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Angewandte Chemie International Edition, ISSN 1433-7851, 11/2019, Volume 58, Issue 48, pp. 17328 - 17334
...) to locate the positions of the nanoparticles within the host crystal. The nanoparticles are shown to preferentially associate with dislocations in a manner previously recognised for atomic impurities, rendering these defects visible by STORM... 
STORM | dislocation | nanostructure | calcium carbonate | crystal growth | NANOPARTICLES | DIFFUSION | STRAIN | CHEMISTRY, MULTIDISCIPLINARY | CALCITE | OCCLUSION | MISFIT DISLOCATIONS | Additives | Crystal defects | Nucleation | Misfit dislocations | Crystal dislocations | Quantum dots | Crystals | Object recognition | Calcite | Image reconstruction | Substrates | Nanoparticles | Single crystals | Nanocomposites | Impurities | Microscopy | Stochasticity | Dislocation loops | Three dimensional models | defect | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Journal Article
Computer Physics Communications, ISSN 0010-4655, 08/2016, Volume 205, pp. 13 - 21
Journal Article
Applied Physics Express, ISSN 1882-0778, 1/2010, Volume 3, Issue 1, pp. 011004 - 011004-3
...)$ semipolar GaN substrates. Complementary transmission electron microscopy demonstrates that epilayer tilt is a consequence of interfacial misfit dislocations with Burgers... 
Journal Article
Materials Science & Engineering A, ISSN 0921-5093, 02/2015, Volume 626, pp. 406 - 414
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2017, Volume 122, Issue 22, p. 225703
.... Various types of dislocation filter layers and growth temperatures of initial GaAs layer were investigated to reduce the threading dislocation densities in GaAs on GaP/Si... 
PHYSICS, APPLIED | DEFECT REDUCTION | CHEMICAL-VAPOR-DEPOSITION | HETEROSTRUCTURES | MOLECULAR-BEAM EPITAXY | STRAINED-LAYER SUPERLATTICES | CONTRAST | HETEROEPITAXIAL LAYERS | MISFIT DISLOCATIONS | INGAAS | Molecular beam epitaxy | Gallium compounds | Optical properties | Analysis | Photoluminescence | Electric properties
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2009, Volume 105, Issue 8, pp. 083507 - 083507-13
Journal Article
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 07/2017, Volume 470, pp. 135 - 142
•Relaxation and threading dislocation density of Ge1−xSnx/Ge/Si (001) epitaxial layers is determined.•Relaxation of Ge1−xSnx epilayers is (anti... 
Group IV semiconductors | Molecular beam epitaxy | Germanium-Tin alloy | Dislocations | THIN-FILMS | DEFECTS | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | X-RAY-DIFFRACTION | CRYSTALLOGRAPHY | MISFIT DISLOCATIONS
Journal Article