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Interdisciplinary Journal of Economics and Business Law, ISSN 2047-8747, 01/2018, Volume 7, p. 335
The introduction of Information technology and Management Information Systems (MIS) by organizations and businesses bring about changes for employees of the... 
MIS
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 02/2019, Volume 52, Issue 8, p. 85105
Journal Article
Earth and Planetary Science Letters, ISSN 0012-821X, 12/2012, Volume 357-358, pp. 226 - 237
Marine Isotope Stage (MIS) 11 was possibly the longest (~423,000-362,000 yr ago) and warmest interglacial of the entire Quaternary Period. This resulted from a... 
GIS | EAIS | MIS | TT-OSL | MIS 11 | MIS 5e | OSL | South Africa | Global warming | GIA | WAI
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2010, Volume 31, Issue 3, pp. 189 - 191
Journal Article
Quaternary Science Reviews, ISSN 0277-3791, 09/2019, Volume 220, pp. 230 - 243
Journal Article
Quaternary Science Reviews, ISSN 0277-3791, 07/2019, Volume 216, pp. 18 - 33
The environmental and climatic evolution of the late Middle Pleistocene to Late Pleistocene of the northeastern Italy is determined for Marine Isotope Stage 7... 
MIS 7 | MIS 5 | MIS 5/4 | Middle Palaeolithic | MIS 3 | Southwestern Europe | Micromammals | SMALL-VERTEBRATE ASSEMBLAGE | RODENT PALAEOFAUNAS | AUTONOMOUS REGION | TEIXONERES CAVE MOIA | PALEOCLIMATIC RECONSTRUCTION | GEOGRAPHY, PHYSICAL | GEOSCIENCES, MULTIDISCIPLINARY | GROTTA DI FUMANE | CUEVA DEL CAMINO | MOUNTAIN ENVIRONMENT | UPPER PALEOLITHIC TRANSITION
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2011, Volume 99, Issue 3, pp. 031115 - 031115-3
A thermally stable metal-insulator-semiconductor (MIS) Schottky-type photodiode with high performance based on the InGaN film is demonstrated at high... 
PHYSICS, APPLIED | MIS DIODES
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 12, pp. 1497 - 1499
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 09/2016, Volume 49, Issue 39, p. 393001
Recent years have witnessed GaN-based devices delivering their promise of unprecedented power and frequency levels and demonstrating their capability as an... 
MIS structure | interface state | GaN | HEMT | AlGaN | HIGH-PERFORMANCE | SAPPHIRE SUBSTRATE | PHYSICS, APPLIED | ELECTRON-MOBILITY TRANSISTORS | HIGH-BREAKDOWN VOLTAGE | C-V | FIELD-EFFECT TRANSISTORS | INALN/ALN/GAN HEMTS | BAND-OFFSET MEASUREMENTS | CURRENT COLLAPSE SUPPRESSION | LEAKAGE CURRENT MECHANISMS | ATOMIC LAYER DEPOSITION
Journal Article
Applied Surface Science, ISSN 0169-4332, 07/2019, Volume 481, pp. 219 - 225
We demonstrate patterned Al O formation by post-plasma oxidation of a thin layer of aluminium (Al) film deposited by electron beam evaporator in area selective... 
Annealing | MIS-HEMT | Oxide-Plasma
Journal Article
1986, 2nd ed. --, ISBN 0135863228, xii, 691
Book
Spine, ISSN 0362-2436, 12/2010, Volume 35, Issue Supplement, pp. S294 - S301
Journal Article
2005, EMIS processing series, ISBN 9780863413537, Volume no. 6, xvii, 350
Book
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