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2011, Designation / ASTM International, Volume E432-91., 3
Book
IEEE Journal of Solid - State Circuits, ISSN 0018-9200, 04/2017, Volume 52, Issue 4, p. 933
This paper introduces the first high-volume manufacturable (HVM) metal-fuse technology in a 14-nm trigate high-k metal-gate CMOS process. A high-density array... 
Leakage current
Journal Article
2006, Designation / ASTM International, Volume E479-91., 5
Book
ANZ Journal of Surgery, ISSN 1445-1433, 11/2018, Volume 88, Issue 11, pp. 1200 - 1201
Journal Article
2009, 3rd ed., AWWA manual, ISBN 1583216316, Volume M36, xv, 285
Book
2000, ISBN 1900222116
Book
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2015, Volume 62, Issue 7, pp. 2155 - 2161
Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes... 
Schottky diodes | GaN-on-Si vertical device | Silicon | Etching | Plasmas | Leakage currents | Edge termination | Gallium nitride | Substrates | leakage control | power electronics | leakage origin | TRANSISTORS | PHYSICS, APPLIED | REDUCTION | SCHOTTKY | REVERSE-BIAS LEAKAGE | ENGINEERING, ELECTRICAL & ELECTRONIC | Control | Diodes | Maintenance and repair | Electric currents | Electric properties
Journal Article
Electronics Letters, ISSN 0013-5194, 03/2018, Volume 54, Issue 5, pp. 270 - 272
Journal Article
Web Resource
2011, Designation / ASTM International, Volume E515-11., 3
Book
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