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Applied Physics Letters, ISSN 0003-6951, 02/2010, Volume 96, Issue 7, pp. 073510 - 073510-3
The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or... 
MOSFET | TRIGATE SOI MOSFETS | UNIVERSALITY | electric fields | PHYSICS, APPLIED | INVERSION LAYER MOBILITY | SILICON | CMOS integrated circuits | SI MOSFETS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 165 - 168
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2018, Volume 65, Issue 5, pp. 1714 - 1720
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 11/2018, Volume 113, Issue 20
beta-Ga2O3 vertical trench Schottky barrier diodes (SBDs) are realized, demonstrating superior reverse blocking characteristics than the co-fabricated regular... 
PHYSICS, APPLIED | MOSFETS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2018, Volume 65, Issue 3, pp. 860 - 866
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2017, Volume 111, Issue 9, p. 92102
We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | MOSFETS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2016, Volume 63, Issue 6, pp. 2306 - 2312
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 12/2017, Volume 56, Issue 12, p. 120306
We demonstrate and characterize junctionless tri-gate InGaAs MOSFETs, fabricated using a simplified process with gate lengths down to Lg = 25 nm at a nanowire... 
Nanowires | MOSFETs
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2017, Volume 38, Issue 3, pp. 353 - 355
In this letter, we report on high breakdown voltage in situ oxide, GaN interlayer-based vertical trench MOSFETs (OG-FETs) on bulk GaN substrates. Following our... 
MOSFET | Electric breakdown | GaN | breakdown voltage | vertical MOSFET | Logic gates | trench MOSFET | GaN trench MOSFET | low on-resistance | Gallium nitride | MOCVD | Substrates | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 07/2017, Volume 56, Issue 7, p. 079201
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 07/2017, Volume 56, Issue 7, p. 079201
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2018, Volume 124, Issue 20, p. 205303
A border trap (BT) evaluation method was established for SiO2/GeO2/Ge gate stacks by using deep-level transient spectroscopy with a lock-in integrator. Ge... 
MOBILITY | PHYSICS, APPLIED | MOSFETS
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 03/2011, Volume 98, Issue 11, p. 112902
An electron cyclotron resonance (ECR) plasma postoxidation method has been employed for forming Al2O3/GeOx/Ge metal-oxide-semiconductor (MOS) structures. X-ray... 
PHYSICS, APPLIED | OPPORTUNITIES | CHALLENGES | MOSFETS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2013, Volume 102, Issue 23, p. 232107
We have systematically investigated electron mobility behaviors in germanium-on-insulator (GeOI) metal-oxide-semiconductor field-effect transistors (MOSFETs)... 
PHYSICS, APPLIED | MOSFETS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2018, Volume 39, Issue 4, pp. 472 - 475
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2017, Volume 64, Issue 9, pp. 3808 - 3815
Journal Article
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