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1. Full Text Molecular beam epitaxial growth and properties of Bi2Se 3 topological insulator layers on different substrate surfaces
by Chen, Zhiyi and Garcia, Thor Axtmann and De Jesus, Joel and Zhao, Lukas and Deng, Haiming and Secor, Jeff and Begliarbekov, Milan and Krusin-Elbaum, Lia and Tamargo, Maria C
Journal of electronic materials, ISSN 0361-5235, 2014, Volume 43, Issue 4, pp. 909 - 913
MBE
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2. Full Text Growth of single crystalline Si on graphene using RF-MBE: Orientation control with an AlN interface layer
by Bhuiyan, Ashraful G and Terai, Taiji and Katsuzaki, Tomohiro and Takeda, Naoki and Hashimoto, Akihiro
Applied surface science, ISSN 0169-4332, 05/2021, Volume 548, p. 149295
Graphene | AlN | RF-MBE
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3. Full Text Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn
by Rathore, Jaswant and Nanwani, Alisha and Mukherjee, Samik and Das, Sudipta and Moutanabbir, Oussama and Mahapatra, Suddhasatta
Journal of physics. D, Applied physics, ISSN 0022-3727, 2/2021, Volume 54, Issue 18, p. 185105
GeSn | MBE | compositional uniformity | epitaxy
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4. Full Text Structural, optical, and electrical properties of WZ- and RS-ZnCdO thin films on MgO (100) substrate by molecular beam epitaxy
by Jang, HyoChang and Saito, Katsuhiko and Guo, Qixin and Yu, Kin Man and Walukiewicz, Wladek and Tanaka, Tooru
Journal of alloys and compounds, ISSN 0925-8388, 06/2021, Volume 867, p. 159033
MBE growth | ZnCdO | Thin film
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5. Full Text Atomic scale microstructure and properties of se-deficient two-dimensional MoSe 2
by Lehtinen, Ossi and Komsa, Hannu-Pekka and Pulkin, Artem and Whitwick, Michael Brian and Chen, Ming-Wei and Lehnert, Tibor and Mohn, Michael J and Yazyev, Oleg V and Kis, Andras and Kaiser, Ute and Krasheninnikov, Arkady V
ACS nano, ISSN 1936-0851, 03/2015, Volume 9, Issue 3, pp. 3274 - 3283
CVD | MBE | stoichiometry | DFT | microstructure | defects | 2D TMD | HRTEM
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6. Full Text Substitutional incorporation of Sn in compressively strained thin films of heavily-alloyed Ge1 − xSn x Ge semiconductor probed by x-ray absorption and diffraction methods
by Soo, Y L and Wu, T S and Chen, Y C and Shiu, Y F and Peng, H J and Tsai, Y W and Liao, P Y and Zheng, Y Z and Chang, S L and Chan, T S and Lee, J F and Sterbinsky, G E and Li, H and Cheng, H H
Semiconductor science and technology, ISSN 0268-1242, 09/2014, Volume 29, Issue 11
MBE | EXAFS
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7. Full Text Delta Doped Ga2O3 Field Effect Transistors with Regrown Ohmic Contacts
by Xia, Zhanbo and Joishi, Chandan and Krishnamoorthy, Sriram and Bajaj, Sanyam and Zhang, Yuewei and Brenner, Mark and Lodha, Saurabh and Rajan, Siddharth
IEEE electron device letters, ISSN 0741-3106, 04/2018, Volume 39, Issue 4, pp. 568 - 571
delta dope | MBE | MESFET | Gao | wide bandgap
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8. Full Text Growth of ferromagnetic Co2FeSi films on flexible Ge(111)
by Yamada, Shinya and Higashi, Hidenori and Kanashima, Takeshi and Hamaya, Kohei
Materials science in semiconductor processing, ISSN 1369-8001, 06/2020, Volume 112, p. 104997
Heusler alloys | MBE | TFT | Spintronics
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9. Full Text Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires
by Zhang, Zhi and Zheng, Kun and Lu, Zhen-Yu and Chen, Ping-Ping and Lu, Wei and Zou, Jin
Nano letters, ISSN 1530-6984, 02/2015, Volume 15, Issue 2, pp. 876 - 882
InAs nanowires | MBE | Epitaxial growth | defect-free
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10. Full Text Line and Point Defects in MoSe 2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy
by Liu, Hongjun and Zheng, Hao and Yang, Fang and Jiao, Lu and Chen, Jinglei and Ho, Wingkin and Gao, Chunlei and Jia, Jinfeng and Xie, Maohai
ACS nano, ISSN 1936-0851, 06/2015, Volume 9, Issue 6, pp. 6619 - 6625
MBE | 2D materials | defects | STM/S | MoSe 2 bilayer
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11. Full Text NO 2 gas sensor based on graphene decorated with Ge quantum dots
