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Journal of Applied Crystallography, ISSN 1600-5767, 04/1997, Volume 30, Issue 2, pp. 171 - 175
The program DISCUS is a versatile tool for the analysis of diffuse scattering and for defect structure simulations. The model structure can be created from an... 
K FI CRYSTALLOGRAPHY | CRYSTALLOGRAPHY
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 08/1997, Volume 30, Issue 4, pp. 461 - 466
The unit‐cell parameters of quartz, SiO2, have been determined by single‐crystal diffraction at 22 pressures to a maximum pressure of 8.9 GPa (at room... 
SINGLE-CRYSTAL | CAF2 | NACL | K FI CRYSTALLOGRAPHY | X-RAY-DIFFRACTION | STATE | CALCIUM-FLUORIDE | CRYSTALLOGRAPHY | EQUATION
Journal Article
Nature Communications, ISSN 2041-1723, 08/2015, Volume 6, Issue 1, p. 8004
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 08/1997, Volume 30, Issue 4, pp. 421 - 426
Experience with a variety of diffraction data‐reduction problems has led to several strategies for dealing with mismeasured outliers in multiply measured data... 
K FI CRYSTALLOGRAPHY | STATISTICAL DESCRIPTORS | CRYSTALLOGRAPHY
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 06/1997, Volume 30, Issue 3, pp. 418 - 419
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1997, Volume 181, Issue 1, pp. 165 - 169
ZnO single crystal thin films were grown by plasma enhanced molecular beam epitaxy on (0 0 0 1) sapphire. The growth modes of ZnO epilayers were investigated... 
Plasma | MBE | Optoelectronic | ZnO | Growth | Sapphire | optoelectronic | OXIDE | K FI CRYSTALLOGRAPHY | growth | CRYSTALLOGRAPHY | plasma | sapphire
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 06/1997, Volume 30, Issue 3, pp. 280 - 293
The design, development and performance of the time‐of‐flight (TOF) small‐angle diffractometer (SAD) at the Intense Pulsed Neutron Source (IPNS) at Argonne... 
DATA ACQUISITION-SYSTEM | SCATTERING DATA | K FI CRYSTALLOGRAPHY | MICELLAR | CRYSTALLOGRAPHY | RESOLUTION
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1997, Volume 178, Issue 1, pp. 147 - 156
This paper reviews the growth of GaN thick films by hydride vapor-phase epitaxy (HVPE). Emphasis is placed on recent developments, including the growth of... 
Substrate | Hydride vapor-phase epitaxy | Growth | Gallium nitride | hydride vapor-phase epitaxy | ZNO BUFFER LAYER | GAN FILM | K FI CRYSTALLOGRAPHY | gallium nitride | growth | CRYSTALLOGRAPHY | substrate
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1997, Volume 174, Issue 1, pp. 182 - 186
Si 1 − x Ge x single crystals (0 < x < 0.15) with diameter up to 2 in were grown by conventional Czochralski technique. The method for the growth of Ge 1 − x... 
SiGe | Automated control | Czochralski technique | Weight technique | K FI CRYSTALLOGRAPHY | weight technique | CRYSTALLOGRAPHY | automated control
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1997, Volume 177, Issue 3-4, pp. 211 - 216
Stoichiometric LiNbO single crystals have been grown using the top-seeded solution growth method from potassium containing flux. Spectroscopic properties (e.g.... 
Stoichiometry | IR absorption band | Lithium niobate | UV absorption edge | TSS growth | stoichiometry | K FI CRYSTALLOGRAPHY | lithium niobate | CRYSTALLOGRAPHY | ABSORPTION-BAND | CZOCHRALSKI
Journal Article
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, ISSN 0108-7681, 02/1997, Volume 53, pp. 32 - 43
The 23 Glazer tilt systems describing octahedral tilting in perovskites have been investigated. It is shown that in tilt systems a(+)a(+)a(-), a(+)b(+)b(-),... 
MAGNETORESISTANCE | CRYSTAL-STRUCTURE | K FI CRYSTALLOGRAPHY | CRYSTALLOGRAPHY
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1997, Volume 175, Issue 2, pp. 1063 - 1068
We have grown novel III–V diluted magnetic semiconductors, (Ga 1 − x Mn x )As, on GaAs substrates by low-temperature molecular beam epitaxy using strong... 
