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2015, 1st edition., ISBN 9780199695829, xii, 516
Book
Journal of crystal growth, ISSN 0022-0248, 01/2020, Volume 529, p. 125299
B1. Antimonides | A1. Atomic force microscopy | A1. Nucleation | A3. Molecular beam epitaxy | A1. X-ray diffraction | Nucleation | Gallium antimonides | Electron diffraction | Gallium arsenide | Epitaxy | Silicon substrates | Molecular beam epitaxy | High energy electrons | Islands | Physics - Materials Science | Condensed Matter | Materials Science | Micro and nanotechnologies | Microelectronics | Engineering Sciences | Physics
Journal Article
3.
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AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900–1200°C temperature range
Journal of crystal growth, ISSN 0022-0248, 10/2017, Volume 476, pp. 58 - 63
Ammonia molecular beam epitaxy | A3. Molecular beam epitaxy | AlN on silicon | A1. Reflection high energy electron diffraction | B1. Nitrides | Aluminum compounds | Ammonia | Epitaxy | Atomic force microscopy | Nitrides | Crystal defects | Defect annealing | Electron diffraction | Surface defects | Silicon substrates | Two dimensional flow | Dislocations | Crystallites | Silicon carbide | Molecular beam epitaxy | Roughening | Polarity | Epitaxial growth | Aluminum nitride
Journal Article
Journal of crystal growth, ISSN 0022-0248, 01/2018, Volume 481, pp. 7 - 10
B2. Semiconducting gallium arsenide | A1. Atomic force microscopy | A1. Surface processes | A3. Molecular beam epitaxy | A1. Diffusion | A1. Nucleation | A1. Recrystallization | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Atomic force microscopy | Annealing | Gallium arsenide | Epitaxy | Electric properties | Arsenic compounds | Studies | Scanning electron microscopy | Electrical properties | Molecular beam epitaxy | Surface roughness | Epitaxial growth | Electron microscopy | Substrates
Journal Article
Applied physics letters, ISSN 0003-6951, 06/2015, Volume 106, Issue 23, p. 232106
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Molecular Beam Epitaxy
: Materials and Applications for Electronics and Optoelectronics
2019, 1, Wiley Series in Materials for Electronic & Optoelectronic Applications, ISBN 111935501X, 512
eBook
Nanotechnology, ISSN 0957-4484, 2/2013, Volume 24, Issue 8
Physical Sciences | Materials Science | Nanoscience & Nanotechnology | Technology | Materials Science, Multidisciplinary | Science & Technology - Other Topics | Physics | Science & Technology | Physics, Applied | Quantum wires | Exact sciences and technology | Methods of nanofabrication | Materials science | Methods of deposition of films and coatings; film growth and epitaxy | Nanoscale materials and structures: fabrication and characterization | Molecular, atomic, ion, and chemical beam epitaxy | Cross-disciplinary physics: materials science; rheology | Chemical synthesis methods
Journal Article
Journal of crystal growth, ISSN 0022-0248, 02/2019, Volume 507, pp. 65 - 69
B3. Light emitting diodes | A3. Molecular beam epitaxy | B1. Nitrides | B2. Semiconducting III–V materials | A1. Nanostructures | A1. Substrates | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Aluminum | Emission | Silicon substrates | Light emitting diodes | Dislocations | Ultraviolet radiation | Molecular beam epitaxy | Organic light emitting diodes | Pressure ratio | Epitaxial growth | Nanowires | Emitters | Structural analysis
Journal Article
Journal of applied physics, ISSN 0021-8979, 03/2016, Volume 119, Issue 9, p. 95702
Physical Sciences | Physics | Science & Technology | Physics, Applied | Usage | Indium | Structure | Electron microscopy | Optical properties | Organic chemistry | Image analysis | Microscopy | Superlattices | Skewed distributions | Molecular beam epitaxy | Antimony | Chemical diffusion | Epitaxial growth | Electron energy | Electron energy loss spectroscopy
Journal Article
CrystEngComm, ISSN 1466-8033, 6/2018, Volume 2, Issue 24, pp. 337 - 338
Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Crystallography | Science & Technology | Interlayers | Wurtzite | Gallium nitrides | Silicon nitride | Nanostructure | Density | Molecular chains | Transmission electron microscopy | Molecular beam epitaxy | Molecular beams | Epitaxial growth | Nanowires | Nanorods
Journal Article
Journal of crystal growth, ISSN 0022-0248, 02/2019, Volume 507, pp. 163 - 167
B1. Mn4N | B1. Ni4N | A3. Molecular beam epitaxy | B1. MgO | A1. Crystal structure | B2. Magnetic materials | B1. Ni | B1. Mn | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Memory devices | Nickel base alloys | Electron diffraction | Materials substitution | Domain walls | Magnesium oxide | X-ray diffraction | Decomposition | Magnetic saturation | High energy electrons | Lattice parameters | Substrates | Thin films | X ray reflection | Magnetic anisotropy | Molecular beam epitaxy | Magnetism | Epitaxial growth | Crystal structure | Magnetic properties | Manganese
Journal Article
Journal of crystal growth, ISSN 0022-0248, 03/2019, Volume 510, pp. 56 - 64
Nanostructures | A3. Molecular beam epitaxy | B1. Nitrides | A1. Crystal morphology | B2. Semiconducting III-V materials | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Nitrides | Structure | Indium | Epitaxy | Crystals | Buffer layers | Self assembly | Scanning electron microscopy | Wurtzite | Silicon substrates | Transmission electron microscopy | Microscopy | Molecular beam epitaxy | Epitaxial growth | Nanowires | Indium oxides | Scanning transmission electron microscopy | Crystal structure
Journal Article
Journal of applied physics, ISSN 0021-8979, 06/2019, Volume 125, Issue 21, p. 215109
Journal Article
Journal of crystal growth, ISSN 0022-0248, 10/2019, Volume 524, p. 125181
B1. InGaN quantum dot | B1. GaN nanowires | A3. Selective area growth | A3. Molecular beam epitaxy | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Crystallography | Physics | Science & Technology | Physics, Applied | Buffer layers | Gallium nitrides | Quantum dots | Silicon substrates | Selectivity | Masks | Indium gallium nitrides | Molecular beam epitaxy | Titanium | Epitaxial growth | Nanowires | Critical temperature | Radio frequency plasma | Embedded structures
Journal Article