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1. Full Text Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors
by Ferain, Isabelle and Colinge, Cynthia A and Colinge, Jean-Pierre
Nature, ISSN 0028-0836, 11/2011, Volume 479, Issue 7373, pp. 310 - 316
For more than four decades, transistors have been shrinking exponentially in size, and therefore the number of transistors in a single microelectronic chip has... 
VOLTAGE | DESIGN | MULTIDISCIPLINARY SCIENCES | DEVICE | GATE | SOI | BULK | MOSFETS | Metal oxide semiconductor field effect transistors | Product development | Forecasts and trends | Microelectronics | Miniature electronic equipment | Degradation | Semiconductor devices | Chips | Transistors | Packing density | Devices | MOSFETs
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2. Full Text Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels
by Thiele, S A and Schaefer, J A and Schwierz, F
Journal of Applied Physics, ISSN 0021-8979, 05/2010, Volume 107, Issue 9, pp. 094505 - 094505-8
A quasianalytical modeling approach for graphene metal-oxide-semiconductor field-effect transistors (MOSFETs) with gapless large-area graphene channels is... 
PHYSICS, APPLIED | EPITAXIAL GRAPHENE | PERFORMANCE | SIO2 | Metal oxide semiconductors | Graphene | Field-effect transistors | Analysis | Electric properties
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3. Mosfet in circuit design
: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
by Crawford, Robert H
1967, Texas Instruments electronics series., xiii, 130
Transistor circuits | Field-effect transistors
Book
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4. Mosfet in circuit design
: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
by Crawford, Robert H
1967, Texas Instruments electronics series., xiii, 130
Transistor circuits | Field-effect transistors
Book
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5. Full Text Strained Si, SiGe, and Ge channels for high-mobility metal-oxide- semiconductor field-effect transistors
by Lee, Minjoo L and Fitzgerald, Eugene A and Bulsara, Mayank T and Currie, Matthew T and Lochtefeld, Anthony
Journal of Applied Physics, ISSN 0021-8979, 01/2005, Volume 97, Issue 1, p. 11101
This article reviews the history and current progress in high-mobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field-effect transistors... 
P-TYPE | RELAXED SI1-XGEX | PHYSICS, APPLIED | SILICON INVERSION-LAYERS | MODULATION-DOPED SI/SIGE | MOLECULAR-BEAM EPITAXY | HIGH-ELECTRON-MOBILITY | HIGH HOLE MOBILITY | THREADING DISLOCATION DENSITIES | ON-INSULATOR LAYERS | N-MOSFETS | Silicon compounds | Germanium | Metal oxide semiconductors | Analysis | Electric properties
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6. Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors
by Ashton J P and Lenahan P M and Lichtenwalner D J and Lelis A J and Anders M A
Journal of Applied Physics, ISSN 0021-8979, 10/2019, Volume 126, Issue 14
We report on the effects of barium interfacial layer (IL) deposition and nitric oxide (NO) anneals on interface/near-interface defects in 4H-SiC... 
Barium | Semiconductor devices | Defect annealing | Field effect transistors | Magnetic resonance | Passivity | Silicon dioxide | Defects | Metal oxides | Organic chemistry | Nitric oxide | Transistors | Deposition
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7. Full Text Metal-oxide-semiconductor field-effect transistor with a vacuum channel
by Srisonphan, Siwapon and Jung, Yun Suk and Kim, Hong Koo
Nature Nanotechnology, ISSN 1748-3387, 2012, Volume 7, Issue 8, pp. 504 - 508
High-speed electronic devices rely on short carrier transport times, which are usually achieved by decreasing the channel length and/or increasing the carrier... 
GASES | 2-DIMENSIONAL ELECTRON | FILM | MATERIALS SCIENCE, MULTIDISCIPLINARY | SPACE-CHARGE | DEVICES | NANOSCIENCE & NANOTECHNOLOGY | EMISSION | LAYER | CARBON NANOTUBES | MOSFETS | CAPACITANCE | Vacuum | Metals - chemistry | Semiconductors | Oxides - chemistry | Nanotechnology | Transistors, Electronic
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8. Full Text Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
by Sun, Y and Thompson, S E and Nishida, T
Journal of Applied Physics, ISSN 0021-8979, 05/2007, Volume 101, Issue 10, pp. 104503 - 104503-22
A detailed theoretical picture is given for the physics of strain effects in bulk semiconductors and surface Si, Ge, and III-V channel... 
