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Journal of Applied Physics, ISSN 0021-8979, 01/2015, Volume 117, Issue 4
Combining deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS, and minority carrier transient spectroscopy studies, we question the... 
High resolution | Level (quantity) | Spectrum analysis | Spectroscopic analysis | Minority carriers | Deep level transient spectroscopy | Defects
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 04/2018, Volume 742, pp. 296 - 303
In this paper the current understanding of defects in acceptor doped ZnO is briefly reviewed. The results of investigations of ZnO:As/n-GaN heterojunctions... 
Zinc oxide | P-type | Arsenic | Deep level transient spectroscopy | Defects | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | MOLECULAR-BEAM EPITAXY | SILICON | CHEMISTRY, PHYSICAL | LAYERS | EXTRACTION | SCHOTTKY DIODE
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 04/2018, Volume 535, pp. 237 - 241
A comprehensive understanding of defects in semiconductors remains of primary importance. In this paper the effectiveness of two of the most commonly used... 
Deep level defects | SiC | Spectroscopic resolution | Deep level transient spectroscopy | Admittance spectroscopy | Detection limit | PHYSICS, CONDENSED MATTER | PROFILES | JUNCTIONS | SILICON-CARBIDE | CENTERS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2014, Volume 104, Issue 19, p. 192106
Defect levels in kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have been investigated by current-mode deep level transient spectroscopy. Experiments were... 
Solar cells | Antisite defects | Photovoltaic cells | Efficiency | Spectrum analysis | Absorbers | Tin | Copper | Deep level transient spectroscopy | Defects | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | Chemical and Material Sciences | MATERIALS SCIENCE | SOLAR ENERGY
Journal Article
physica status solidi (a), ISSN 1862-6300, 09/2019, Volume 216, Issue 17, pp. 1900302 - n/a
Thermal double donors (TDDs) are created by heat treatment of Czochralski‐grown Si at temperatures around 450 °C. A family of individual defects with very... 
negative-U system | Laplace deep-level transient spectroscopy | thermal double donors | silicon | defects | PHYSICS, CONDENSED MATTER | STATES | PHYSICS, APPLIED | PASSIVATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | Spectrum analysis | Heat treatment | Level (quantity) | Asymmetry
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2018, Volume 124, Issue 10
Self-assembled InAs quantum dots in a GaAs matrix are studied by Laplace deep level transient spectroscopy (LDLTS). This technique is demonstrated to be... 
Self assembly | Quantum dots | Spectrum analysis | Ill-posed problems (mathematics) | Laplace transforms | Regularization | Deep level transient spectroscopy
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2007, Volume 101, Issue 10, pp. 103704 - 103704-5
Journal Article
physica status solidi (b), ISSN 0370-1972, 04/2017, Volume 254, Issue 4, pp. np - n/a
The presence of deep levels in a silicon–oxygen (Si–O) superlattice (SL) deposited on p‐type silicon substrates has been investigated by deep‐level transient... 
silicon | deep‐level transient spectroscopy | defects | superlattices | Schottky barrier | deep-level transient spectroscopy | OXYGEN SUPERLATTICES | PHYSICS, CONDENSED MATTER | DISLOCATIONS | STATES | CHEMICAL-VAPOR-DEPOSITION | ATOMIC LAYERS | GROWTH | Silicon | Chemical vapor deposition | Epitaxy | Spectrum analysis | Interlayers | Stacking faults | Barriers | Superlattices | Silicon substrates | Atomic structure | Defects
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2014, Volume 116, Issue 5, p. 54511
Journal Article
physica status solidi (b), ISSN 0370-1972, 04/2016, Volume 253, Issue 4, pp. 690 - 696
authoren Deep traps in platinum/mesoporous‐titanium‐dioxide hydrogen sensors are studied by deep‐level transient spectroscopy (DLTS) before, during, and after... 
platinum | Hydrogen sensors | Schottky barriers | deep‐level transient spectroscopy | TiO2 | Deep-level transient spectroscopy | TiO | Platinum | PHYSICS, CONDENSED MATTER | DEFECTS | ANATASE TIO2 SURFACE | TITANIA NANOTUBES | hydrogen sensors | RUTILE TIO2 | deep-level transient spectroscopy | Hydrogen | Spectrum analysis | Sensors | Spectroscopy | Binding energy | Exposure | Devices | Density
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2014, Volume 104, Issue 8, p. 82112
The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level... 
PHYSICS, APPLIED | SEMICONDUCTORS | Bulk density | Conduction bands | Schottky diodes | Gallium | Ohmic | Energy measurement | Energy distribution | Contact resistance | Palladium | Probability distribution functions | Density distribution | Diodes | Molybdenum | Thin films | Indium gallium zinc oxide | Spatial distribution | Spectrum analysis | Zinc oxide | Deep level transient spectroscopy
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 03/2016, Volume 119, Issue 9
Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information... 
Bulk density | Dislocation density | Electron traps | Vapor phase epitaxy | Threading dislocations | Electron irradiation | Spectrum analysis | Vapor phases | Minority carriers | Hole traps | Deep level transient spectroscopy | Defects
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2018, Volume 113, Issue 26
This work presents a study of trap levels in a mesoscopic multication lead halide perovskite solar cell structure. The investigation is performed by combining... 
Solar cells | Conduction bands | Photovoltaic cells | Spectrum analysis | Perovskites | Hole traps | Deep level transient spectroscopy | Electrical impedance
Journal Article
Thin Solid Films, ISSN 0040-6090, 03/2019, Volume 674, pp. 76 - 81
Deep level transient spectroscopy (DLTS) measurements on multilayer devices can be influenced by secondary barriers. Our starting point is a simple model used... 
Copper indium gallium selenide | Back contact | Deep level transient spectroscopy | Secondary barrier | PHYSICS, CONDENSED MATTER | STATES | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | BULK | MATERIALS SCIENCE, COATINGS & FILMS | Models | Indium | Spectrum analysis | Analysis
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2018, Volume 124, Issue 20
A border trap (BT) evaluation method was established for SiO2/GeO2/Ge gate stacks by using deep-level transient spectroscopy with a lock-in integrator. Ge... 
Conduction bands | Aluminum | Energy measurement | Metallizing | Valence band | Silicon dioxide | Metal oxides | Spectrum analysis | Position measurement | Germanium | Stacks | Germanium oxides | Deep level transient spectroscopy
Journal Article
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