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Materials science forum, ISSN 1662-9752, 07/2020, Volume 1004, pp. 758 - 763
A 0.63 mΩcm2 / 1170 V property was demonstrated in a 4H-SiC V-groove trench MOSFET with a super junction (SJ) structure. Successful results in SJ-VMOSFETs will... 
MOSFETs
Journal Article
Applied physics letters, ISSN 1077-3118, 2010, Volume 96, Issue 7, pp. 073510 - 073510-3
The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or... 
MOSFET | TRIGATE SOI MOSFETS | UNIVERSALITY | electric fields | PHYSICS, APPLIED | INVERSION LAYER MOBILITY | SILICON | CMOS integrated circuits | SI MOSFETS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2017, Volume 111, Issue 9, p. 92102
We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | MOSFETS
Journal Article
Applied physics letters, ISSN 1077-3118, 2009, Volume 94, Issue 5, pp. 053511 - 053511-2
This paper describes a metal-oxide-semiconductor (MOS) transistor concept in which there are no junctions. The channel doping is equal in concentration and... 
p-n junctions | semiconductor doping | MOSFET | PHYSICS, APPLIED | ACCUMULATION-MODE | field effect transistors | GATE | MOSFETS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2012, Volume 33, Issue 4, pp. 546 - 548
Journal Article
IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, 09/2016, Volume 4, Issue 3, pp. 978 - 987
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 680 - 683
A new class of power MOSFET, the vertical tri-gate MOSFET, is described and analyzed. The structure can reduce the 4H-SiC MOS channel resistance by up to an... 
Trench MOSFET | 3G-MOSFET | Fin-FET | MOSFETs
Journal Article
Applied physics letters, ISSN 1077-3118, 2008, Volume 92, Issue 19, pp. 193504 - 193504-3
We demonstrate the implementation of tunneling field-effect transistors (TFETs) based on silicon nanowires (NWs) that were grown using the vapor-liquid-solid... 
MOSFET | PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2011, Volume 99, Issue 1, pp. 012106 - 012106-3
This paper investigates the channel hot carrier stress (CHCS) effects on gate-induced drain leakage (GIDL) current in high-k/metal-gate n-type... 
PHYSICS, APPLIED | MOSFETS
Journal Article
Applied physics letters, ISSN 1077-3118, 2006, Volume 89, Issue 25, pp. 252110 - 252110-3
The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function indicating strong Fermi-level pinning close to the Bardeen... 
PHYSICS, APPLIED | GATE | SCHOTTKY BARRIERS | MOSFETS | BAND OFFSETS | GAP
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2011, Volume 110, Issue 1, p. 14503
InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole... 
TRANSPORT | PHYSICS, APPLIED | WELL | MOSFETS
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 09/2013, Volume 109, pp. 326 - 329
•Mobility in highly doped junctionless trigate MOSFETs is experimentally studied.•Mobility enhancement in narrow nanowire versus wide devices is... 
Mobility | Multi-gate MOSFET | Junctionless MOSFET | Heavily doped MOSFET | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | Junction less MOSFET | ENGINEERING, ELECTRICAL & ELECTRONIC | Doping | Electron mobility | Silicon | Nanowires | Film thickness | Devices | Carrier mobility | MOSFETs
Journal Article
Applied physics letters, ISSN 1077-3118, 2010, Volume 96, Issue 10, pp. 102106 - 102106-3
The improvement of subthreshold slope due to impact ionization is compared between "standard" inversion-mode multigate silicon nanowire transistors and... 
IMPACT IONIZATION | PHYSICS, APPLIED | SILICON
Journal Article
Applied physics letters, ISSN 1077-3118, 2011, Volume 99, Issue 3, pp. 033507 - 033507-3
Improved device performance of InGaAs channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been achieved by utilizing InP and InAlAs... 
PHYSICS, APPLIED | MOSFETS
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 756 - 760
1200V SiC power MOSFETs of various cell geometries are modeled in Synopsis Inc. Sentaurus TCAD. The impact of cell geometry on switching loss is studied by... 
Cell geometry | Switching loss | SiC MOSFET | Plasma | MOSFETs
Journal Article
Applied Physics Express, ISSN 1882-0778, 7/2012, Volume 5, Issue 7, pp. 076501 - 076501-3
We demonstrated the integration of high-mobility channel InGaAs n-channel and Ge p-channel metal--oxide--semiconductor field-effect transistors (nMOSFETs and... 
PHYSICS, APPLIED | MOSFETS
Journal Article
Proceedings of the IEEE, ISSN 0018-9219, 12/2010, Volume 98, Issue 12, pp. 2095 - 2110
Journal Article
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