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1. Full Text Defect state passivation at III-V oxide interfaces for complementary metal-oxide-semiconductor devices
by Robertson, J and Guo, Y and Lin, L
Journal of applied physics, ISSN 0021-8979, 03/2015, Volume 117, Issue 11, p. 112806
Physical Sciences | Physics | Science & Technology | Physics, Applied | Gallium arsenide | Metallic oxides | Chemical properties | Electronic structure | Metal oxide semiconductors | Semiconductor devices | Diffusion barriers | Configurations | Passivity | Substrates | Defects | NITRIDATION | SEMICONDUCTOR DEVICES | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | PASSIVATION | SUBSTRATES | DIFFUSION BARRIERS | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | ELECTRONIC STRUCTURE | ENERGY GAP | CHEMICAL BONDS | METALS | GALLIUM ARSENIDES | INTERFACES | OXIDES | CRYSTAL DEFECTS | SEMICONDUCTOR MATERIALS | SURFACES
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2. Full Text Complementary Metal Oxide Semiconductor Technology With and On Paper
by Martins, Rodrigo and Nathan, Arokia and Barros, Raquel and Pereira, Luís and Barquinha, Pedro and Correia, Nuno and Costa, Ricardo and Ahnood, Arman and Ferreira, Isabel and Fortunato, Elvira
Advanced materials (Weinheim), ISSN 0935-9648, 10/2011, Volume 23, Issue 39, pp. 4491 - 4496
flexible electronics | oxide semiconductors | paper electronics | recyclable paper electronics | complementary metal oxide semiconductors (CMOS) | Materials Science | Materials Science, Multidisciplinary | Physics, Condensed Matter | Science & Technology - Other Topics | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Physical Sciences | Chemistry | Nanoscience & Nanotechnology | Technology | Chemistry, Multidisciplinary | Temperature | Metals - chemistry | Semiconductors | Nanotubes, Carbon - chemistry | Oxides - chemistry | Paper | Tin Compounds - chemistry | Silicon - chemistry | Electrodes | CMOS | Metal oxide semiconductors | Oxides | Dielectrics | Devices | Index Medicus
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3. Full Text Advances in Complementary-Metal-Oxide-Semiconductor-Based Integrated Biosensor Arrays
by Arya, Sunil K and Wong, Chee Chung and Jeon, Yong Joon and Bansal, Tushar and Park, Mi Kyoung
Chemical reviews, ISSN 0009-2665, 2015, Volume 115, Issue 11, pp. 5116 - 5158
Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Science & Technology | Metals - chemistry | Semiconductors | Oxides - chemistry | Biosensing Techniques | Usage | Research | Biosensors | Complementary metal oxide semiconductors | Oxidation | Arrays | Metals | Index Medicus
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4. Full Text High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
by Yu, Lili and Zubair, Ahmad and Santos, Elton J. G and Zhang, Xu and Lin, Yuxuan and Zhang, Yuhao and Palacios, Tomás
Nano letters, ISSN 1530-6984, 08/2015, Volume 15, Issue 8, pp. 4928 - 4934
Materials Science | Materials Science, Multidisciplinary | Physics, Condensed Matter | Science & Technology - Other Topics | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Physical Sciences | Chemistry | Nanoscience & Nanotechnology | Technology | Chemistry, Multidisciplinary | Selenium Compounds - chemistry | Tungsten Compounds - chemistry | Metals - chemistry | Semiconductors | Equipment Design | Oxides - chemistry | Index Medicus
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5. Transient-induced latchup in CMOS integrated circuits
by Ker, Ming-Dou and Hsu, Sheng-Fu and Books24x7, Inc
2009, 1. Aufl., ISBN 0470824077, xiii, 249
Reliability | Metal oxide semiconductors, Complementary | Defects | Components, Circuits, Devices and Systems
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6. Full Text IL analysis for 8-way power combining network in 77–110 GHz 40 nm-complementary metal–oxide–semiconductor PA design
by Huang, Ching-Ying and Wu, Pin-Hsuan and Wu, Kun-Long and Hu, Robert and Chang, Chi-Yang
IET circuits, devices & systems, ISSN 1751-858X, 11/2019, Volume 13, Issue 8, pp. 1181 - 1186
Research Article | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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7. Reliability wearout mechanisms in advanced CMOS technologies
by Strong, Alvin W., 1946 and IEEE Solid-State Circuits Society
2009, IEEE Press series on microelectronic systems, ISBN 9780471731726, Volume 12, xv, 624
Reliability | Metal oxide semiconductors, Complementary | Components, Circuits, Devices and Systems | Electricity | Technology | Microelectronics
