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IEEE electron device letters, ISSN 0741-3106, 04/2012, Volume 33, Issue 4, pp. 546 - 548
Journal Article
Applied physics letters, ISSN 1077-3118, 2010, Volume 96, Issue 7, pp. 073510 - 073510-3
The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or... 
MOSFET | TRIGATE SOI MOSFETS | UNIVERSALITY | electric fields | PHYSICS, APPLIED | INVERSION LAYER MOBILITY | SILICON | CMOS integrated circuits | SI MOSFETS
Journal Article
Applied physics letters, ISSN 1077-3118, 2008, Volume 92, Issue 19, pp. 193504 - 193504-3
We demonstrate the implementation of tunneling field-effect transistors (TFETs) based on silicon nanowires (NWs) that were grown using the vapor-liquid-solid... 
MOSFET | PHYSICS, APPLIED
Journal Article
Applied physics letters, ISSN 1077-3118, 2009, Volume 94, Issue 5, pp. 053511 - 053511-2
This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and... 
p-n junctions | semiconductor doping | MOSFET | PHYSICS, APPLIED | ACCUMULATION-MODE | field effect transistors | GATE | MOSFETS
Journal Article
Materials science forum, ISSN 0255-5476, 07/2020, Volume 1004, pp. 758 - 763
A 0.63 mΩcm2 / 1170 V property was demonstrated in a 4H-SiC V-groove trench MOSFET with a super junction (SJ) structure. Successful results in SJ-VMOSFETs will... 
MOSFETs
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 680 - 683
A new class of power MOSFET, the vertical tri-gate MOSFET, is described and analyzed. The structure can reduce the 4H-SiC MOS channel resistance by up to an... 
Trench MOSFET | 3G-MOSFET | Fin-FET | MOSFETs
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2017, Volume 111, Issue 9, p. 92102
We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | MOSFETS
Journal Article
Microelectronic engineering, ISSN 0167-9317, 09/2013, Volume 109, pp. 326 - 329
•Mobility in highly doped junctionless trigate MOSFETs is experimentally studied.•Mobility enhancement in narrow nanowire versus wide devices is... 
Mobility | Multi-gate MOSFET | Junctionless MOSFET | Heavily doped MOSFET | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | Junction less MOSFET | ENGINEERING, ELECTRICAL & ELECTRONIC | Doping | Electron mobility | Silicon | Nanowires | Film thickness | Devices | Carrier mobility | MOSFETs
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2016, Volume 120, Issue 13, p. 135303
The electrical and chemical stability of Mo-InGaAs films for source-drain applications in transistor structures has been investigated. It was found that for 5... 
MOSFET | PHYSICS, APPLIED
Journal Article
IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, 09/2016, Volume 4, Issue 3, pp. 978 - 987
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
We present a comparative study of the electrical characteristics of different 1200 V commercial SiC power MOSFETs at cryogenic temperatures down to 77 K. As... 
MOSFET | Temperature | Silicon carbide | Cryogenics | Logic gates | power MOSFET | Capacitance | Silicon | SiC MOSFET. Cryogenic | Power MOSFET
Conference Proceeding
Jpn J Appl Phys, ISSN 0021-4922, 6/2012, Volume 51, Issue 6, pp. 06FE09 - 06FE09-4
In this work, novel L-shaped tunneling field-effect transistors (TFETs) have been proposed. The proposed L-shaped TFETs feature higher on-current... 
MOSFET | PHYSICS, APPLIED
Journal Article
IEEE electron device letters, ISSN 1558-0563, 2017, Volume 38, Issue 3, pp. 353 - 355
In this letter, we report on high breakdown voltage in situ oxide, GaN interlayer-based vertical trench MOSFETs (OG-FETs) on bulk GaN substrates. Following our... 
MOSFET | Electric breakdown | GaN | breakdown voltage | vertical MOSFET | Logic gates | trench MOSFET | GaN trench MOSFET | low on-resistance | Gallium nitride | MOCVD | Substrates | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 756 - 760
1200V SiC power MOSFETs of various cell geometries are modeled in Synopsis Inc. Sentaurus TCAD. The impact of cell geometry on switching loss is studied by... 
Cell geometry | Switching loss | SiC MOSFET | Plasma | MOSFETs
Journal Article
Applied physics letters, ISSN 0003-6951, 09/2013, Volume 103, Issue 13, p. 133503
The temperature-dependent performance, including drain current (I-d) and gate capacitance (C-gg) of multi-gate junctionless (JL) bulk transistor for... 
MOSFET | PHYSICS, APPLIED | PERFORMANCE
Journal Article
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