UofT Libraries is getting a new library services platform in January 2021.
Learn more about the change.
Search Articles
Materials science forum, ISSN 0255-5476, 07/2020, Volume 1004, pp. 758 - 763
Journal Article
Materials science forum, ISSN 0255-5476, 07/2020, Volume 1004, pp. 882 - 888
Journal Article
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 06/2016, Volume 63, Issue 6, pp. 2306 - 2312
Semiconductor device modeling | ultrathin-body MOSFETs | MOSFET | Correlation | Scattering | Mobility | multigate MOSFETs | Silicon | Dielectrics | surface roughness (SR) scattering | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Atomic force microscopy | Computer simulation | Quantum wells | Surface roughness | Devices | MOSFETs
Journal Article
Applied physics letters, ISSN 0003-6951, 06/2020, Volume 116, Issue 26, p. 269901
Journal Article
Applied physics letters, ISSN 0003-6951, 02/2010, Volume 96, Issue 7, pp. 073510 - 073510-3
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 07/2017, Volume 56, Issue 7, p. 079201
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 07/2017, Volume 56, Issue 7, p. 079201
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 09/2017, Volume 64, Issue 9, pp. 3808 - 3815
Performance evaluation | MOSFET | thermionic and tunneling current | IV MOSFET | Photonic band gap | liquid-nitrogen regime | Iron | III–V MOSFET | schottky barrier (SB) | Tunneling | field emission (FE) | Effective mass | thermionic emission (TE) | Device modeling | double-gate (DG) MOSFET | III-V MOSFET | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | MOSFETs | Cryogenics
Journal Article
IEEE transactions on industry applications, ISSN 0093-9994, 01/2019, Volume 55, Issue 1, pp. 600 - 609
Temperature measurement | MOSFET | Silicon carbide | gate leakage current | Aging | MOSFET circuits | Logic gates | mosfet">silicon carbide (SiC) mosfet | gate oxide | Reliability | Aging detection | silicon carbide (SiC) mosfet | reliability | Power converters | Precursors | Current leakage | Accelerated tests | Leakage current | Accelerated aging tests | MOSFETs | Gates
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 680 - 683
Journal Article
Materials science forum, ISSN 0255-5476, 05/2019, Volume 954, pp. 90 - 98
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 01/2019, Volume 66, Issue 1, pp. 308 - 315
MOSFET | radiation hardening | total ionizing dose (TID) | Doping | Logic gates | MOSFET circuits | Leakage currents | Layout modification | Substrates | silicon-on-insulator (SOI) | metal–oxide–semiconductor field-effect transistor (MOSFET) | metal-oxide-semiconductor field-effect transistor (MOSFET) | Gamma rays | Radiation effects | Semiconductor devices | Field effect transistors | Silicon substrates | N-type semiconductors | Leakage current | Foundries | Exposure | Gating and risering | MOSFETs
Journal Article
AIP conference proceedings, ISSN 0094-243X, 11/2019, Volume 2173, Issue 1
Journal Article
IEEE electron device letters, ISSN 0741-3106, 09/2019, Volume 40, Issue 9, pp. 1362 - 1365
Journal Article
International journal of photoenergy, ISSN 1110-662X, 8/2020, Volume 2020, pp. 1 - 2
Journal Article
IEEE electron device letters, ISSN 0741-3106, 10/2018, Volume 39, Issue 10, pp. 1572 - 1575
Radio frequency | Temperature measurement | Performance evaluation | MOSFET | Pulse measurements | Ga₂O₃ MOSFET | power added efficiency (PAE) | pulsed IV | Logic gates | large signal RF | pulsed RF | Gain | MOSFET, large signal RF, pulsed RF, power added efficiency (PAE), pulsed IV | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Gallium oxides | Heating | Energy dissipation | Power efficiency | Performance degradation | MOSFETs | Thermal simulation
Journal Article
Electronics letters, ISSN 0013-5194, 11/2020, Volume 56, Issue 23, pp. 1273 - 1275
Semiconductor technology | voltage 800.0 V | gate oxide interface | planar power MOSFET | ion implantation | partially widened retrograde P‐well structure | SiC | voltage 1.2 kV | shielding effect | standard planar MOSFET manufacture process | short circuit ability | N‐implanting region | semiconductor device models | fabrication technology | peak electric field | power MOSFET | semiconductor device reliability | semiconductor device manufacture | SC saturation current | additional implanting steps | silicon compounds | reliability enhanced MOSFET | wide band gap semiconductors | RP structure | MOSFET structure | gate oxide reliability | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 03/2014, Volume 61, Issue 3, pp. 926 - 929
Semiconductor device modeling | natural length | MOSFET | equivalent number of gates (ENGs) | Logic gates | Cylindrical-shaped omega-gate ({\rm C}\Omega{\rm G}) MOSFETs | Threshold voltage | Mathematical model | rectangular-shaped Omega{\rm G}~({\rm R}\Omega{\rm G}) MOSFETs | Equations | oxide-to-gate underlap coverage factor (OUCF) | rectangular-shaped ΩG(R:G) MOSFETs | Cylindrical-shaped omega-gate C G) MOSFETs | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Metal oxide semiconductor field effect transistors | Usage | Numerical analysis | Scalability | Analysis | Innovations | Gates (Electronics) | Least squares | Depletion | Equivalence | Mathematical models | Devices | Cross sections | Channels | MOSFETs | Gates
Journal Article
IEEE electron device letters, ISSN 0741-3106, 09/2018, Volume 39, Issue 9, pp. 1385 - 1388
MOSFET | Voltage measurement | Electric breakdown | Fluorinert | air breakdown | Doping | power MOSFET | SOG doping | Semiconductor device measurement | spin-on-glass | Logic gates | gallium oxide | Electric fields | Field plate | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Organic chemistry | Electric potential | Gallium oxides | Breakdown | Chemical vapor deposition | Repair & maintenance | MOSFETs | Silicon dioxide | Electric field strength
Journal Article
No results were found for your search.
Cannot display more than 1000 results, please narrow the terms of your search.