTRONIC | Approximation | Computer simulation | Mathematical analysis | JFET | Model accuracy | MOSFETs
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 209 - 211
We developed normally-off diamond junction field-effect transistors with narrow channel widths. The p-channel device with the narrowest channel width of 0.26... 
Fabrication | Boron | Diamonds | Logic gates | Junction Field-Effect Transistors (JFETs) | Normally-off | Threshold voltage | Diamond | JFETs | Junctions | junction field-effect transistors (JFETs) | normally-off | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 2019, Volume 7, Issue 1, pp. 100 - 110
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2018, Volume 112, Issue 9, p. 93501
The I-V and C-V characteristics of CdTe/CdS heterojunctions deposited in-situ by Pulsed Laser Deposition (PLD) were evaluated. In-situ deposition enables the... 
THIN-FILMS | PHYSICAL-PROPERTIES | SUBSTRATE-TEMPERATURE | PHYSICS, APPLIED | JFETS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2019, Volume 66, Issue 3, pp. 1396 - 1401
A new 500-V ON-state breakdown voltage (ON-BV) parasitic JFET is proposed in this paper. Compared with traditional structures, a special junction field-effect... 
Electrodes | Breakdown voltage (BV) | junction field-effect transistor (JFET) | high voltage (HV) | Impact ionization | JFETs | Current density | Junctions | Substrates | Breakdownvoltage (BV) | VOLTAGE | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Electric potential | Semiconductor devices | Ionization | Field effect transistors | Breakdown | JFET | Drift | High voltages | Electric fields
Journal Article
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