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2005, EMIS processing series, ISBN 9780863413537, Volume no. 6, xvii, 350
Book
JOURNAL OF ALLOYS AND COMPOUNDS, ISSN 0925-8388, 08/2011, Volume 509, Issue 31, pp. 8001 - 8007
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2019, Volume 66, Issue 9, pp. 3967 - 3972
Journal Article
Semiconductors, ISSN 1063-7826, 12/2016, Volume 50, Issue 12, pp. 1614 - 1618
It is shown that the formation of Au nanoparticles at the insulator–silicon interface in structures with a high density of surface states results in a shift of... 
Physics | Magnetism, Magnetic Materials | Physics, general | GOLD NANOPARTICLES | STABILIZED ZIRCONIA | PHYSICS, CONDENSED MATTER | OXIDE | Nanoparticles | Capacitors | Analysis | GOLD | ELECTRONS | SILICON | MATERIALS SCIENCE | ELECTRONIC STRUCTURE | NANOPARTICLES | PHOTOEMISSION | INTERFACES | DIELECTRIC MATERIALS | SEMICONDUCTOR MATERIALS | VALENCE | FERMI LEVEL | SURFACES
Journal Article
Nano Letters, ISSN 1530-6984, 06/2016, Volume 16, Issue 6, pp. 3689 - 3695
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2017, Volume 38, Issue 1, pp. 5 - 8
By adopting the charge-plasma concept, dopingless FETs with metal-semiconductor and metal-insulator-semiconductor (MIS) contacts in parallel at the... 
Contacts | Dopingless | Metals | Tunneling | Logic gates | Electric variables | Insulators | Silicon | metal-insulator-semiconductor (MIS) contact | tunneling | TRANSISTOR | MOSFET | metal-insulator-semiconductor(MIS) contact | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 08/2017, Volume 56, Issue 8
Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlOx) in the tunnel... 
POLYSILICON | PHYSICS, APPLIED | SILICON SOLAR-CELLS | MIS | JUNCTIONS | OXIDES | SELECTIVE CONTACTS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2010, Volume 108, Issue 12, pp. 124101 - 124101-15
Methods to extract trap densities at high-permittivity ( k ) dielectric/III-V semiconductor interfaces and their distribution in the semiconductor band gap are... 
TRANSISTOR | INSULATOR-SEMICONDUCTOR | PHYSICS, APPLIED | SURFACE STATES | MIS STRUCTURES | MODEL | AL2O3 | LAYER | C-V | GAAS | Gallium arsenide | Mechanical properties | Dielectrics | Indium | Electric properties | Magnetic properties | Manganese
Journal Article
Nature, ISSN 0028-0836, 10/2004, Volume 431, Issue 7010, pp. 826 - 829
The combination of conductors, semiconductors and insulators with well-defined geometries and at prescribed length scales, while forming intimate interfaces,... 
PHOTONIC CRYSTAL FIBERS | OPTICAL-FIBER | HOLLOW WAVE-GUIDES | MULTILAYER | MULTIDISCIPLINARY SCIENCES | Electronics | Conductivity | Insulation | Geometrical optics | Semiconductors | Fiber optics
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 01/2017, Volume 50, Issue 6, p. 65104
In this study we present a method for measuring bulk traps using deep-level spectroscopy techniques in metal-insulator-semiconductor (MIS) structures. We will... 
metal-insulator-semiconductor | spectroscopy | characterization | simulation | defects | deep levels | PHYSICS, APPLIED | ELECTRICAL CHARACTERIZATION | TRAPS | DLTS | INTERFACE STATES | MOS STRUCTURES | BAND | GROWN ZNO | TRANSIENT SPECTROSCOPY | FOURIER SPECTROSCOPY
Journal Article