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2015, 1st edition., ISBN 9780199695829, xii, 516
A unique description of the historical development of semiconductor devices and their application to human needs. It provides a brief overview of the whole... 
Molecular beam epitaxy
Book
Nature materials, ISSN 1476-4660, 01/2015, Volume 14, Issue 4, pp. 400 - 406
.... Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting... 
Physical Sciences | Chemistry | Materials Science | Technology | Materials Science, Multidisciplinary | Physics, Condensed Matter | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Superconductors | Semiconductors | Superconductivity | Electronics | Nanostructure | Epitaxial growth | Nanowires | Devices
Journal Article
CrystEngComm, ISSN 1466-8033, 2018, Volume 20, Issue 24, pp. 3370 - 3380
.... In this report, we demonstrate that the use of a GaN seeding layer prepared by droplet epitaxy prior to the growth of epitaxial GaN on Si (111... 
Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Crystallography | Science & Technology | Interlayers | Wurtzite | Gallium nitrides | Silicon nitride | Nanostructure | Density | Molecular chains | Transmission electron microscopy | Molecular beam epitaxy | Molecular beams | Epitaxial growth | Nanowires | Nanorods
Journal Article
Journal of crystal growth, ISSN 0022-0248, 02/2016, Volume 435, pp. 56 - 61
GaSb p-i-n photodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution... 
A1 Atomic force microscopy | A1 Defects | A3 Molecular beam epitaxy | A1 High-resolution X-ray diffraction | B1 Antimonides | A1 Interfaces
Journal Article
Journal of crystal growth, ISSN 0022-0248, 10/2017, Volume 476, pp. 58 - 63
...) substrate by gas source molecular beam epitaxy with ammonia as nitrogen precursor in the high temperature range... 
Ammonia molecular beam epitaxy | A3. Molecular beam epitaxy | AlN on silicon | A1. Reflection high energy electron diffraction | B1. Nitrides | Aluminum compounds | Ammonia | Epitaxy | Atomic force microscopy | Nitrides
Journal Article
2019, 1, Wiley Series in Materials for Electronic & Optoelectronic Applications, ISBN 111935501X, 512
... for MBE</b> <p>Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy &#40;MBE&#41... 
Components, Circuits, Devices and Systems | Computing and Processing | Fields, Waves and Electromagnetics | Photonics and Electrooptics | Power, Energy and Industry Applications | Crystal growth | Molecular beam epitaxy | Epitaxy | Electronics | Optoelectronics
eBook
Applied physics letters, ISSN 1077-3118, 11/2014, Volume 105, Issue 20, p. 202113
Journal Article
2012, ISBN 012387839X, 745
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates... 
Optoelectronic devices - Materials | Molecular beam epitaxy | Optoelectronic devices-Materials | Semiconductors-Materials | Semiconductors | Optoelectronic devices | Materials
eBook
Journal of crystal growth, ISSN 0022-0248, 04/2019, Volume 512, pp. 164 - 168
Journal Article
05/2018, ISBN 1315897520, Volume II, 293
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation.... 
Crystal growth | Molecular beam epitaxy | Silicon crystals
eBook