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Vacuum, ISSN 0042-207X, 05/2015, Volume 119, pp. 106 - 111
The structural and electronic properties of a wurtzite InN (11-20) film on an orthorhombic LiGaO 2 (001... 
First-principles calculations | Surface/interface | LiGaO 2 | InN | Defects
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2012, Volume 340, Issue 1, pp. 61 - 65
In this paper, we report the growth of M -plane GaN thin films on LiGaO 2 (100) substrates pre-annealed in vacuum and in air ambient... 
A3. Molecular beam epitaxy | B1. LiGaO 2 | B2. M-plane GaN | B1. LiGaO
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 08/2015, Volume 44, Issue 8, pp. 2670 - 2678
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2010, Volume 312, Issue 10, pp. 1665 - 1669
The (0 1 0) surface of LiGaO 2 is closely lattice matched to A-plane ( 1 1 2 ¯ 0 ) GaN making it an interesting candidate as a substrate for heteroepitaxy of non-polar GaN... 
B1. GaN | A3. Molecular beam epitaxy | B1. LiGaO 2 | B1. Non-polar nitrides
Journal Article
Materials Science & Engineering B, ISSN 0921-5107, 2010, Volume 170, Issue 1, pp. 9 - 14
Atomically flat surfaces for LiGaO 2 substrates have been achieved by annealing two face-to-face substrates at high temperature... 
Annealing | GaN | LiGaO 2 substrate | Epitaxial growth | Atomically flat surface
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2008, Volume 310, Issue 13, pp. 3144 - 3148
ZnO films were fabricated on LiGaO 2 (0 0 1), (1 0 0) and (0 1 0) planes by RF magnetron sputtering... 
A1. Atomic force microscopy | A1. X-ray diffraction | B1. LiGaO 2 substrate | B2. ZnO films
Journal Article
AIP Conference Proceedings, ISSN 0094-243X, 2011, Volume 1399, pp. 191 - 192
Conference Proceeding
Journal of Crystal Growth, ISSN 0022-0248, 2006, Volume 292, Issue 1, pp. 125 - 128
Lattice-matched (Δ a/ a=1.8–3.4%) (0 0 1) LiGaO 2 substrates have been employed for the first time to grow ZnO thin films by pulsed-laser deposition at 350–650... 
A3. Epitaxial growth | A3. Pulsed-laser deposition | B1. LiGaO 2 substrates | B1. ZnO thin films
Journal Article
Materials Letters, ISSN 0167-577X, 2006, Volume 60, Issue 25, pp. 3073 - 3075
Highly (0 0 1) orientation LiGaO 2 layers have been successfully fabricated on (1 0 0) β-Ga 2O 3 surface by vapor transport equilibration... 
LiGaO 2 | β-Ga 2O 3 | Vapor transport equilibration (VTE) | Composite substrate
Journal Article
Inorganic Chemistry Communications, ISSN 1387-7003, 2002, Volume 5, Issue 6, pp. 439 - 441
The reaction of Me 2MCl with two equivalents of Li(OCH 2CH 2OMe) resulted in the formation of dimeric bimetallic complexes, [Li(OCH 2CH 2OMe) 2MMe 2] 2 {M=Al ( 1), Ga ( 2... 
LiAlO 2 | LiGaO 2 | Single precursor | MOCVD
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1998, Volume 189, pp. 213 - 217
GaN thin films were grown at relatively low temperatures on multi-domain LiGaO 2 substrates by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE... 
GaN | LiGaO 2 | Epitaxial growth | ECR-MBE
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1998, Volume 189, pp. 208 - 212
The thermal expansion coefficient of a nearly lattice-matched substrate LiGaO 2 was investigated by dilatometry and the thermal expansion coefficients... 
Substrate | GaN | LiGaO 2 | Thermal expansion coefficient | Epitaxial growth
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1998, Volume 186, Issue 3, pp. 409 - 419
This paper describes the Czochralski growth of LiGaO 2 single crystal for use as a substrate for the epitaxial growth of hexagonal GaN... 
Substrate | GaN | LiGaO 2 | Polarity | Etching | Epitaxial growth
Journal Article
Journal of Luminescence, ISSN 0022-2313, 2001, Volume 93, Issue 3, pp. 205 - 212
.... There appear two PL excitation bands at 254 and 300 nm for both [ xZnGa 2O 4+(1− x)LiGaO 2] and [ xZnGa 2O 4+(1− x)Li 2O] phosphors. The PL spectrum of these phosphors... 
LiGa 5O 8 | Li + doping | LiGaO 2 | Photoluminescence | ZnGa 2O 4 | Li 2O
Journal Article
Surface Science, ISSN 0039-6028, 1998, Volume 411, Issue 3, pp. 329 - 343
The adsorption, desorption and interaction behavior of gallium and nitrogen with 6H-SiC(0001), LiGaO 2(001... 
Ammonia | Gallium | GaN | LiGaO 2 | Trimethylgallium | Synchrotron radiation photoelectron spectroscopy | SiC
Journal Article
Revista Principia, ISSN 1517-0306, 08/2017, Volume 1, Issue 36, pp. 60 - 67
A reabilitação robótica vem recebendo destaque nos últimos anos por suas pesquisas relevantes na busca de dirimir problemas relacionados a pessoas que sofreram... 
ligas com memória de forma 4 | material inteligente 3 | dedo artificial 1 | reabilitação robótica 2
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 7/2000, Volume 29, Issue 7, pp. 894 - 896
Journal Article
Neste trabalho foram feitas medidas da impedância complexa dos compostos Heusler Pd2MnSn e Pd2MnSb em função da freqüência, temperatura e campo magnético... 
Medidas de calor especifico | Fisica da materia condensada | Dominios magneticos | Temperatura de curie | Ligas de heusler
Dissertation
The electrochemical behavior of Ti grade 2 and Ti6Al4V alloy in citrate and Mcll Vaine buffers with halide ions addition in a pH range from 2 to 7,6 was investigated... 
Titanio : Ligas | Corrosao | Eletroquimica
Dissertation
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