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IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 09/2018, Volume 66, Issue 9, pp. 4204 - 4215
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 05/2017, Volume 27, Issue 5, pp. 437 - 439
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 11/2014, Volume 62, Issue 11, pp. 2518 - 2525
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 09/2016, Volume 26, Issue 9, pp. 696 - 698
A K-band monolithic microwave integrated circuit (MMIC) transmit and receive (T/R) single pole double throw (SPDT) switch with low insertion loss, high... 
T/R switch | K-band | Gallium arsenide | Capacitors | Switches | Insertion loss | MMICs | Logic gates | Transistors | MMIC | stacked-FET | Gallium Arsenide | Poles | Arsenic | Semiconductor devices | Field effect transistors | MMIC (circuits)
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 04/2014, Volume 24, Issue 4, pp. 266 - 268
A X-band GaN monolithic microwave integrated circuits (MMIC) High Power Amplifier (HPA) suitable for future generation Synthetic Aperture Radar systems is... 
monolithic microwave integrated circuits (MMICs) | Power measurement | Current measurement | GaN | power amplifiers (PAs) | MMICs | X-band | Frequency measurement | Gallium nitride | Power generation | Synthetic aperture radar | ENGINEERING, ELECTRICAL & ELECTRONIC | Noise levels | Gallium nitrides | Power amplifiers | MMIC (circuits) | Microwaves | Optimization
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 12/2018, Volume 66, Issue 12, pp. 5685 - 5695
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2016, Volume 37, Issue 5, pp. 684 - 687
Low-noise amplifier is one of the most attractive applications of graphene transistors in the RF area. In this letter, a graphene amplifier MMIC is fabricated... 
Noise figure | RF electronics | bilayer graphene | Graphene | MMICs | Logic gates | Epitaxial growth | low noise amplifier | Transistors | Gain | MMIC
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 12/2018, Volume 28, Issue 12, pp. 1128 - 1130
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 04/2017, Volume 27, Issue 4, pp. 365 - 367
This letter presents an integrated Doherty power amplifier (PA) in 0.25-μm GaN on SiC process. Designed for 15-GHz point-to-point radios, the PA exhibits an... 
Doherty | MMICs | Microwave circuits | microwave monolithic integrated circuit (MMIC) | Predistortion | Gallium nitride | Power generation | Gain | gallium nitride | ENGINEERING, ELECTRICAL & ELECTRONIC | Gallium nitrides
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 04/2017, Volume 27, Issue 4, pp. 359 - 361
A broadband monopulse comparator MMIC (Monolithic Microwave Integrated Circuit) based on GaAs process is presented in this Letter. The comparator network... 
Power dividers | Couplings | Passive MMIC | MMICs | wideband monopulse comparator | Broadband communication | Broadband antennas | Antenna arrays | ENGINEERING, ELECTRICAL & ELECTRONIC | Broadband | Gallium arsenide | Channels | MMIC (circuits) | Magic tees
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 03/2016, Volume 64, Issue 3, pp. 826 - 835
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and room-temperature operation in general and take the stability and... 
Cryogenic | InP HEMT | Linearity | low-noise amplifiers (LNAs) | Cryogenics | Logic gates | HEMTs | MMICs | Noise measurement | monolithic microwave integrated circuit (MMIC) | POWER | BAND | ENGINEERING, ELECTRICAL & ELECTRONIC | Usage | Research | Amplifiers (Electronics) | Indium | Gates (Electronics) | Transistors | Amplification | Stability | Semiconductor devices | MMIC (circuits) | Oscillations | Wideband
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 04/2014, Volume 24, Issue 4, pp. 263 - 265
A novel 2.14-GHz Doherty power amplifier (PA) was designed and fabricated using a 0.25- μm GaN on SiC monolithic microwave integrated circuit (MMIC), to build... 
Base stations | gallium nitride (GaN) | Power amplifiers | MMICs | Impedance | long-term evolution (LTE) | monolithic microwave integrated circuit (MMIC) | Gallium nitride | Inductors | Power generation | Doherty power amplifier (Doherty PA) | ENGINEERING, ELECTRICAL & ELECTRONIC | Construction | Silicon carbide | Gallium nitrides | MMIC (circuits) | Devices | Channels
Journal Article
Journal Article
IEEE Transactions on Terahertz Science and Technology, ISSN 2156-342X, 11/2011, Volume 1, Issue 2, pp. 477 - 487
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 09/2015, Volume 63, Issue 9, pp. 2833 - 2840
A high-power gallium-nitride (GaN) monolithic microwave integrated circuit (MMIC) operating over the 75-100-GHz band is reported. Using an on-chip... 
Couplings | monolithic microwave integrated circuits (MMICs) | power combining | solid-state power amplifier (SSPA) | W-band | Couplers | Bandwidth | MMICs | Logic gates | Gallium nitride | Power generation | Gallium-nitride (GaN) | ENGINEERING, ELECTRICAL & ELECTRONIC | Microwave integrated circuits | Gallium nitrate | Usage
Journal Article
Journal Article
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