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1. Full Text Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs
by Masuda, Takeyoshi and Mikamura, Yasuki and Michikoshi, Hisato and Harada, Shinsuke and Saito, Yu and Hatayama, Tomoaki
Materials science forum, ISSN 0255-5476, 07/2020, Volume 1004, pp. 758 - 763
MOSFETs
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2. Full Text Common-Drain Bidirectional 1200V SiC MOSFETs
by Hitchcock, Collin W and Chow, T. Paul
Materials science forum, ISSN 0255-5476, 07/2020, Volume 1004, pp. 882 - 888
MOSFETs | Optimization
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3. Full Text An Investigation into the Dynamic Behavior of 3.3kV MOSFETs Body Diode
by Knoll, Lars and Canales, Francisco and Rahimo, Munaf and Kranz, Lukas and Badstübner, Uwe and Alfieri, Giovanni and Soler, Victor and Mihaila, Andrei and Bianda, Enea and Godignon, Philippe
Materials science forum, ISSN 0255-5476, 07/2019, Volume 963, pp. 621 - 624
Diodes | MOSFETs
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4. Full Text An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs
by Badami, Oves and Caruso, Enrico and Lizzit, Daniel and Osgnach, Patrik and Esseni, David and Palestri, Pierpaolo and Selmi, Luca
IEEE transactions on electron devices, ISSN 0018-9383, 06/2016, Volume 63, Issue 6, pp. 2306 - 2312
Semiconductor device modeling | ultrathin-body MOSFETs | MOSFET | Correlation | Scattering | Mobility | multigate MOSFETs | Silicon | Dielectrics | surface roughness (SR) scattering | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Atomic force microscopy | Computer simulation | Quantum wells | Surface roughness | Devices | MOSFETs
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5. Full Text Publisher's Note: “Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator” [Appl. Phys. Lett. 116, 212103 (2020)]
by Fei, Wenxi and Bi, Te and Iwataki, Masayuki and Imanishi, Shoichiro and Kawarada, Hiroshi
Applied physics letters, ISSN 0003-6951, 06/2020, Volume 116, Issue 26, p. 269901
MOSFETs | Silicon dioxide | Diamonds
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6. Full Text Reduced electric field in junctionless transistors
by Colinge, Jean-Pierre and Lee, Chi-Woo and Ferain, Isabelle and Akhavan, Nima Dehdashti and Yan, Ran and Razavi, Pedram and Yu, Ran and Nazarov, Alexei N and Doria, Rodrigo T
Applied physics letters, ISSN 0003-6951, 02/2010, Volume 96, Issue 7, pp. 073510 - 073510-3
Physical Sciences | Physics | Science & Technology | Physics, Applied
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7. Full Text Retraction: "Effects of high-temperature diluted-H2 annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO^sub 2^"
by Hirohisa Hirai and Koji Kita
Japanese Journal of Applied Physics, ISSN 0021-4922, 07/2017, Volume 56, Issue 7, p. 079201
Dilution | MOSFETs
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8. Full Text Retraction: "Effects of high-temperature diluted-H^sub 2^ annealing on effective mobility of 4H-SiC MOSFETs with thermally-grown SiO^sub 2^"
by Hirohisa Hirai and Koji Kita
Japanese Journal of Applied Physics, ISSN 0021-4922, 07/2017, Volume 56, Issue 7, p. 079201
Dilution | MOSFETs
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9. Full Text On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices
by Schwarz, Mike and Calvet, Laurie E and Snyder, John P and Krauss, Tillmann and Schwalke, Udo and Kloes, Alexander
IEEE transactions on electron devices, ISSN 0018-9383, 09/2017, Volume 64, Issue 9, pp. 3808 - 3815
Performance evaluation | MOSFET | thermionic and tunneling current | IV MOSFET | Photonic band gap | liquid-nitrogen regime | Iron | III–V MOSFET | schottky barrier (SB) | Tunneling | field emission (FE) | Effective mass | thermionic emission (TE) | Device modeling | double-gate (DG) MOSFET | III-V MOSFET | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | MOSFETs | Cryogenics
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10. Full Text Real-Time Aging Detection of SiC MOSFETs
by Erturk, Feyzullah and Ugur, Enes and Olson, John and Akin, Bilal
IEEE transactions on industry applications, ISSN 0093-9994, 01/2019, Volume 55, Issue 1, pp. 600 - 609
Temperature measurement | MOSFET | Silicon carbide | gate leakage current | Aging | MOSFET circuits | Logic gates | mosfet">silicon carbide (SiC) mosfet | gate oxide | Reliability | Aging detection | silicon carbide (SiC) mosfet | reliability | Power converters | Precursors | Current leakage | Accelerated tests | Leakage current | Accelerated aging tests | MOSFETs | Gates
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11. Full Text Vertical Tri-Gate Power MOSFETs in 4H-SiC
by Morisette, Dallas and Islam, Naeem and Sampath, Madankumar and Cooper, James A and Ramamurthy, Rahul P
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 680 - 683
Trench MOSFET | 3G-MOSFET | Fin-FET | MOSFETs
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12. Full Text Recent Progress of SiC MOSFET Devices
by Iwamuro, Noriyuki
Materials science forum, ISSN 0255-5476, 05/2019, Volume 954, pp. 90 - 98
MOSFETs | Power semiconductor devices
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13. Full Text Layout Modification of a PD-SOI n-MOSFET for Total Ionizing Dose Effect Hardening
by Roh, Young Tak and Lee, Hee Chul
IEEE transactions on electron devices, ISSN 0018-9383, 01/2019, Volume 66, Issue 1, pp. 308 - 315
