Articles

Search Articles

Advanced search
Help

Catalogue

Articles

Databases

X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (30465) 30465
Conference Proceeding (27692) 27692
Publication (1362) 1362
Dissertation (586) 586
Book Chapter (447) 447
Magazine Article (107) 107
Newspaper Article (87) 87
Government Document (74) 74
Book / eBook (72) 72
Paper (42) 42
Book Review (35) 35
Trade Publication Article (28) 28
Reference (27) 27
Newsletter (8) 8
Technical Report (4) 4
Web Resource (2) 2
Poster (1) 1
Standard (1) 1
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
mosfets (26580) 26580
mosfet (15476) 15476
engineering, electrical & electronic (14655) 14655
mosfet circuits (11156) 11156
physics, applied (10432) 10432
silicon (8144) 8144
voltage (7930) 7930
threshold voltage (7085) 7085
logic gates (6974) 6974
devices (5409) 5409
mos-fet (5136) 5136
transistors (5001) 5001
cmos technology (4906) 4906
switches (4429) 4429
degradation (4053) 4053
capacitance (3480) 3480
metal oxide semiconductor field effect transistors (3365) 3365
circuits (3253) 3253
cmos (3030) 3030
semiconductor devices (3001) 3001
mos devices (2927) 2927
silicon carbide (2901) 2901
analysis (2896) 2896
gates (2895) 2895
semiconductor device modeling (2844) 2844
electric potential (2836) 2836
physics, condensed matter (2703) 2703
circuit simulation (2513) 2513
stress (2494) 2494
temperature (2472) 2472
capacitors (2398) 2398
simulation (2363) 2363
doping (2361) 2361
research (2311) 2311
leakage current (2274) 2274
power mosfet (2108) 2108
transconductance (2085) 2085
inverters (2035) 2035
channels (2018) 2018
mathematical models (2005) 2005
usage (2002) 2002
materials science, multidisciplinary (1984) 1984
fabrication (1945) 1945
substrates (1940) 1940
current measurement (1900) 1900
computer simulation (1853) 1853
nanoscience & nanotechnology (1804) 1804
cmos process (1762) 1762
annealing (1751) 1751
fets (1734) 1734
analytical models (1681) 1681
radio frequency (1668) 1668
voltage control (1647) 1647
tunneling (1642) 1642
field-effect transistors (1598) 1598
mobility (1561) 1561
integrated circuit modeling (1542) 1542
hot carriers (1535) 1535
low voltage (1512) 1512
dielectrics (1490) 1490
microelectronics (1472) 1472
model (1471) 1471
integrated circuits (1439) 1439
inductors (1426) 1426
reliability (1424) 1424
electrons (1418) 1418
frequency (1404) 1404
electronics (1383) 1383
very large scale integration (1362) 1362
semiconductors (1359) 1359
performance (1357) 1357
mathematical model (1352) 1352
oxides (1338) 1338
equations (1332) 1332
cmos integrated circuits (1330) 1330
resistors (1326) 1326
silicon on insulator technology (1323) 1323
design (1319) 1319
electrodes (1314) 1314
drains (1311) 1311
diodes (1272) 1272
random access memory (1270) 1270
testing (1224) 1224
field effect transistors (1220) 1220
noise (1215) 1215
insulated gate bipolar transistors (1208) 1208
electric properties (1205) 1205
power supplies (1185) 1185
performance evaluation (1181) 1181
design and construction (1180) 1180
silicium (1167) 1167
switching circuits (1163) 1163
laboratories (1148) 1148
transistor (1145) 1145
implants (1138) 1138
mathematical analysis (1138) 1138
oxidation (1128) 1128
schwellenspannung (1108) 1108
electron mobility (1087) 1087
resistance (1086) 1086
more...
Library Location Library Location
Library Location Library Location
X
Sort by Item Count (A-Z)
Filter by Count
Engineering & Comp. Sci. - Stacks (39) 39
Collection Dvlpm't (Acquisitions) - Vendor file (11) 11
Collection Dvlpm't (Acquisitions) - Closed Orders (4) 4
Online Resources - Online (3) 3
Engineering & Comp. Sci. - Missing (2) 2
Engineering & Comp. Sci. - Searching (1) 1
Gerstein Science - Stacks (1) 1
UTL at Downsview - May be requested (1) 1
more...
Language Language
Language Language
X
Sort by Item Count (A-Z)
Filter by Count
English (55036) 55036
Chinese (796) 796
Japanese (576) 576
Korean (74) 74
French (69) 69
Polish (41) 41
Portuguese (22) 22
Spanish (15) 15
German (12) 12
Russian (11) 11
Ukrainian (9) 9
Croatian (4) 4
Swedish (4) 4
Slovenian (2) 2
Dutch (1) 1
Hungarian (1) 1
Indonesian (1) 1
Persian (1) 1
more...
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