Diluted magnetic semiconductor | Ferromagnetic order | Low temperature MBE | GaMnAs | low temperature MBE | diluted magnetic semiconductor | K FI CRYSTALLOGRAPHY | MNAS THIN-FILMS | CRYSTALLOGRAPHY | ferromagnetic order
Journal Article
Journal of Applied Crystallography, ISSN 0021-8898, 06/1997, Volume 30, Issue 3, pp. 396 - 399
The OMIT electron-density-map calculation of Bhat [Bhat & Cohen (1984). J. Appl. Cryst. 17, 244-248; Bhat (1988). J. Appl. Cryst. 21, 279-281] is very... 
ERRORS | MODEL | K FI CRYSTALLOGRAPHY | CRYSTALLOGRAPHY
Journal Article
Zeitschrift für Kristallographie - Crystalline Materials, ISSN 2194-4946, 07/1997, Volume 212, Issue 7, pp. 506 - 509
This paper deals with X-ray single crystal experiments of modulated cobalt åkermanite at temperatures between 30 K and 600 K. The primary objective of these... 
K FI CRYSTALLOGRAPHY | CRYSTALLOGRAPHY
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 01/1997, Volume 170, Issue 1-4, pp. 817 - 821
The characteristics of metalorganic chemical vapor deposition (MOCVD) of Bi2Te3, Sb2Te3 and their superlattice structures are discussed in this paper. We have... 
K FI CRYSTALLOGRAPHY | CRYSTALLOGRAPHY | GROWTH-CONDITIONS
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 06/1997, Volume 30, Issue 3, pp. 345 - 352
The ORNL Ultra‐Small‐Angle Neutron Scattering (USANS) facility at the High Flux Isotope Reactor (HIFR) has been recently upgraded, using the Bonse–Hart... 
HYDROGEN | LOW-DENSITY POLYETHYLENE | THERMODYNAMICS | SATURATED-HYDROCARBON POLYMERS | DOUBLE-CRYSTAL DIFFRACTOMETER | SANS | K FI CRYSTALLOGRAPHY | CRYSTALLOGRAPHY | BLENDS
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 04/1997, Volume 30, Issue 2, pp. 203 - 205
By comparison of the accuracy and the merging R factor (Rmerge) of artificially created X‐ray data sets, it is demonstrated that Rmerge is a poor predictor for... 
K FI CRYSTALLOGRAPHY | CRYSTALLOGRAPHY
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/1997, Volume 182, Issue 1-2, pp. 17 - 22
Bulk single crystals of GaN and heteroepitaxial GaN layers were subjected to free-etching and mechano-chemical polishing in aqueous solutions (10-1N) of KOH... 
Chemical polishing | Bulk crystals | Etching | Epitaxial layers | Gallium nitride | POLARITY | etching | epitaxial layers | K FI CRYSTALLOGRAPHY | CRYSTALLOGRAPHY | chemical polishing | LAYERS | PRESSURE | FILMS | GROWTH | CRYSTALS | gallium nitride | ALKALINE-SOLUTION | bulk crystals | SURFACES | Atomic force microscopy | Liquors | Anisotropy | Epitaxy
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1997, Volume 175, Issue 2, pp. 1069 - 1074
GaAs-based diluted magnetic semiconductor, (Ga, Mn)As, with Mn composition x up to 0.07 was prepared by molecular-beam epitaxy on GaAs substrate at... 
III–V compounds | Molecular-beam epitaxy | Diluted magnetic semiconductors | Ferromagnetic order | Magnetic anisotropy | Superlattice | III-V compounds | superlattice | III-V SEMICONDUCTORS | K FI CRYSTALLOGRAPHY | diluted magnetic semiconductors | molecular-beam epitaxy | magnetic anisotropy | CRYSTALLOGRAPHY | ferromagnetic order
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1997, Volume 174, Issue 1-4, pp. 446 - 454
We have grown epitaxial α-Fe O (0 0 0 1) thin films on Pt(1 1 1)/α-Al O (0 0 0 1), and γ-Fe O (0 0 1) and Fe O (0 0 1) thin films on MgO(0 0 1) by molecular... 
Molecular beam epitaxy | Epitaxial thin film | Iron oxide | IRON-OXIDE | molecular beam epitaxy | iron oxide | epitaxial thin film | K FI CRYSTALLOGRAPHY | CRYSTALLOGRAPHY | MICROSCOPY
Journal Article
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