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1. Molecular beam epitaxy
: a short history
by Orton, J. W. (John Wilfred)
2015, 1st edition., ISBN 9780199695829, xii, 516
Molecular beam epitaxy | History of Physics
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2. Full Text Molecular-beam epitaxy of GaSb on 6°-offcut (0 0 1) Si using a GaAs nucleation layer
by Rio Calvo, M and Rodriguez, J.-B and Cerutti, L and Ramonda, M and Patriarche, G and Tournié, E
Journal of crystal growth, ISSN 0022-0248, 01/2020, Volume 529, p. 125299
B1. Antimonides | A1. Atomic force microscopy | A1. Nucleation | A3. Molecular beam epitaxy | A1. X-ray diffraction | Nucleation | Gallium antimonides | Electron diffraction | Gallium arsenide | Epitaxy | Silicon substrates | Molecular beam epitaxy | High energy electrons | Islands | Physics - Materials Science | Condensed Matter | Materials Science | Micro and nanotechnologies | Microelectronics | Engineering Sciences | Physics
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3. Full Text AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900–1200°C temperature range
by Tamariz, Sebastian and Martin, Denis and Grandjean, Nicolas
Journal of crystal growth, ISSN 0022-0248, 10/2017, Volume 476, pp. 58 - 63
Ammonia molecular beam epitaxy | A3. Molecular beam epitaxy | AlN on silicon | A1. Reflection high energy electron diffraction | B1. Nitrides | Aluminum compounds | Ammonia | Epitaxy | Atomic force microscopy | Nitrides | Crystal defects | Defect annealing | Electron diffraction | Surface defects | Silicon substrates | Two dimensional flow | Dislocations | Crystallites | Silicon carbide | Molecular beam epitaxy | Roughening | Polarity | Epitaxial growth | Aluminum nitride
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4. Full Text Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy
by Ritzmann, Julian and Schott, Rüdiger and Gross, Katherine and Reuter, Dirk and Ludwig, Arne and Wieck, Andreas D
Journal of crystal growth, ISSN 0022-0248, 01/2018, Volume 481, pp. 7 - 10
B2. Semiconducting gallium arsenide | A1. Atomic force microscopy | A1. Surface processes | A3. Molecular beam epitaxy | A1. Diffusion | A1. Nucleation | A1. Recrystallization | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Atomic force microscopy | Annealing | Gallium arsenide | Epitaxy | Electric properties | Arsenic compounds | Studies | Scanning electron microscopy | Electrical properties | Molecular beam epitaxy | Surface roughness | Epitaxial growth | Electron microscopy | Substrates
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5. Full Text Critical thickness for strain relaxation of Ge1-xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)
by Wang, Wei and Zhou, Qian and Dong, Yuan and Tok, Eng Soon and Yeo, Yee-Chia
Applied physics letters, ISSN 0003-6951, 06/2015, Volume 106, Issue 23, p. 232106
Physical Sciences | Physics | Science & Technology | Physics, Applied | Strain relaxation | Molecular beam epitaxy | Tin | X-ray diffraction | Germanium | Mathematical models | Epitaxial growth
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6. Full Text Molecular Beam Epitaxy
: Materials and Applications for Electronics and Optoelectronics
by Asahi, Hajime and Horikoshi, Yoshiji
2019, 1, Wiley Series in Materials for Electronic & Optoelectronic Applications, ISBN 111935501X, 512
Components, Circuits, Devices and Systems | Computing and Processing | Fields, Waves and Electromagnetics | Photonics and Electrooptics | Power, Energy and Industry Applications | Crystal growth | Molecular beam epitaxy | Epitaxy | Electronics | Optoelectronics
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7. Full Text InAs1−xPx nanowires grown by catalyst-free molecular-beam epitaxy
by Isakov, I and Panfilova, M and Sourribes, M J L and Tileli, V and Porter, A E and Warburton, P A
Nanotechnology, ISSN 0957-4484, 2/2013, Volume 24, Issue 8
Physical Sciences | Materials Science | Nanoscience & Nanotechnology | Technology | Materials Science, Multidisciplinary | Science & Technology - Other Topics | Physics | Science & Technology | Physics, Applied | Quantum wires | Exact sciences and technology | Methods of nanofabrication | Materials science | Methods of deposition of films and coatings; film growth and epitaxy | Nanoscale materials and structures: fabrication and characterization | Molecular, atomic, ion, and chemical beam epitaxy | Cross-disciplinary physics: materials science; rheology | Chemical synthesis methods
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8. Full Text Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (0 0 1) substrate
by Wu, Yuanpeng and Wang, Yongjie and Sun, Kai and Mi, Zetian
Journal of crystal growth, ISSN 0022-0248, 02/2019, Volume 507, pp. 65 - 69
