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ligao2 (46) 46
gan (26) 26
physics, applied (22) 22
materials science, multidisciplinary (16) 16
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lialo2 (5) 5
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optical and electronic materials (4) 4
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surface (4) 4
thin-films (4) 4
氮化鎵 (4) 4
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a1. x-ray diffraction (3) 3
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halbleiter mit grosser energielücke (3) 3
ingan (3) 3
layers (3) 3
ligao2 substrates (3) 3
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solid state physics and spectroscopy (3) 3
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a1. atomic force microscopy (2) 2
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analysis (2) 2
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bonding (2) 2
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etching (2) 2
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Vacuum, ISSN 0042-207X, 09/2015, Volume 119, pp. 106 - 111
...) substrate were systematically studied by first-principle calculations. The In adsorption atoms are more favorable than the N atoms, the N... 
InN | First-principles calculations | Surface/interface | LiGaO2 | Defects | PHYSICS, APPLIED | ALN | CONSTANTS | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | CRYSTAL | HYDROGEN | FILMS | GAN | 1ST-PRINCIPLES CALCULATIONS | SURFACE
Journal Article
CRYSTENGCOMM, ISSN 1466-8033, 3/2013, Volume 15, Issue 14, pp. 2669 - 2674
The growth of c -plane GaN films on La 0.3 Sr 1.7 AlTaO 6 (LSAT) (111) substrates has been carried out by molecular beam epitaxy (MBE... 
LIGHT-EMITTING-DIODES | (LA,SR)(AL,TA)O-3 SINGLE-CRYSTALS | ZNO | CRYSTALLOGRAPHY | LIGAO2 | PLANE SAPPHIRE | CHEMISTRY, MULTIDISCIPLINARY | CZOCHRALSKI GROWTH | SURFACES
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2014, Volume 407, pp. 11 - 16
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2008, Volume 310, Issue 13, pp. 3144 - 3148
...), atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. It is found that the orientation of ZnO films is strongly dependent on the substrate plane. [0 0 0 1], [1 1̄ 0 0] and [1 1 2̄ 0... 
B1. LiGaO | A1. Atomic force microscopy | A1. X-ray diffraction | substrate | B2. ZnO films | THIN-FILMS | QUALITY | LiGaO2 substrate | R-PLANE SAPPHIRE | EPITAXIAL-GROWTH | X-ray diffraction | CRYSTALLOGRAPHY | atomic force microscopy | ZnO films | DEPENDENCE | TEMPERATURE | GAN | PULSED-LASER DEPOSITION | FREQUENCY | EMISSION
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2006, Volume 292, Issue 1, pp. 125 - 128
Lattice-matched (Δa/a=1.8-3.4%) (0 0 1) LiGaO substrates have been employed for the first time to grow ZnO thin films by pulsed-laser deposition at 350-650... 
B1. LiGaO | substrates | A3. Epitaxial growth | A3. Pulsed-laser deposition | B1. ZnO thin films | SAPPHIRE | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | OPTICAL-PROPERTIES | CRYSTALLOGRAPHY | pulsed-laser deposition | LiGaO2 substrates | TEMPERATURE | epitaxial growth | PLD TECHNIQUE | ZnO thin films | EMISSION
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 8/2015, Volume 44, Issue 8, pp. 2670 - 2678
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2014, Volume 402, pp. 325 - 329
Journal Article
JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248, 02/2012, Volume 340, Issue 1, pp. 61 - 65
In this paper, we report the growth of M-plane GaN thin films on LiGaO2 (100) substrates pre-annealed in vacuum and in air ambient... 
M-plane GaN | PHYSICS, APPLIED | LiGaO2 | MATERIALS SCIENCE, MULTIDISCIPLINARY | Molecular beam epitaxy | CRYSTAL | CRYSTALLOGRAPHY
Journal Article
by You, ST and Lo, I and Shih, HJ and Hang, HC and Chou, MMC
AIP Advances, ISSN 2158-3226, 07/2018, Volume 8, Issue 7, pp. 75116 - 075116-8
We have grown a high-quality single-phase M-plane GaN on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy. The Hooke’s law for M-plane GaN was derived... 