MOSFET | radiation hardening | total ionizing dose (TID) | Doping | Logic gates | MOSFET circuits | Leakage currents | Layout modification | Substrates | silicon-on-insulator (SOI) | metal–oxide–semiconductor field-effect transistor (MOSFET) | metal-oxide-semiconductor field-effect transistor (MOSFET) | Gamma rays | Radiation effects | Semiconductor devices | Field effect transistors | Silicon substrates | N-type semiconductors | Leakage current | Foundries | Exposure | Gating and risering | MOSFETs
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14. Full Text New design for current-mode rational-powered membership function generator
by Abuelma’atti, Muhammad Taher and Kurniawan, Adi
AIP conference proceedings, ISSN 0094-243X, 11/2019, Volume 2173, Issue 1
Function generators | MOSFETs
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15. Full Text Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on-Insulator n-MOSFETs
by Lim, Hyeong-Rak and Kim, Seong Kwang and Han, Jae-Hoon and Kim, Hansung and Geum, Dae-Myeong and Lee, Yun-Joong and Ju, Byeong-Kwon and Kim, Hyung-Jun and Kim, Sanghyeon
IEEE electron device letters, ISSN 0741-3106, 09/2019, Volume 40, Issue 9, pp. 1362 - 1365
MOSFET | junctionless MOSFETs | Ge MOSFETs | Etching | Fabrication | epitaxial lift-off | wafer bonding | Ge-on-Insulator | MOSFET circuits | Logic gates | Germanium | Silicon | Ge-OI | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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16. Full Text Corrigendum to “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation”
by Pejović, Milić and Ciraj-Bjelac, Olivera and Kovačević, Milojko and Rajović, Zoran and Ilić, Gvozden
International journal of photoenergy, ISSN 1110-662X, 8/2020, Volume 2020, pp. 1 - 2
Gamma rays | MOSFETs
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17. Full Text Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs
by Singh, Manikant and Casbon, Michael A and Uren, Michael J and Pomeroy, James W and Dalcanale, Stefano and Karboyan, Serge and Tasker, Paul J and Man Hoi Wong and Sasaki, Kohei and Kuramata, Akito and Yamakoshi, Shigenobu and Higashiwaki, Masataka and Kuball, Martin
IEEE electron device letters, ISSN 0741-3106, 10/2018, Volume 39, Issue 10, pp. 1572 - 1575
Radio frequency | Temperature measurement | Performance evaluation | MOSFET | Pulse measurements | Ga₂O₃ MOSFET | power added efficiency (PAE) | pulsed IV | Logic gates | large signal RF | pulsed RF | Gain | MOSFET, large signal RF, pulsed RF, power added efficiency (PAE), pulsed IV | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Gallium oxides | Heating | Energy dissipation | Power efficiency | Performance degradation | MOSFETs | Thermal simulation
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18. Full Text Reliability enhanced SiC MOSFET with partially widened retrograde P-well structure
by Liu, Jiawei and Lu, Jiang and Tian, Xiaoli and Chen, Hong and Bai, Yun and Liu, Xinyu
Electronics letters, ISSN 0013-5194, 11/2020, Volume 56, Issue 23, pp. 1273 - 1275
Semiconductor technology | voltage 800.0 V | gate oxide interface | planar power MOSFET | ion implantation | partially widened retrograde P‐well structure | SiC | voltage 1.2 kV | shielding effect | standard planar MOSFET manufacture process | short circuit ability | N‐implanting region | semiconductor device models | fabrication technology | peak electric field | power MOSFET | semiconductor device reliability | semiconductor device manufacture | SC saturation current | additional implanting steps | silicon compounds | reliability enhanced MOSFET | wide band gap semiconductors | RP structure | MOSFET structure | gate oxide reliability | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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19. Full Text A Novel Scaling Theory for Fully Depleted Omega-Gate MOSFETs Included With Equivalent Number of Gates
by Te-Kuang Chiang
IEEE transactions on electron devices, ISSN 0018-9383, 03/2014, Volume 61, Issue 3, pp. 926 - 929
Semiconductor device modeling | natural length | MOSFET | equivalent number of gates (ENGs) | Logic gates | Cylindrical-shaped omega-gate ({\rm C}\Omega{\rm G}) MOSFETs | Threshold voltage | Mathematical model | rectangular-shaped Omega{\rm G}~({\rm R}\Omega{\rm G}) MOSFETs | Equations | oxide-to-gate underlap coverage factor (OUCF) | rectangular-shaped ΩG(R:G) MOSFETs | Cylindrical-shaped omega-gate C G) MOSFETs | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Metal oxide semiconductor field effect transistors | Usage | Numerical analysis | Scalability | Analysis | Innovations | Gates (Electronics) | Least squares | Depletion | Equivalence | Mathematical models | Devices | Cross sections | Channels | MOSFETs | Gates
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20. Full Text 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs
by Zeng, Ke and Vaidya, Abhishek and Singisetti, Uttam
IEEE electron device letters, ISSN 0741-3106, 09/2018, Volume 39, Issue 9, pp. 1385 - 1388
MOSFET | Voltage measurement | Electric breakdown | Fluorinert | air breakdown | Doping | power MOSFET | SOG doping | Semiconductor device measurement | spin-on-glass | Logic gates | gallium oxide | Electric fields | Field plate | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Organic chemistry | Electric potential | Gallium oxides | Breakdown | Chemical vapor deposition | Repair & maintenance | MOSFETs | Silicon dioxide | Electric field strength
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