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2006, 1. Aufl., ISBN 9780470855416, xxiii, 303
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS... 
Metal oxide semiconductor field-effect transistors | Mathematical models | Metal oxide semiconductors
Book
2011, ISBN 9780521516846, xvii, 470
... nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design... 
Metal oxide semiconductors | Design and construction | Electron transport | Nanoelectronics
Book
2006, ISBN 0387280022, vi, 217
Silicon CMOS technology continues to drive progress in electronics, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit... 
Metal oxide semiconductor field-effect transistors | Mathematical models | Nanostructured materials | Nanotechnology | Optical materials | Solid State Physics | Condensed Matter Physics | Engineering | Spectroscopy and Microscopy | Electronics and Microelectronics, Instrumentation | Optical and Electronic Materials
Book
Nature (London), ISSN 1476-4687, 11/2011, Volume 479, Issue 7373, pp. 310 - 316
Journal Article
Nature nanotechnology, ISSN 1748-3395, 07/2012, Volume 7, Issue 8, pp. 504 - 508
Journal Article
Journal of applied physics, ISSN 1089-7550, 05/2007, Volume 101, Issue 10, pp. 104503 - 104503-22
A detailed theoretical picture is given for the physics of strain effects in bulk semiconductors and surface Si, Ge, and III-V channel metal-oxide-semiconductor field-effect transistors... 
Physical Sciences | Physics | Science & Technology | Physics, Applied | Metal oxide semiconductor field effect transistors | Logic circuitry | Design and construction | Analysis | Electric currents, Vagrant
Journal Article
Journal of applied physics, ISSN 1089-7550, 05/2010, Volume 107, Issue 9, pp. 094505 - 094505-8
A quasianalytical modeling approach for graphene metal-oxide-semiconductor field-effect transistors (MOSFETs... 
Physical Sciences | Physics | Science & Technology | Physics, Applied | Metal oxide semiconductors | Graphene | Field-effect transistors | Analysis | Electric properties
Journal Article
Science (American Association for the Advancement of Science), ISSN 1095-9203, 10/2018, Volume 362, Issue 6412, pp. 319 - 324
Journal Article