1. Full Text Reduced electric field in junctionless transistors
by Colinge, Jean-Pierre and Lee, Chi-Woo and Ferain, Isabelle and Akhavan, Nima Dehdashti and Yan, Ran and Razavi, Pedram and Yu, Ran and Nazarov, Alexei N and Doria, Rodrigo T
Applied Physics Letters, ISSN 0003-6951, 02/2010, Volume 96, Issue 7, pp. 073510 - 073510-3
The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or... 
MOSFET | TRIGATE SOI MOSFETS | UNIVERSALITY | electric fields | PHYSICS, APPLIED | INVERSION LAYER MOBILITY | SILICON | CMOS integrated circuits | SI MOSFETS
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
2. Full Text 7.6V threshold voltage high-performance normally-off Al2O3/GaN MOSFET achieved by interface charge engineering
by Zhou, Qi and Liu, Li and Zhang, Anbang and Chen, Bowen and Jin, Yang and Shi, Yuanyuan and Wang, Zeheng and Chen, Wanjun and Zhang, Bo
IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 165 - 168
GaN | MOSFETs | AlGaN/GaN
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
3. Full Text A Novel Scaling Theory for Fully Depleted Omega-Gate MOSFETs Included With Equivalent Number of Gates
by Te-Kuang Chiang
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2014, Volume 61, Issue 3, pp. 926 - 929
A novel scaling theory for fully depleted omega-gate (ΩG) MOSFETs, including rectangular-shaped ΩG (RΩG) and cylindrical-shaped ΩG (CΩG) MOSFETs, is presented.... 
Semiconductor device modeling | natural length | MOSFET | equivalent number of gates (ENGs) | Logic gates | Cylindrical-shaped omega-gate ({\rm C}\Omega{\rm G}) MOSFETs | Threshold voltage | Mathematical model | rectangular-shaped Omega{\rm G}~({\rm R}\Omega{\rm G}) MOSFETs | Equations | oxide-to-gate underlap coverage factor (OUCF) | rectangular-shaped ΩG(R:G) MOSFETs | Cylindrical-shaped omega-gate C G) MOSFETs | THRESHOLD VOLTAGE MODEL | PHYSICS, APPLIED | rectangular-shaped Omega G (R Omega G) MOSFETs | Cylindrical-shaped omega-gate (C Omega G) MOSFETs | ENGINEERING, ELECTRICAL & ELECTRONIC | Metal oxide semiconductor field effect transistors | Usage | Numerical analysis | Scalability | Analysis | Innovations | Gates (Electronics) | Least squares | Depletion | Equivalence | Mathematical models | Devices | Cross sections | Channels | MOSFETs | Gates
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
4. Full Text Modeling of DG MOSFET v characteristics in the saturation region
by Taur, Yuan and Lin, Huang-Hsuan
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2018, Volume 65, Issue 5, pp. 1714 - 1720
MOSFET saturation | MOSFET model
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
5. Full Text 1230 V beta-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 mu A/cm(2)
by Li, WS and Hu, ZY and Nomoto, K and Zhang, ZX and Hsu, JY and Thieu, QT and Sasaki, K and Kuramata, A and Jena, D and Xing, HG
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 11/2018, Volume 113, Issue 20
beta-Ga2O3 vertical trench Schottky barrier diodes (SBDs) are realized, demonstrating superior reverse blocking characteristics than the co-fabricated regular... 
PHYSICS, APPLIED | MOSFETS
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
6. Full Text Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature
by Kumar, Ajay and Tripathi, M. M and Chaujar, Rishu
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2018, Volume 65, Issue 3, pp. 860 - 866
In this paper, reliability issues of In 2 O 5 Sn (indium-tin oxide: a transparent material) transparent gate recessed channel (TGRC)-MOSFET has been analyzed... 
MOSFET | Electron traps | Electric potential | interface trap charges | transparent gate recessed channel (TGRC)-MOSFET | Logic gates | Conventional recesses channel (CRC)-MOSFET | indium tin oxide (ITO) | temperature | Energy states | Picture archiving and communication systems | Reliability | PHYSICS, APPLIED | SOI MOSFETS | PERFORMANCE | TGRC-MOSFET | ENGINEERING, ELECTRICAL & ELECTRONIC | HARMONIC DISTORTION | IMPROVED ANALOG | DEGRADATION | STRESS | THRESHOLD VOLTAGE | DEPTH | N-MOSFETS
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
7. Full Text β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
by Zhou, Hong and Maize, Kerry and Qiu, Gang and Shakouri, Ali and Ye, Peide D
Applied Physics Letters, ISSN 0003-6951, 08/2017, Volume 111, Issue 9, p. 92102
We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | MOSFETS
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