B3. Light emitting diodes | A3. Molecular beam epitaxy | B1. Nitrides | B2. Semiconducting III–V materials | A1. Nanostructures | A1. Substrates | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Aluminum | Emission | Silicon substrates | Light emitting diodes | Dislocations | Ultraviolet radiation | Molecular beam epitaxy | Organic light emitting diodes | Pressure ratio | Epitaxial growth | Nanowires | Emitters | Structural analysis
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9. Full Text Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy
by Lu, Jing and Luna, Esperanza and Aoki, Toshihiro and Steenbergen, Elizabeth H and Zhang, Yong-Hang and Smith, David J
Journal of applied physics, ISSN 0021-8979, 03/2016, Volume 119, Issue 9, p. 95702
Physical Sciences | Physics | Science & Technology | Physics, Applied | Usage | Indium | Structure | Electron microscopy | Optical properties | Organic chemistry | Image analysis | Microscopy | Superlattices | Skewed distributions | Molecular beam epitaxy | Antimony | Chemical diffusion | Epitaxial growth | Electron energy | Electron energy loss spectroscopy
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10. Full Text Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy
by Fedorov, V. V and Bolshakov, A. D and Kirilenko, D. A and Mozharov, A. M and Sitnikova, A. A and Sapunov, G. A and Dvoretckaia, L. N and Shtrom, I. V and Cirlin, G. E and Mukhin, I. S
CrystEngComm, ISSN 1466-8033, 6/2018, Volume 2, Issue 24, pp. 337 - 338
Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Crystallography | Science & Technology | Interlayers | Wurtzite | Gallium nitrides | Silicon nitride | Nanostructure | Density | Molecular chains | Transmission electron microscopy | Molecular beam epitaxy | Molecular beams | Epitaxial growth | Nanowires | Nanorods
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11. Full Text Molecular beam epitaxy growth of Mn4−xNixN thin films on MgO(0 0 1) substrates and their magnetic properties
by Komori, Taro and Anzai, Akihito and Gushi, Toshiki and Toko, Kaoru and Suemasu, Takashi
Journal of crystal growth, ISSN 0022-0248, 02/2019, Volume 507, pp. 163 - 167
B1. Mn4N | B1. Ni4N | A3. Molecular beam epitaxy | B1. MgO | A1. Crystal structure | B2. Magnetic materials | B1. Ni | B1. Mn | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Memory devices | Nickel base alloys | Electron diffraction | Materials substitution | Domain walls | Magnesium oxide | X-ray diffraction | Decomposition | Magnetic saturation | High energy electrons | Lattice parameters | Substrates | Thin films | X ray reflection | Magnetic anisotropy | Molecular beam epitaxy | Magnetism | Epitaxial growth | Crystal structure | Magnetic properties | Manganese
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12. Full Text Growth of self-assembled and position-controlled InN nanowires on Si (111) by molecular beam epitaxy
by Weiszer, Saskia and Zeidler, Andreas and de la Mata, María and Stutzmann, Martin
Journal of crystal growth, ISSN 0022-0248, 03/2019, Volume 510, pp. 56 - 64
Nanostructures | A3. Molecular beam epitaxy | B1. Nitrides | A1. Crystal morphology | B2. Semiconducting III-V materials | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Nitrides | Structure | Indium | Epitaxy | Crystals | Buffer layers | Self assembly | Scanning electron microscopy | Wurtzite | Silicon substrates | Transmission electron microscopy | Microscopy | Molecular beam epitaxy | Epitaxial growth | Nanowires | Indium oxides | Scanning transmission electron microscopy | Crystal structure
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13. Full Text Thermal transport in molecular beam epitaxy grown Si1 − xGex alloy films with a full spectrum of composition (x = 0–1)
by Wang, Yu-Sheng and Liu, Zheng-Chang and Ye, Jia-Jia and Zhang, Wang-Wei and Gu, Yu and Yan, Xue-Jun and Lu, Ming-Hui and Li, Deyu and Lu, Hong and Chen, Yan-Feng
Journal of applied physics, ISSN 0021-8979, 06/2019, Volume 125, Issue 21, p. 215109
Physical Sciences | Physics | Science & Technology | Physics, Applied | Thin films | Composition | Energy dissipation | Alloys | Molecular beam epitaxy | Silicon substrates | Thermal conductivity | Epitaxial growth | High temperature | Transport | Thermodynamic properties | Silicon germanides
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14. Full Text Selective area growth of GaN nanowires on Si(1 1 1) substrate with Ti masks by molecular beam epitaxy
by Li, Gang and Yao, Yangyi and Dagenais, Mario
Journal of crystal growth, ISSN 0022-0248, 10/2019, Volume 524, p. 125181
B1. InGaN quantum dot | B1. GaN nanowires | A3. Selective area growth | A3. Molecular beam epitaxy | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Buffer layers | Gallium nitrides | Quantum dots | Silicon substrates | Selectivity | Masks | Indium gallium nitrides | Molecular beam epitaxy | Titanium | Epitaxial growth | Nanowires | Critical temperature | Radio frequency plasma | Embedded structures
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