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NANOTECHNOLOGY, ISSN 0957-4484, 12/2019, Volume 30, Issue 50
InAsxP1-x nanowires are promising building blocks for future optoelectronic devices and nanoelectronics. Their structure may vary from nanowire to nanowire,... 
PHYSICS, APPLIED | finite element method | x-ray diffraction | REDUCTION | InAsP nanowires | MATERIALS SCIENCE, MULTIDISCIPLINARY | misfit dislocations | GROWTH | DEFECT | GAAS NANOWIRES | NANOSCIENCE & NANOTECHNOLOGY | Monte Carlo simulation
Journal Article
Acta Materialia, ISSN 1359-6454, 06/2013, Volume 61, Issue 10, pp. 3709 - 3723
Creep of single-crystal superalloys is governed by dislocation glide, climb, reactions and annihilation. Discrete three-dimensional (3D) dislocation dynamics... 
Simulation | Creep | Superalloys | Dislocation dynamics | ULTRAFINE-GRAINED METALS | HIGH-VOLUME FRACTION | INTERNAL-STRESSES | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | HIGH-TEMPERATURE CREEP | GAMMA/GAMMA'-INTERFACES | MISFIT | LOW-STRESS CREEP | NICKEL-BASED SUPERALLOYS | PLASTIC-DEFORMATION
Journal Article
Surface Science, ISSN 0039-6028, 04/2019, Volume 682, pp. 43 - 50
•A metastable network of dislocations forms on a Cu monolayer on Ru(0001).•We observe the dislocation-covered region evolution by low-energy electron... 
CHEMISTRY, PHYSICAL | PT RECONSTRUCTION | PHYSICS, CONDENSED MATTER | GLIDE | METAL | Catalysis | Electron microscopy | Analysis | Dislocations | Thin films | Dislocation density | Organic chemistry | Diffusion rate | Misfit dislocations | Edge dislocations | Decay rate | Diffusion barriers | Islands | Deposition | Film growth
Journal Article
International Journal of Plasticity, ISSN 0749-6419, 11/2018, Volume 110, pp. 1 - 18
Journal Article
Computer Physics Communications, ISSN 0010-4655, 08/2016, Volume 205, pp. 13 - 21
Journal Article
Applied Physics Express, ISSN 1882-0778, 1/2010, Volume 3, Issue 1, pp. 011004 - 011004-3
Epilayer lattice tilt has been observed by X-ray diffraction for heteroepitaxial AlGaN and InGaN films on $(11\bar{2}2)$ semipolar GaN substrates.... 
Journal Article
Materials Science & Engineering A, ISSN 0921-5093, 02/2015, Volume 626, pp. 406 - 414
Journal Article
physica status solidi (a), ISSN 1862-6300, 04/2017, Volume 214, Issue 4, p. n/a
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2018, Volume 483, pp. 265 - 268
Journal Article
Scripta Materialia, ISSN 1359-6462, 12/2015, Volume 109, pp. 11 - 14
Journal Article
Nano Letters, ISSN 1530-6984, 03/2015, Volume 15, Issue 3, pp. 1468 - 1475
In recently synthesized two-dimensional superlattices of graphene and boron nitride, the atomic structure of the interface is complicated by a 2% lattice... 
lattice relaxation | heteroepitaxy | interface structure | Graphene | hexagonal boron nitride | misfit dislocations | Superlattices | Lattices | Boron nitride | Ripples | Nanostructure | Atomic structure | Dislocations
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2017, Volume 122, Issue 22, p. 225703
We report a systematic study of high quality GaAs growths on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Various types of dislocation filter... 
PHYSICS, APPLIED | DEFECT REDUCTION | CHEMICAL-VAPOR-DEPOSITION | HETEROSTRUCTURES | MOLECULAR-BEAM EPITAXY | STRAINED-LAYER SUPERLATTICES | CONTRAST | HETEROEPITAXIAL LAYERS | MISFIT DISLOCATIONS | INGAAS | Molecular beam epitaxy | Gallium compounds | Optical properties | Analysis | Photoluminescence | Electric properties
Journal Article