CUBIC SEMICONDUCTORS | RELAXED SI1-XGEX | PHYSICS, APPLIED | HOLE MOBILITY ENHANCEMENTS | CYCLOTRON-RESONANCE | DEFORMATION POTENTIALS | SILICON INVERSION-LAYERS | UNIAXIAL-STRESS | MONTE-CARLO-SIMULATION | BAND-STRUCTURE | ELECTRON-TRANSPORT | Metal oxide semiconductor field effect transistors | Logic circuitry | Design and construction | Analysis | Electric currents, Vagrant
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9. Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors
by Abe Y and Umeda T and Okamoto M and Kosugi R and Harada S and Haruyama M and Kada W and Hanaizumi O and Onoda S and Ohshima T
Applied Physics Letters, ISSN 0003-6951, 01/2018, Volume 112, Issue 3
We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2... 
Metal oxides | Silicon carbide | Semiconductor devices | Field effect transistors | Bright tempering | Dependence | Photoluminescence | Oxidation | Transistors | Quantum theory | MOSFETs | Silicon dioxide
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10. Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation
by Wong Man Hoi and Takeyama Akinori and Makino Takahiro and Ohshima Takeshi and Kuramata Akito and Yamakoshi Shigenobu and Higashiwaki Masataka
Applied Physics Letters, ISSN 0003-6951, 01/2018, Volume 112, Issue 2
The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as... 
Radiation effects | Semiconductor devices | Field effect transistors | Current leakage | Hardness | Silicon dioxide | MOSFETs | Radiation dosage | Metal oxides | Gamma rays | Gallium oxides | Ionizing radiation | Threshold voltage | Transistors | Radiation damage | Gates
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11. Hole mobility in the ultra-thin-body junctionless germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistors
by Li Yukun and Zhang Rui
Applied Physics Letters, ISSN 0003-6951, 04/2019, Volume 114, Issue 13
Junctionless Germanium-on-insulator (GOI) p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been realized with an ultra-thin-body... 
Metal oxides | Semiconductor devices | Field effect transistors | Scattering | Hole mobility | Dependence | Surface roughness | Transistors | MOSFETs
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12. Full Text Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate
by Inaba, Masafumi and Muta, Tsubasa and Kobayashi, Mikinori and Saito, Toshiki and Shibata, Masanobu and Matsumura, Daisuke and Kudo, Takuya and Hiraiwa, Atsushi and Kawarada, Hiroshi
Applied Physics Letters, ISSN 0003-6951, 07/2016, Volume 109, Issue 3, p. 33503
The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is... 
PHYSICS, APPLIED | FABRICATION | OPERATION | PERFORMANCE | MOSFETS | MOSFET | WALLS | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | DEPOSITION | HOLES | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | TWO-DIMENSIONAL CALCULATIONS | LAYERS | HYDROGEN | METALS | CRYSTALS | ALUMINIUM OXIDES | DIAMONDS | MODULATION | SEMICONDUCTOR MATERIALS | SURFACES
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13. InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding
by Yokoyama Masafumi and Yokoyama Haruki and Takenaka Mitsuru and Takagi Shinichi
Journal of Applied Physics, ISSN 0021-8979, 03/2019, Volume 125, Issue 11
InGaSb-on-insulator (InGaSb-OI) and InAs/InGaAs/InAs-on-insulator (InAs/InGaAs-OI) structures have been realized on Si by a direct wafer bonding (DWB)... 