8. Full Text An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs
by Badami, Oves and Caruso, Enrico and Lizzit, Daniel and Osgnach, Patrik and Esseni, David and Palestri, Pierpaolo and Selmi, Luca
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2016, Volume 63, Issue 6, pp. 2306 - 2312
This paper reports about the implementation in a multisubband Monte Carlo device simulator of a comprehensive surface roughness scattering model, based on a... 
Semiconductor device modeling | ultrathin-body MOSFETs | MOSFET | Correlation | Scattering | Mobility | multigate MOSFETs | Silicon | Dielectrics | surface roughness (SR) scattering | MONTE-CARLO | PHYSICS, APPLIED | INVERSION LAYER MOBILITY | BENCHMARKING | INAS | ELECTRON-TRANSPORT | ENGINEERING, ELECTRICAL & ELECTRONIC | Atomic force microscopy | Computer simulation | Quantum wells | Surface roughness | Devices | MOSFETs
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
9. Full Text Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs
by Gurpinar, Emre and Castellazzi, Alberto
IEEE Transactions on Power Electronics, ISSN 0885-8993, 10/2016, Volume 31, Issue 10, pp. 7148 - 7160
In this paper, benchmark of Si IGBT, SiC MOSFET, and Gallium nitride (GaN) HEMT power switches at 600-V class is conducted in single-phase T-type inverter.... 
MOSFET | Multilevel systems | Inverters | Power electronics | Power conversion | Gallium nitride | MODFETs | Silicon carbide | Power MOSFETs | HEMTs | Power Semiconductor Switches | Silicon | Insulated Gate Bipolar Transistors | Insulated gate bipolar transistors (IGBTs) | power metaloxide semiconductor field-effect transistors (MOSFETs) | DESIGN | TEMPERATURE | inverters | power conversion | ELIMINATION | multilevel systems | FAULT | power electronics | power semiconductor switches | ENGINEERING, ELECTRICAL & ELECTRONIC | High-electron-mobility transistors | Electric inverters | Research | Gallium compounds | Optical properties | Gallium nitrides | Devices | Heat sinks | Switching | Gates
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
10. Junctionless tri-gate InGaAs MOSFETs
by Cezar B Zota and Mattias Borg and Lars-Erik Wernersson and Erik Lind
Japanese Journal of Applied Physics, ISSN 0021-4922, 12/2017, Volume 56, Issue 12, p. 120306
We demonstrate and characterize junctionless tri-gate InGaAs MOSFETs, fabricated using a simplified process with gate lengths down to Lg = 25 nm at a nanowire... 
Nanowires | MOSFETs
Journal Article
Details down arrow
11. Full Text In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates
by Gupta, Chirag and Lund, Cory and Chan, Silvia H and Agarwal, Anchal and Junquian Liu and Enatsu, Yuuki and Keller, Stacia and Mishra, Umesh K
IEEE Electron Device Letters, ISSN 0741-3106, 03/2017, Volume 38, Issue 3, pp. 353 - 355
In this letter, we report on high breakdown voltage in situ oxide, GaN interlayer-based vertical trench MOSFETs (OG-FETs) on bulk GaN substrates. Following our... 
MOSFET | Electric breakdown | GaN | breakdown voltage | vertical MOSFET | Logic gates | trench MOSFET | GaN trench MOSFET | low on-resistance | Gallium nitride | MOCVD | Substrates | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
12. Retraction: "Effects of high-temperature diluted-H2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO^sub 2^"
by Hirohisa Hirai and Koji Kita
Japanese Journal of Applied Physics, ISSN 0021-4922, 07/2017, Volume 56, Issue 7, p. 079201
Dilution | MOSFETs
Journal Article
Details down arrow
13. Retraction: "Effects of high-temperature diluted-H^sub 2^ annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO^sub 2^"
by Hirohisa Hirai and Koji Kita
Japanese Journal of Applied Physics, ISSN 0021-4922, 07/2017, Volume 56, Issue 7, p. 079201
Dilution | MOSFETs
Journal Article
Details down arrow
14. Full Text Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy
by Wen, Wei-Chen and Yamamoto, Keisuke and Wang, Dong and Nakashima, Hiroshi
Journal of Applied Physics, ISSN 0021-8979, 11/2018, Volume 124, Issue 20, p. 205303
A border trap (BT) evaluation method was established for SiO2/GeO2/Ge gate stacks by using deep-level transient spectroscopy with a lock-in integrator. Ge... 
MOBILITY | PHYSICS, APPLIED | MOSFETS
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
15. Full Text Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
by Zhang, R and Iwasaki, T and Taoka, N and Takenaka, M and Takagi, S