by Dong, Linxi and Zheng, Pengrong and Yang, Yuekun and Zhang, Miao and Xue, Zhongying and Wang, Ziwen and Liu, Guanyu and Li, Panlin and Teh, Kwok Siong and Su, Yanjie and Cai, Baofang and Wang, Gaofeng and Di, Zengfeng
Nanotechnology, ISSN 0957-4484, 02/2019, Volume 30, Issue 7
MBE | Ge quantum dot | gas sensor | grapheme
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12. Full Text Growth of single crystal non-polar (112¯0) ZnSnN 2 films on sapphire substrate
by Le, Duc Duy and Ngo, Trong Si and Hong, Soon-Ku
Applied surface science, ISSN 0169-4332, 07/2019, Volume 481, pp. 819 - 824
MBE | Nonpolar | Epitaxy | ZnSnN2 | Single crystal
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13. Full Text Tuning transport and magnetic properties of Co x Fe 3-x O 4 thin films by Co content
by Nguyen, Van Quang and Shin, Yooleemi and Duong, Anh Tuan and Cho, Sunglae and Meny, Christian
Journal of alloys and compounds, ISSN 0925-8388, 01/2019, Volume 772, pp. 1095 - 1099
MBE | Magnetic | Spinel | Transition metal oxides | CoFe
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14. Full Text Triaxially uniform high-quality Al x Ga (1-x) N (x ∼ 50%) nanowires on template free sapphire substrate
by Sarkar, Ritam and Ghosh, Kankat and Bhunia, S and Nag, D and Khiangte, Krista R and Laha, Apurba
Nanotechnology, ISSN 0957-4484, 02/2019, Volume 30, Issue 6, pp. 065603 - 065603
PA-MBE | UV light | AlGaN nanowires
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15. Full Text InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot
by Alnami, Najla and Kumar, Rahul and Kuchuk, Andrian and Maidaniuk, Yurii and Saha, Samir K and Alnami, Alaa A and Alhelais, Reem and Kawagy, Alaa and Ware, Morgan E and Mazur, Yuriy I and Salamo, Gregory J
Solar energy materials and solar cells, ISSN 0927-0248, 06/2021, Volume 224, p. 111026
Solar cell | MBE | Quantum dot | Efficiency | Submonolayer | Intermediate band
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16. Full Text Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer
by Zhang, Chaomin and Alberi, Kirstin and Honsberg, Christiana and Park, Kwangwook
Applied surface science, ISSN 0169-4332, 05/2021, Volume 549, p. 149245
MBE | II-VI semiconductors | Epitaxial regrowth | III-V semiconductors
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17. Full Text Epitaxial Gd 2 O 3 on GaN and AlGaN: A potential candidate for metal oxide semiconductor based transistors on Si for high power application
by Ghosh, Kankat and Das, S and Khiangte, K.R and Choudhury, N and Laha, Apurba
Journal of physics. D, Applied physics, ISSN 0022-3727, 10/2017, Volume 50, Issue 47
epitaxial Gd2O3 | MOS-HEMT | PA-MBE
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18. Full Text An effective method to calculate RHEED rocking curves from nanoheteroepitaxial systems
by Daniluk, Andrzej and Żurawek, Lucyna and Zdyb, Ryszard
Computer physics communications, ISSN 0010-4655, 04/2021, Volume 261, p. 107692
MBE | Numerical simulations | Scientific computing | RHEED | Diffuse scattering
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19. Full Text Epitaxial Growth of Single Layer Blue Phosphorus: A New Phase of Two-Dimensional Phosphorus
by Zhang, Jia Lin and Zhao, Songtao and Han, Cheng and Wang, Zhunzhun and Zhong, Shu and Sun, Shuo and Guo, Rui and Zhou, Xiong and Gu, Cheng Ding and Yuan, Kai Di and Li, Zhenyu and Chen, Wei
Nano letters, ISSN 1530-6984, 08/2016, Volume 16, Issue 8, pp. 4903 - 4908
MBE | blue phosphorus | 2D material | STM | Materials Science | Materials Science, Multidisciplinary | Physics, Condensed Matter | Science & Technology - Other Topics | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Physical Sciences | Chemistry | Nanoscience & Nanotechnology | Technology | Chemistry, Multidisciplinary
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20. Full Text Epitaxial growth of high In-content In 0.41 Ga 0.59 N/GaN heterostructure on (11-20) Al 2 O 3 substrate
by Krishna, Shibin and Aggarwal, Neha and Mishra, Monu and Maurya, K.K and Kaur, Mandeep and Sehgal, Geetanjali and Singh, Sukhveer and Dilawar, Nita and Gupta, Bipin Kumar and Gupta, Govind
Journal of alloys and compounds, ISSN 0925-8388, 02/2016, Volume 658, pp. 470 - 475
InGaN | MBE | a-plane sapphire | HRXRD
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