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IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2002, Volume 49, Issue 2, pp. 221 - 225
A novel /spl delta/-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high-electron mobility transistor (TRST-HEMT) has been successfully fabricated by... 
MODFETs
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2001, Volume 48, Issue 7, pp. 1290 - 1296
A newly designed inverted delta-doped V-shaped GaInP/In/sub x/Ga/sub 1-x/As/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been successfully... 
MODFETs
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2019, Volume 66, Issue 3, pp. 1574 - 1578
We report on the high-field transport characteristics and saturation velocity in a modulation-doped \beta... 
Temperature measurement | saturation velocity | mobility | Epitaxial layers | Electric breakdown | modulation-doped field-effect transistor (MODFET) | high breakdown field | HEMTs | ᵝ-Ga₂O | Velocity measurement | MODFETs | 2-D electron gas (2DEG)
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/1999, Volume 46, Issue 6, pp. 1074 - 1080
Novel approach for making high-performance enhancement-mode InAlAs/InGaAs HEMT's (E-HEMT's) is described for the first time. Most important issue for the... 
MODFETs
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2009, Volume 30, Issue 2, pp. 107 - 109
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 988 - 990
We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency ( fT ) of 370 GHz. The... 
molecular beam epitaxy (MBE) | cutoff frequency | f_{T} | AlN | InAlN | MODFETs | Gallium nitride | Delay | high-electron-mobility transistor (HEMT) | regrown ohmic contacts | GaN | HEMTs | Logic gates | Ohmic contacts | transistor | INALN/GAN HEMTS | f(T) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2014, Volume 35, Issue 8, pp. 826 - 828
AlGaN/GaN high electron mobility transistors grown on Si, SiC, and sapphire substrates were exposed to 2-MeV proton irradiation in incremental fluences up to 6... 
Protons | Radiation effects | GaN | HEMT | HEMTs | proton irradiation | MODFETs | Gallium nitride | Substrates | Aluminum gallium nitride | DAMAGE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, 09/2016, Volume 4, Issue 3, pp. 707 - 719
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2001, Volume 79, Issue 20, pp. 3344 - 3346
We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si0.3Ge0.7 virtual substrates. The poor... 
PHYSICS, APPLIED | MOBILITY | MODFETS | THREADING DISLOCATION DENSITIES | LAYERS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2017, Volume 38, Issue 5, pp. 615 - 618
In this letter, we have proposed a novel AlGaN/GaN FinFET featuring T-shaped gate and extremely linearity of transconductance characteristics (Gm). The... 
Linearity | T-shaped gate | Logic gates | HEMTs | linearity characteristics | FinFETs | Wide band gap semiconductors | MODFETs | output power density | Aluminum gallium nitride | AlGaN/GaN | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 11/2019, pp. 1 - 1
In recent years, there has been a trend for improved performance in semiconductor switches, allowing power electronic systems to achieve higher efficiency and... 
Resistance | MOSFET | HEMTs | Wide Band gap | loss modeling | Silicon | Loss measurement | loss analysis | Gallium nitride | MODFETs | Dynamic Rdson
Journal Article
Solid State Sciences, ISSN 1293-2558, 06/2016, Volume 56, pp. 73 - 78
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2001, Volume 48, Issue 3, pp. 465 - 471
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2012, Volume 33, Issue 3, pp. 357 - 359
GaN-based heterostructure lateral Schottky barrier diodes (SBDs) grown on n-SiC substrate are investigated in this letter. These SBDs own very low onset... 
Schottky diodes | AlGaN/GaN Schottky diode | Switches | HEMTs | Capacitance | recessed Schottky diode | Anodes | Gallium nitride | MODFETs | lateral Schottky diode | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2017, Volume 38, Issue 5, pp. 619 - 622
In this letter, we report an InAlN/GaN high electron mobility transistor (HEMT) with a planar nanostrip channel design to improve its transconductance g m and... 
Resistance | GaN | Linearity | HEMTs | Logic gates | nanostrip | Nanoscale devices | high electron mobility transistor (HEMT) | MODFETs | Gallium nitride | nanowire | Nanowire | Nanostrip
Journal Article
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2014, Volume 35, Issue 4, pp. 443 - 445
Pulse behavior of insulated-gate double-field-plate power AlGaN/GaN HEMTs with C-doped buffers showing small current-collapse effects and dynamic RDS,on... 
GaN MOSHEMTs | current collapse | GaN HEMTs | Doping | HEMTs | carbon doping | Semiconductor process modeling | Gallium nitride | MODFETs | Carbon | Aluminum gallium nitride | GaN HFETs | Current collapse
Journal Article
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