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Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 03/2019, Volume 919, pp. 64 - 67
In this research, we found that some undoped crystals (LiAlO2 and LiGaO2) show pulse shape discrimination (PSD) capabilities, and we report some basic... 
PSD | Scintillator | LiGaO2 | LiAlO2 | Pulse shape discrimination | Neutron | LiAlO | LiGaO | EPITAXIAL-GROWTH | PHYSICS, NUCLEAR | INSTRUMENTS & INSTRUMENTATION | FILMS | NUCLEAR SCIENCE & TECHNOLOGY | ZNO | PHYSICS, PARTICLES & FIELDS
Journal Article
Zeitschrift für Physikalische Chemie, ISSN 0942-9352, 07/2017, Volume 231, Issue 7, pp. 1443 - 1453
Journal Article
Ceramics International, ISSN 0272-8842, 08/2017, Volume 43, pp. S376 - S380
Phase transformations of β-LiGaO2 (Pna21) under different pressure conditions are studied using first principles calculations. Under specific conditions, LGO... 
Phase transformations | LiGaO2 | High pressure | LiGaO | CRYSTAL | ZNO | MATERIALS SCIENCE, CERAMICS
Journal Article
Plasma Processes and Polymers, ISSN 1612-8850, 01/2016, Volume 13, Issue 1, pp. 147 - 160
Remote plasma processing is one of the most effective methods for the manipulation of intrinsic defects, doping, stoichiometry, and morphology of a large... 
remote H2 and N2 plasmas | ZnO | ellipsometry | LiGaO2 | LiAlO2 | remote H | plasmas | LiGaO | LiAlO | and N | Oxides | Plasma
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 05/2010, Volume 312, Issue 10, pp. 1665 - 1669
The (0 1 0) surface of LiGaO is closely lattice matched to A-plane (1 1 over(2, -) 0) GaN making it an interesting candidate as a substrate for heteroepitaxy... 
B1. LiGaO | B1. GaN | A3. Molecular beam epitaxy | B1. Non-polar nitrides | Molecular beam epitaxy | EPITAXY | Non-polar nitrides | CRYSTALLOGRAPHY | LiGaO2 | GaN
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2008, Volume 310, Issue 13, pp. 3144 - 3148
ZnO films were fabricated on LiGaO (0 0 1), (1 0 0) and (0 1 0) planes by RF magnetron sputtering. The structural, morphological and optical properties of... 
B1. LiGaO | A1. Atomic force microscopy | A1. X-ray diffraction | substrate | B2. ZnO films | THIN-FILMS | QUALITY | LiGaO2 substrate | R-PLANE SAPPHIRE | EPITAXIAL-GROWTH | X-ray diffraction | CRYSTALLOGRAPHY | atomic force microscopy | ZnO films | DEPENDENCE | TEMPERATURE | GAN | PULSED-LASER DEPOSITION | FREQUENCY | EMISSION
Journal Article
Chinese Physics B, ISSN 1674-1056, 09/2008, Volume 17, Issue 9, pp. 3313 - 3317
Journal Article
Computational Condensed Matter, ISSN 2352-2143, 09/2019, Volume 20, p. e00385
The structural and elastic properties of the LiGaO with an orthorhombic-type structure (Pna2 -LGO) under pressure were investigated using first-principles... 
Elastic constants | Under pressure | First-principles | LiGaO
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2012, Volume 340, Issue 1, pp. 61 - 65
In this paper, we report the growth of M -plane GaN thin films on LiGaO 2 (100) substrates pre-annealed in vacuum and in air ambient. The surface of M -plane... 
A3. Molecular beam epitaxy | B1. LiGaO 2 | B2. M-plane GaN | B1. LiGaO
Journal Article
Vacuum, ISSN 0042-207X, 05/2015, Volume 119, pp. 106 - 111
The structural and electronic properties of a wurtzite InN (11-20) film on an orthorhombic LiGaO 2 (001) substrate were systematically studied by... 
First-principles calculations | Surface/interface | LiGaO 2 | InN | Defects
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2006, Volume 292, Issue 1, pp. 125 - 128
Lattice-matched (Δa/a=1.8-3.4%) (0 0 1) LiGaO substrates have been employed for the first time to grow ZnO thin films by pulsed-laser deposition at 350-650 °C... 
B1. LiGaO | substrates | A3. Epitaxial growth | A3. Pulsed-laser deposition | B1. ZnO thin films | SAPPHIRE | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | OPTICAL-PROPERTIES | CRYSTALLOGRAPHY | pulsed-laser deposition | LiGaO2 substrates | TEMPERATURE | epitaxial growth | PLD TECHNIQUE | ZnO thin films | EMISSION
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 08/2015, Volume 44, Issue 8, pp. 2670 - 2678
Journal Article
Journal of Luminescence, ISSN 0022-2313, 02/2016, Volume 170, pp. 17 - 23
An intense green luminescence is observed from single crystals of LiGaO2 doped with copper. Czochralski-grown undoped crystals are wrapped in thin copper foil... 
LiGaO2 copper | EPR | Optical absorption | Photoluminescence | Thermoluminescence | copper | LiGaO | DEFECTS | OXIDE | SPECTROSCOPIC PROPERTIES | IDENTIFICATION | LIALO2 CRYSTALS | FILMS | RESONANCE | GROWTH | ZNO | OPTICS
Journal Article
Bulletin of the Korean Chemical Society, ISSN 0253-2964, 04/2004, Volume 25, Issue 4, pp. 480 - 484
LiGaO2 films have been grown on Si (100) substrates using a new single precursor [Li(OCH2CH2OCH3)(2)Ga(CH3)(2)](2) under high vacuum conditions (5 x 10(-6)... 
Metal organic chemical vapor deposition | Single precursor | GaN | LiGaO | MBE | metal organic chemical vapor deposition | LiGaO2 | single precursor | SUBSTRATE | GROWTH | MOCVD | CHEMISTRY, MULTIDISCIPLINARY | GAN THIN-FILMS
Journal Article
Materials Science & Engineering B, ISSN 0921-5107, 2010, Volume 170, Issue 1, pp. 9 - 14
Atomically flat surfaces for LiGaO 2 substrates have been achieved by annealing two face-to-face substrates at high temperature. Investigation reveals that for... 
Annealing | GaN | LiGaO 2 substrate | Epitaxial growth | Atomically flat surface
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/1998, Volume 186, Issue 3, pp. 409 - 419
This paper describes the Czochralski growth of LiGaO single crystal for use as a substrate for the epitaxial growth of hexagonal GaN. In c-axis pulling, unique... 
Substrate | Polarity | Etching | Epitaxial growth | GaN | LiGaO | PHYSICS, APPLIED | LiGaO2 | etching | epitaxial growth | INGAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | substrate | polarity
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2010, Volume 312, Issue 10, pp. 1665 - 1669
The (0 1 0) surface of LiGaO 2 is closely lattice matched to A-plane ( 1 1 2 ¯ 0 ) GaN making it an interesting candidate as a substrate for heteroepitaxy of... 
B1. GaN | A3. Molecular beam epitaxy | B1. LiGaO 2 | B1. Non-polar nitrides
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 02/1997, Volume 36, Issue 2, pp. L139 - L141
We succeeded in Czchoralski pulling of LiGaO2 single crystals and found for the first time unique domains that can be observed only by mechano-chemical... 
Crystal growth | Substrate | Polarity inversion | GaN | LiGaO | PHYSICS, APPLIED | LiGaO2 | crystal growth | polarity inversion | substrate
Journal Article
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