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Nature Nanotechnology, ISSN 1748-3387, 2014, Volume 9, Issue 5, pp. 372 - 377
Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new... 
AUGMENTED-WAVE METHOD | SINGLE-CRYSTALS | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOS2 TRANSISTORS | HIGH-PRESSURES | NANOSCIENCE & NANOTECHNOLOGY | ELECTRONIC-STRUCTURE | Semiconductor devices | Field effect transistors | Drains | Crystals | Electronics | Phosphorus | Nanostructure | Two dimensional | Physics - Materials Science
Journal Article
ACS Nano, ISSN 1936-0851, 06/2014, Volume 8, Issue 6, pp. 5911 - 5920
Here we report the properties of field-effect transistors based on a few layers of chemical vapor transport grown α-MoTe2 crystals mechanically exfoliated onto... 
carrier mobility | field-effect transistors | transition metal dichalcogenides | Raman scattering | two-dimensional atomic layers | STATES | MOS2 | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | TRANSITION | RAMAN-SCATTERING | TRANSPORT | MONOLAYER | EMISSION
Journal Article
Nano Letters, ISSN 1530-6984, 09/2011, Volume 11, Issue 9, pp. 3768 - 3773
Monolayer molybdenum disulfide (MoS2), unlike its bulk form, is a direct band gap semiconductor with a band gap of 1.8 eV. Recently, field-effect transistors... 
Molybdenum disulfide (MoS | NEGF | quantum transport | field-effect transistor | layered materials | device physics | PHYSICS, CONDENSED MATTER | Molybdenum disulfide (MoS2) | ELECTRON | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
Advanced Materials, ISSN 0935-9648, 05/2018, Volume 30, Issue 18, pp. 1870129 - n/a
A simple contact‐engineering method, which introduces chemically adsorbed thiol‐molecules as thin tunneling barriers between the metal electrodes and MoS2... 
charge injection | contact engineering | MoS2 | thiol‐molecules | electrical transport | Circuit components | Thiols | Field-effect transistors | Analysis | Electric properties
Journal Article
ACS Nano, ISSN 1936-0851, 10/2011, Volume 5, Issue 10, pp. 7707 - 7712
We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS2 films,... 
localization | MoS | dichalcogenides | Mott variable range hopping | resonant tunneling | field-effect transistor | charge impurity scattering | MoS2 | MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | DENSITY
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 11/2014, Volume 24, Issue 44, pp. 7025 - 7031
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 07/2015, Volume 25, Issue 26, pp. 4076 - 4082
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 04/2019, Volume 29, Issue 17, pp. 1970113 - n/a
In article number 1807893, Shaozhi Deng and co‐workers present a study of Van der Waals bipolar junction transistors based on vertically stacked 2D materials... 
vertical stacking | gas sensor | van der Waals force | bipolar junction transistor | MoS2/WSe2/MoS2 heterostructure | Circuit components | Transistors | Junction transistors | Molybdenum disulfide | Semiconductor devices | Power amplifiers | Atomic properties | Two dimensional materials | Gas sensors | Heterostructures
Journal Article
Nature Nanotechnology, ISSN 1748-3387, 03/2019, Volume 14, Issue 3, pp. 223 - 226
Journal Article
Nature Materials, ISSN 1476-1122, 08/2014, Volume 13, Issue 12, pp. 1128 - 1134
Journal Article
Journal Article
ACS Nano, ISSN 1936-0851, 11/2012, Volume 6, Issue 11, pp. 10070 - 10075
Journal Article