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Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 05/2014, Volume 22, Issue 5, pp. 574 - 580
ABSTRACT The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon... 
equilibrium crystal shape | crystal growth shape | silicon | Crystal growth shape | Equilibrium crystal shape | Silicon | PHYSICS, APPLIED | ENERGY & FUELS | SI | MATERIALS SCIENCE, MULTIDISCIPLINARY | SYSTEMS | LIQUID INTERFACIAL-TENSION | ENERGIES | 2 DIMENSIONS | Crystal growth | Melts (crystal growth) | Crystals | Orientation | Curved | Three dimensional | Melts
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 467, pp. 77 - 81
•Two-dimensional growth process of KTa1−xNbxO3 crystals was visualized.•Square-shaped crystal for {110} plane follows the two-dimensional nucleation... 
A1. Crystal growth | A1. Interfacial morphology | B1. Potassium tantalate niobate | A1. Kinetics | A2. In situ observation | Crystal growth | PHYSICS, APPLIED | MELT | KTN | CONVECTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLOGRAPHY | CZOCHRALSKI METHOD | FILMS | In situ observation | Potassium tantalate niobate | COOLING TECHNIQUE | Kinetics | Interfacial morphology
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2019, Volume 528, p. 125263
Journal Article
CrystEngComm, ISSN 1466-8033, 2018, Volume 20, Issue 16, pp. 2221 - 2226
A fascinating phenomenon of nonbirefringent bands that are comprised of repetitive stacks of discrete lamellae with a nearly flat-on orientation along the... 
ETHER ETHER KETONE | DIBLOCK COPOLYMERS | SINGLE-CRYSTALS | RADIAL PERIODIC VARIATION | CRYSTALLIZATION BEHAVIOR | STAR-SHAPED POLY(EPSILON-CAPROLACTONE) | MICRO-EVAPORATION | CRYSTALLOGRAPHY | ISOTACTIC POLYSTYRENE | SPHERULITES | BLENDS | CHEMISTRY, MULTIDISCIPLINARY | Crystal growth | Thin films | Ethylene oxide | Mass transfer | Crystals | Crystallization
Journal Article
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, ISSN 1364-503X, 02/2018, Volume 376, Issue 2113, p. 20170205
We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge100-xSix (x = 25, 50, 75) alloy melts as a function... 
Undercooling | Semiconductors | Containerless processing | Solidification | containerless processing | VELOCITY | DENDRITIC GROWTH | GRAIN-REFINEMENT | MECHANISM | solidification | MULTIDISCIPLINARY SCIENCES | SILICON | undercooling | semiconductors | FACET | RAPID SOLIDIFICATION | INTERFACE | 1006 | 1002 | 117 | Mesoscopic Description | 170 | Section 2 | Review | 1009
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2020, Volume 534, Issue C, p. 125466
•High pressure Bridgman technique is suitable to synthesize CdTe from elemental sources.•Highly volatile dopants can be efficiently incorporated into melt... 
B1. Cadmium compounds | A2. Growth from melt | A2. Single crystal growth | A1. Doping | B2. Semiconducting materials | B3. Solar cells | A1. Solubility | Solar cells | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Doping | Solubility | Single crystal growth | Semiconducting materials | CRYSTALLOGRAPHY | Growth from melt | IMPURITIES | EFFICIENCY | Cadmium compounds
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2019, Volume 509, pp. 60 - 65
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2018, Volume 487, pp. 126 - 130
•Pr: SrI2 single crystals with Pr1, 2, 3, 5% were grown by the H-μ-PD method.•Pr1%:SrI2 single crystal indicated high transparency without crack and opaque... 
B3. Scintillators | B1. Halides | A2. Growth from melt | B2. Scintillator materials | Scintillators | PHYSICS, APPLIED | Scintillator materials | Halides | MATERIALS SCIENCE, MULTIDISCIPLINARY | IODIDE | CRYSTALLOGRAPHY | Growth from melt
Journal Article
The Journal of Physical Chemistry B, ISSN 1520-6106, 08/2017, Volume 121, Issue 33, pp. 7978 - 7986
Crystal growth rates in Ge18Sb28Se54 bulk glass and thin film were measured using optical and scanning electron microscopy under isothermal conditions. The... 
THERMAL-STABILITY | SYSTEM | FORMING LIQUIDS | GE2SB2SE5 GLASS | MELT | KINETICS | CRYSTALLIZATION BEHAVIOR | CHEMISTRY, PHYSICAL | DIFFUSION | FLOW
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 468, pp. 391 - 394
Ce-doped Lu2Si2O7 scintillator contains radioactive isotope 176Lu which causes an unwanted intrinsic background signal. The development of scintillators with... 
B1. Oxides | Seed crystals | A2. Growth from melt | Single crystal growth | B2. Scintillator materials | PHYSICS, APPLIED | Scintillator materials | MATERIALS SCIENCE, MULTIDISCIPLINARY | RARE-EARTH DISILICATES | Oxides | CRYSTALLOGRAPHY | Growth from melt
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2017, Volume 474, pp. 171 - 177
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2018, Volume 483, pp. 31 - 38
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2017, Volume 474, pp. 24 - 30
The quality of sapphire single crystals used as substrates for LED production is largely influenced by two defects: dislocation density and bubbles trapped in... 
B1. Sapphire | A2. Czochralski method | A2. Growth from melt | A2. Single crystal growth | PHYSICS, APPLIED | SOLUTE SEGREGATION | CONVECTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | Single crystal growth | Czochralski method | CRUCIBLE GEOMETRY | CRYSTALLOGRAPHY | FLOW | Sapphire | Growth from melt | NUMERICAL-SIMULATION | INTERFACE SHAPE
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2018, Volume 483, pp. 175 - 182
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2016, Volume 435, pp. 68 - 75
Journal Article