Buffer layers | Gallium antimonides | Semiconductor devices | Field effect transistors | Hole mobility | Metalorganic chemical vapor deposition | Antimony | Surface roughness | Substrates | MOSFETs | Indium arsenides | Aluminum oxide | Metal oxides | Organic chemistry | Indium gallium arsenides | Wafers | Chemical bonds | Organic chemicals | Transistors
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14. Full Text Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation
by Liang, Gengchiau and Neophytou, Neophytos and Lundstrom, Mark S and Nikonov, Dmitri E
Journal of Applied Physics, ISSN 0021-8979, 09/2007, Volume 102, Issue 5, pp. 054307 - 054307-7
A real-space quantum transport simulator for graphene nanoribbon (GNR) metal-oxide-semiconductor field-effect transistors (MOSFETs) has been developed and used... 
EMISSION | DEVICES | PHYSICS, APPLIED | Metal oxide semiconductors | Analysis | Graphite | Tunneling (Physics) | Structure | Electrostatics | Electric properties
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15. Full Text High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
by Lin, TD and Chang, WH and Chu, RL and Chang, YC and Chang, YH and Lee, MY and Hong, PF and Chen, MC and Kwo, J and Hong, M
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 12/2013, Volume 103, Issue 25, p. 253509
Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of... 
INTERFACIAL CHEMISTRY | PHYSICS, APPLIED | MOSFETS | ALD AL2O3 | Semiconductor devices | Capacitance-voltage characteristics | Barrier layers | Hafnium oxide | MOSFETs | Aluminum oxide | Metal oxides | Atomic layer deposition | Surface pretreatments | Self alignment | Electron mobility | Leakage current | Transistors | Transconductance | Activation
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16. Nanoscale MOS transistors
: semi-classical transport and applications
by Esseni, D and Books24x7, Inc
2011, ISBN 9780521516846, 490
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in... 
Metal oxide semiconductors | Design and construction | Electron transport | Nanoelectronics
Book
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17. Full Text Anomalous degradation of low-field mobility in short-channel metal-oxide-semiconductor field-effect transistors
by Natori, Kenji and Iwai, Hiroshi and Kakushima, Kuniyuki
Journal of Applied Physics, ISSN 0021-8979, 12/2015, Volume 118, Issue 23, p. 234502
Metal oxide semiconductors | Research | Transistors | Backscattering | Analysis
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18. Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?
by Anders M A and Lelis A J
Applied Physics Letters, ISSN 0003-6951, 10/2016, Volume 109, Issue 14
Silicon carbide (SiC) based metal-oxide-semiconductor field-effect transistors (MOSFETs) have great promise in high power and high temperature applications.... 
Semiconductor devices | Field effect transistors | Carbon | Silicon dioxide | MOSFETs | Defects | Metal oxides | Silicon carbide | Metal oxide semiconductors | Silicon | Electron paramagnetic resonance | Transistors | Bonding | Signal to noise ratio
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19. Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
by Liu J W and Oosato H and Liao M Y and Koide Y
Applied Physics Letters, ISSN 0003-6951, 05/2017, Volume 110, Issue 20
Enhancement-mode (E-mode) hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated with an Y2O3 oxide... 
Metal oxides | Semiconductor devices | Field effect transistors | Electron beam evaporators | Diamonds | Adsorbates | Yttrium oxide | Transistors | Hydrogenation | MOSFETs
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20. Full Text Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ Si2H6 Surface Passivation: Impact of Sn Composition
by Yan Liu and Jing Yan and Hongjuan Wang and Qingfang Zhang and Mingshan Liu and Bin Zhao and Chunfu Zhang and Buwen Cheng and Yue Hao and Genquan Han
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2014, Volume 61, Issue 11, pp. 3639 - 3645
We report a study about the impact of Sn composition on the performance of strained germanium-tin (GeSn) pMOSFETs. GeSn pMOSFETs with Sn compositions of 0.027,... 
MOSFET | mobility | metal-oxide-semiconductor field-effect transistor (MOSFET) | Tin | Logic gates | Silicon | Effective mass | Germanium-tin (GeSn) | Strain | Passivation | PMOSFETS | CMOS | DESIGN | PHYSICS, APPLIED | GATE | MOSFETS | THICKNESS | ENGINEERING, ELECTRICAL & ELECTRONIC | Metal oxide semiconductor field effect transistors | Thermal properties | Measurement | Tin compounds | Usage | Gates (Electronics) | Innovations | Voltage | Germanium | Electric properties
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