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8. Full Text Waveguide-coupled detector in zero-change complementary metal-oxide-semiconductor
by Alloatti, L and Srinivasan, S.A and Orcutt, J.S and Ram, R.J
Applied physics letters, ISSN 0003-6951, 07/2015, Volume 107, Issue 4, p. 41104
Physical Sciences | Physics | Science & Technology | Physics, Applied | Dark current | CMOS | Metal oxide semiconductors | Change detection | Bias | Photometers
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9. Full Text Scaling Trends of Monolithic 3-D Complementary Metal-Oxide-Semiconductor Nanoelectromechanical Reconfigurable Logic Circuits
by Ko, Ji Wang and Baek, Gwangryeol and Choi, Woo Young
IEEE transactions on electron devices, ISSN 0018-9383, 09/2020, Volume 67, Issue 9, pp. 3861 - 3867
reconfigurable logic (RL) circuits | NEM memory switch | Switches | monolithic 3-D (M3-D) | Nanoelectromechanical systems | CMOS nanoelectromechanical (CMOS-NEM) | Complementary metal–oxide–semiconductor (CMOS) | Logic gates | CMOS technology | Delays | Mathematical model | Integrated circuit modeling | scaling trend
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10. Multi-voltage CMOS circuit design
by Kursun, Volkan and Friedman, Eby G
2006, 1. Aufl., ISBN 0470010231, xiv, 225
Metal oxide semiconductors, Complementary | Low voltage integrated circuits | Design and construction
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11. All-digital frequency synthesizer in deep-submicron CMOS
by Staszewski, Robert B., 1965 and Balsara, Poras T., 1961
2006, ISBN 9780471772552, xvii, 261
Frequency synthesizers | Metal oxide semiconductors, Complementary | Equipment and supplies | Wireless communication systems | Design and construction
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12. Full Text GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels
by Nakajima, Akira and Kubota, Shunsuke and Tsutsui, Kazuo and Kakushima, Kuniyuki and Wakabayashi, Hitoshi and Iwai, Hiroshi and Nishizawa, Shin-ichi and Ohashi, Hiromichi
IET power electronics, ISSN 1755-4535, 4/2018, Volume 11, Issue 4, pp. 689 - 694
Special Issue: Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016) | gallium compounds | MOSFET | two‐dimensional electron gas | complementary MOS inverter operation | drain currents | electron channels | 2DHG | threshold voltage | gallium nitride‐aluminium gallium nitride‐gallium nitride double heterostructure | N‐channel metal‐oxide‐semiconductor field‐effect transistors | normally off Pch MOSFET | P‐channel metal‐oxide‐semiconductor field‐effect transistors | threshold gate voltages | gallium nitride‐based complementary metal‐oxide‐semiconductor inverter | two‐dimensional hole gas | 2DEG potential | III‐V semiconductors | on‐state resistance | polarisation‐junction platform wafer | 2D electron gas | wide band gap semiconductors | polarisation‐induced holes | normally off Nch MOSFET
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13. Full Text Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)
by Wang, Guilei and Kolahdouz, M and Luo, Jun and Qin, Changliang and Gu, Shihai and Kong, Zhenzhen and Yin, Xiaogen and Xiong, Wenjuan and Zhao, Xuewei and Liu, Jinbiao and Yang, Tao and Li, Junfeng and Yin, Huaxiang and Zhu, Huilong and Wang, Wenwu and Zhao, Chao and Ye, Tianchun and Radamson, Henry H
Journal of materials science. Materials in electronics, ISSN 0957-4522, 2019, Volume 31, Issue 1, pp. 26 - 33
Computer-aided design | Transmission electron microscopes | Epitaxy | Analysis | Complementary metal oxide semiconductors | CMOS | Partial pressure | Metal oxide semiconductors | Computer simulation | Computer aided design--CAD | Energy measurement | Germanium | Fins | Cleaning | Sharpness | Silicon germanides
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14. Full Text Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics
by Lu, Y and Tang, H and Fung, S and Wang, Q and Tsai, J.M and Daneman, M and Boser, B.E and Horsley, D.A
Applied physics letters, ISSN 0003-6951, 06/2015, Volume 106, Issue 26, p. 263503
Physical Sciences | Physics | Science & Technology | Physics, Applied | Transducers | Scanning | Fingerprints | Computer simulation | Micromachining | Interconnections | Sensor arrays | Micromechanics | Finite element method | Integrated circuits | Ultrasonic transducers | Metal oxides | CMOS | Metal oxide semiconductors | Fingerprinting |