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 03/2011, Volume 98, Issue 11, p. 112902
An electron cyclotron resonance (ECR) plasma postoxidation method has been employed for forming Al2O3/GeOx/Ge metal-oxide-semiconductor (MOS) structures. X-ray... 
PHYSICS, APPLIED | OPPORTUNITIES | CHALLENGES | MOSFETS
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
16. Full Text Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors
by Lee, Choong Hyun and Nishimura, Tomonori and Tabata, Toshiyuki and Zhao, Dandan and Nagashio, Kosuke and Toriumi, Akira
Applied Physics Letters, ISSN 0003-6951, 06/2013, Volume 102, Issue 23, p. 232107
We have systematically investigated electron mobility behaviors in germanium-on-insulator (GeOI) metal-oxide-semiconductor field-effect transistors (MOSFETs)... 
PHYSICS, APPLIED | MOSFETS
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
17. Full Text Lg=30 nm InAs Channel MOSFETs Exhibiting fmax=410 GHz and ft=357 GHz
by Wu, Jun and Fang, Yihao and Markman, Brian and Tseng, Hsin-Ying and Rodwell, Mark J. W
IEEE Electron Device Letters, ISSN 0741-3106, 04/2018, Volume 39, Issue 4, pp. 472 - 475
InAs | fmax | MOSFETs | MOSHEMTs
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
18. Full Text High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
by Xuan, Y and Wu, Y.Q and Ye, P.D
IEEE Electron Device Letters, ISSN 0741-3106, 04/2008, Volume 29, Issue 4, pp. 294 - 296
High-performance inversion-type enhancement- mode (E-mode) n-channel In 0.65 Ga 0.35 As MOSFETs with atomic-layer-deposited Al 2 O 3 as gate dielectric are... 
Atomic layer deposited (ALD) | Dielectrics | Substrates | enhancement mode (E-mode) | MOSFETs | Aluminum oxide | Silicon on insulator technology | Fabrication | inversion | MOSFET circuits | CMOS technology | Indium gallium arsenide | Threshold voltage | compound semiconductor | Transconductance | Enhancement mode (E-mode) | Inversion | Compound semi conductor | GATE OXIDE | atomic layer deposited (ALD) | TRANSCONDUCTANCE | GAAS MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | TRANSISTORS | DIELECTRICS | CHANNEL MOSFETS | GA2O3(GD2O3) | Drains | Voltage | Oxides | Leakage current | Gates
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
19. Full Text On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices
by Schwarz, Mike and Calvet, Laurie E and Snyder, John P and Krauss, Tillmann and Schwalke, Udo and Kloes, Alexander
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2017, Volume 64, Issue 9, pp. 3808 - 3815
The physical influence of temperature down to the cryogenic regime is analyzed in a comprehensive study and the comparison of IV and III-V Schottky barrier... 
Performance evaluation | MOSFET | thermionic and tunneling current | IV MOSFET | Photonic band gap | liquid-nitrogen regime | Iron | III–V MOSFET | schottky barrier (SB) | Tunneling | field emission (FE) | Effective mass | thermionic emission (TE) | Device modeling | double-gate (DG) MOSFET | III-V MOSFET | PHYSICS, APPLIED | PERFORMANCE | GATE | MODEL | SIMULATION | ENGINEERING, ELECTRICAL & ELECTRONIC | MECHANICS | IMPACT | METAL S/D | THRESHOLD VOLTAGE | Schottky barrier (SB) | MOSFETs | Cryogenics
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
20. Full Text High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications
by Hazra, Samir and De, Ankan and Lin Cheng and Palmour, John and Schupbach, Marcelo and Hull, Brett A and Allen, Scott and Bhattacharya, Subhashish
IEEE Transactions on Power Electronics, ISSN 0885-8993, 07/2016, Volume 31, Issue 7, pp. 4742 - 4754
Due to wider band gap of silicon carbide (SiC) compared to silicon (Si), MOSFET made in SiC has considerably lower drift region resistance, which is a... 
Insulated gate bipolar transistors | MOSFET | zero voltage switching (ZVS) turn-ON | 1700V Si BiMOSFET | Switches | converter efficiency | 1700V SiC MOSFET | Silicon carbide | 1700V Si IGBT | Logic gates | Silicon | switching characterization | Junctions | switching losses | Switching characterization | Switching losses | Zero voltage switching (ZVS) turn-ON | Converter efficiency | 1700-V SiC MOSFET | 1700-V Si IGBT | 1700-V Si BiMOSFET | HIGH-TEMPERATURE | DEVICES | INVERTER | ENGINEERING, ELECTRICAL & ELECTRONIC | Metal oxide semiconductor field effect transistors | Bipolar transistors | Research | Electric properties | Electric potential | Voltage | Converters | Devices | Switching | MOSFETs
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.