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IEEE Transactions on Nuclear Science, ISSN 0018-9499, 06/2013, Volume 60, Issue 3, pp. 1953 - 1969
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 07/2017, Volume 32, Issue 8, p. 83002
A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on... 
CBRAM | VCM | resistance switching | singleevent effects | ReRAM | total dose | radiation effects | PHYSICS, CONDENSED MATTER | MEMORY DEVICE | singl-event effects | PROTON IRRADIATION | SINGLE | DISPLACEMENT DAMAGE | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHALCOGENIDE GLASSES | ENGINEERING, ELECTRICAL & ELECTRONIC | TAOX | ELECTRICAL CHARACTERISTICS | RAY-RADIATION | X-RAY | RESISTANCE
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2018, Volume 39, Issue 6, pp. 823 - 826
In this letter, ferroelectric memory performance of TiN/Y-doped-HfO 2 (HYO)/TiN capacitors is investigated under proton radiation with 3-MeV energy and... 
Protons | HfO | Capacitors | radiation | Fatigue | Hafnium compounds | Permittivity | Electric fields | Hysteresis | ferroelectric memory | proton | HfO2 | SPACE | FILMS | CAPACITORS | ELECTRONICS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 08/2018, Volume 65, Issue 8, pp. 1511 - 1518
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 02/2017, Volume 32, Issue 3, p. 33003
We present a comprehensive review of the effects of ionizing radiation on advanced flash memories. The effects of ionizing radiation as well as the mechanisms... 
flash memory | single event effect | total ionizing dose | floating gate cell | soft error | CELLS | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, MULTIDISCIPLINARY | ION | CROSS-SECTION | TO-SAMPLE VARIABILITY | PROTON-INDUCED UPSETS | FLOATING-GATE ERRORS | ENGINEERING, ELECTRICAL & ELECTRONIC | NOR | SINGLE EVENT UPSETS | COMMERCIAL NAND | SOFT ERRORS
Journal Article
SMART MATERIALS AND STRUCTURES, ISSN 0964-1726, 08/2019, Volume 28, Issue 8, p. 85023
A new shape memory alloy (SMA)-based coupling system for ultra-high vacuum (UHV) applications in particle in accelerators is currently under investigation at... 
shape memory alloys | TRANSFORMATION | coupling | CERN | mixed field irradiation | INSTRUMENTS & INSTRUMENTATION | ultra high vacuum | CHARM | MATERIALS SCIENCE, MULTIDISCIPLINARY | FLUKA | MECHANICAL-PROPERTIES | NEUTRON-IRRADIATION
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2016, Volume 64, pp. 152 - 157
With shrinking dimensions and increased number of on-chip transistors radiation can provoke faults in integrated circuits even at sea level. This paper... 
Single-event Effects | SEU | SET | FDSOI | Single-Event Upset | TCAD | Single-Event Transient | Radiation | Heavy-ion | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC | Integrated circuits | Memory (Computers) | Analysis | Complementary metal oxide semiconductors | Semiconductor chips
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 11/2019, Volume 102, p. 113450
Using the Kr, Xe and Bi ions provided by the Heavy Ion Research Facility in Lanzhou (HIRFL), the short-term and long-term radiation effects induced by heavy... 
Annealing | Heavy ions | Single event upset | Flash memories | Retention errors
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2014, Volume 61, Issue 6, pp. 2985 - 2990
The impact of ionizing radiation on the retention and endurance of programmable metallization cells (PMC) ReRAM cells is investigated and presented for the... 
Protons | Metallization | memory | PMC | chalcogenide | programmable metallization cell | endurance | Read only memory | Resistance | CBRAM | conductive bridging RAM | Silver | Nonvolatile memory | non-volatile | total ionizing dose | nano-ionic memory | ReRAM | ionizing radiation | retention | ENGINEERING, ELECTRICAL & ELECTRONIC | NUCLEAR SCIENCE & TECHNOLOGY
Journal Article
Journal of Computational Electronics, ISSN 1569-8025, 3/2018, Volume 17, Issue 1, pp. 279 - 287
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 2013, Volume 60, Issue 6, pp. 4555 - 4562
The effects of X-ray and proton radiation on a LiNbO2 analog memristor are investigated by I-V hysteresis, Electrochemical Impedance Spectroscopy,... 
total ionizing dose | Analog memristor | proton radiation | lithium niobite | X-ray radiation | THIN-FILMS | PROTON | INTERCALATION | ENGINEERING, ELECTRICAL & ELECTRONIC | IRRADIATION | LIXNBO2 | NUCLEAR SCIENCE & TECHNOLOGY | RESISTANCE | DYNAMICS | DEVICES | SYSTEMS | RESISTIVE-SWITCHING MEMORY
Journal Article
18.