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Nature, ISSN 0028-0836, 11/2011, Volume 479, Issue 7373, pp. 310 - 316
For more than four decades, transistors have been shrinking exponentially in size, and therefore the number of transistors in a single microelectronic chip has... 
VOLTAGE | DESIGN | MULTIDISCIPLINARY SCIENCES | DEVICE | GATE | SOI | BULK | MOSFETS | Metal oxide semiconductor field effect transistors | Product development | Forecasts and trends | Microelectronics | Miniature electronic equipment | Degradation | Semiconductor devices | Chips | Transistors | Packing density | Devices | MOSFETs
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2010, Volume 107, Issue 9, pp. 094505 - 094505-8
A quasianalytical modeling approach for graphene metal-oxide-semiconductor field-effect transistors (MOSFETs) with gapless large-area graphene channels is... 
PHYSICS, APPLIED | EPITAXIAL GRAPHENE | PERFORMANCE | SIO2 | Metal oxide semiconductors | Graphene | Field-effect transistors | Analysis | Electric properties
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2005, Volume 97, Issue 1, p. 11101
This article reviews the history and current progress in high-mobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field-effect transistors... 
P-TYPE | RELAXED SI1-XGEX | PHYSICS, APPLIED | SILICON INVERSION-LAYERS | MODULATION-DOPED SI/SIGE | MOLECULAR-BEAM EPITAXY | HIGH-ELECTRON-MOBILITY | HIGH HOLE MOBILITY | THREADING DISLOCATION DENSITIES | ON-INSULATOR LAYERS | N-MOSFETS | Silicon compounds | Germanium | Metal oxide semiconductors | Analysis | Electric properties
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2019, Volume 126, Issue 14
We report on the effects of barium interfacial layer (IL) deposition and nitric oxide (NO) anneals on interface/near-interface defects in 4H-SiC... 
Barium | Semiconductor devices | Defect annealing | Field effect transistors | Magnetic resonance | Passivity | Silicon dioxide | Defects | Metal oxides | Organic chemistry | Nitric oxide | Transistors | Deposition
Journal Article
Nature Nanotechnology, ISSN 1748-3387, 2012, Volume 7, Issue 8, pp. 504 - 508
High-speed electronic devices rely on short carrier transport times, which are usually achieved by decreasing the channel length and/or increasing the carrier... 
GASES | 2-DIMENSIONAL ELECTRON | FILM | MATERIALS SCIENCE, MULTIDISCIPLINARY | SPACE-CHARGE | DEVICES | NANOSCIENCE & NANOTECHNOLOGY | EMISSION | LAYER | CARBON NANOTUBES | MOSFETS | CAPACITANCE | Vacuum | Metals - chemistry | Semiconductors | Oxides - chemistry | Nanotechnology | Transistors, Electronic
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2007, Volume 101, Issue 10, pp. 104503 - 104503-22
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2018, Volume 112, Issue 3
We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2... 
Metal oxides | Silicon carbide | Semiconductor devices | Field effect transistors | Bright tempering | Dependence | Photoluminescence | Oxidation | Transistors | Quantum theory | MOSFETs | Silicon dioxide
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2018, Volume 112, Issue 2
The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as... 
Radiation effects | Semiconductor devices | Field effect transistors | Current leakage | Hardness | Silicon dioxide | MOSFETs | Radiation dosage | Metal oxides | Gamma rays | Gallium oxides | Ionizing radiation | Threshold voltage | Transistors | Radiation damage | Gates
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2019, Volume 114, Issue 13
Junctionless Germanium-on-insulator (GOI) p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been realized with an ultra-thin-body... 
Metal oxides | Semiconductor devices | Field effect transistors | Scattering | Hole mobility | Dependence | Surface roughness | Transistors | MOSFETs
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2016, Volume 109, Issue 3, p. 33503
The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is... 
PHYSICS, APPLIED | FABRICATION | OPERATION | PERFORMANCE | MOSFETS | MOSFET | WALLS | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | DEPOSITION | HOLES | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | TWO-DIMENSIONAL CALCULATIONS | LAYERS | HYDROGEN | METALS | CRYSTALS | ALUMINIUM OXIDES | DIAMONDS | MODULATION | SEMICONDUCTOR MATERIALS | SURFACES
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 03/2019, Volume 125, Issue 11
InGaSb-on-insulator (InGaSb-OI) and InAs/InGaAs/InAs-on-insulator (InAs/InGaAs-OI) structures have been realized on Si by a direct wafer bonding (DWB)... 
Buffer layers | Gallium antimonides | Semiconductor devices | Field effect transistors | Hole mobility | Metalorganic chemical vapor deposition | Antimony | Surface roughness | Substrates | MOSFETs | Indium arsenides | Aluminum oxide | Metal oxides | Organic chemistry | Indium gallium arsenides | Wafers | Chemical bonds | Organic chemicals | Transistors
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2007, Volume 102, Issue 5, pp. 054307 - 054307-7
A real-space quantum transport simulator for graphene nanoribbon (GNR) metal-oxide-semiconductor field-effect transistors (MOSFETs) has been developed and used... 
EMISSION | DEVICES | PHYSICS, APPLIED | Metal oxide semiconductors | Analysis | Graphite | Tunneling (Physics) | Structure | Electrostatics | Electric properties
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 12/2013, Volume 103, Issue 25, p. 253509
Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of... 
INTERFACIAL CHEMISTRY | PHYSICS, APPLIED | MOSFETS | ALD AL2O3 | Semiconductor devices | Capacitance-voltage characteristics | Barrier layers | Hafnium oxide | MOSFETs | Aluminum oxide | Metal oxides | Atomic layer deposition | Surface pretreatments | Self alignment | Electron mobility | Leakage current | Transistors | Transconductance | Activation
Journal Article
2011, ISBN 9780521516846, 490
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in... 
Metal oxide semiconductors | Design and construction | Electron transport | Nanoelectronics
Book
Journal of Applied Physics, ISSN 0021-8979, 12/2015, Volume 118, Issue 23, p. 234502
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2016, Volume 109, Issue 14
Silicon carbide (SiC) based metal-oxide-semiconductor field-effect transistors (MOSFETs) have great promise in high power and high temperature applications.... 
Semiconductor devices | Field effect transistors | Carbon | Silicon dioxide | MOSFETs | Defects | Metal oxides | Silicon carbide | Metal oxide semiconductors | Silicon | Electron paramagnetic resonance | Transistors | Bonding | Signal to noise ratio
Journal Article
by Liu J W and Oosato H and Liao M Y and Koide Y
Applied Physics Letters, ISSN 0003-6951, 05/2017, Volume 110, Issue 20
Enhancement-mode (E-mode) hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated with an Y2O3 oxide... 
Metal oxides | Semiconductor devices | Field effect transistors | Electron beam evaporators | Diamonds | Adsorbates | Yttrium oxide | Transistors | Hydrogenation | MOSFETs
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2014, Volume 61, Issue 11, pp. 3639 - 3645
Journal Article
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