LIGHT-EMITTING-DIODES | PHYSICS, APPLIED | SEMICONDUCTORS | SUBSTRATE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | CRYSTAL | NITRIDE | LIGAO2 | POLARIZATION | Molecular beam epitaxy | Thermal expansion | Lattice strain | Molecular beams | Epitaxial growth
Journal Article
by Lin, WH and Chou, MMC and Wu, JJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, 2011, Volume 158, Issue 1, pp. D28 - D32
Small lattice-mismatched beta-LiGaO2 (001) substrates have been used for the epitaxial growth of (0001... 
ELECTROCHEMISTRY | SAPPHIRE | SINGLE-CRYSTALS | CHEMICAL-VAPOR-DEPOSITION | ZNO FILMS | ION-SCATTERING SPECTROSCOPY | SURFACE | ELECTRON-DIFFRACTION | GAN THIN-FILMS | MATERIALS SCIENCE, COATINGS & FILMS | INVERSION DOMAIN BOUNDARY | 010 LIGAO2
Journal Article
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, ISSN 0921-5107, 06/2010, Volume 170, Issue 1-3, pp. 9 - 14
Atomically flat surfaces for LiGaO substrates have been achieved by annealing two face-to-face substrates at high temperature... 
Annealing | Epitaxial growth | GaN | Atomically flat surface | substrate | LiGaO | LIGHT-EMITTING-DIODES | PHYSICS, CONDENSED MATTER | LiGaO2 substrate | MATERIALS SCIENCE, MULTIDISCIPLINARY | LITHIUM GALLATE | NITRIDE
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/1998, Volume 186, Issue 3, pp. 409 - 419
This paper describes the Czochralski growth of LiGaO single crystal for use as a substrate for the epitaxial growth of hexagonal GaN... 
Substrate | Polarity | Etching | Epitaxial growth | GaN | LiGaO | PHYSICS, APPLIED | LiGaO2 | etching | epitaxial growth | INGAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | substrate | polarity
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2001, Volume 79, Issue 9, pp. 1372 - 1374
.... Given the etch selectivity of the GaN/LiGaO2 system and the excellent performance of these devices, GaN device integration onto alternative substrates appears promising. (C... 
PHYSICS, APPLIED | PHOTODIODES | LIGAO2 | GAIN | FREQUENCY
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2005, Volume 52, Issue 8, pp. 1683 - 1688
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 1997, Volume 36, Issue 6, pp. L746 - L749
...}LiGaO2 substrates with a multi-domain structure. GaN thin alms grown on one domain, where the etching rate was high using an aqueous solution of nitric acid (H2O:HNO3=1:1), peeled off... 
PHYSICS, APPLIED | LiGaO2 | lattice matching | GaN | epitaxial growth | substrate
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 02/1997, Volume 36, Issue 2, pp. L139 - L141
We succeeded in Czchoralski pulling of LiGaO2 single crystals and found for the first time unique domains that can be observed only by mechano-chemical... 
Crystal growth | Substrate | Polarity inversion | GaN | LiGaO | PHYSICS, APPLIED | LiGaO2 | crystal growth | polarity inversion | substrate
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 06/1998, Volume 37, Issue 6 A, pp. L672 - L674
Terminating surface atoms of LiGaO2(001) substrate for GaN thin film growth have been directly identified by coaxial impact collision ion scattering spectroscopy (CAICISS... 
CAICISS | PHYSICS, APPLIED | LiGaO2 | surface | GaN | polar crystal | substrate
Journal Article
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, ISSN 0734-2101, 03/2017, Volume 35, Issue 2, p. 21511
The effects of extra H2O-modulated oxidation are reported on the structural, optical, and electrical properties of nonpolar m-plane ZnO thin films grown on m-plane Al2O3 substrates by atomic layer deposition... 
SAPPHIRE | PHYSICS, APPLIED | OXIDE SURFACES | CHEMICAL-VAPOR-DEPOSITION | MOLECULAR-BEAM EPITAXY | OPTICAL-PROPERTIES | GAMMA-LIALO2 SUBSTRATE | LIGAO2 | ADSORPTION | M-PLANE ZNO | MATERIALS SCIENCE, COATINGS & FILMS | NONPOLAR
Journal Article
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