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Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, ISSN 1364-503X, 03/2014, Volume 372, Issue 2012, p. 20130100
This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the... 
Avalanche photodiode | Single-photon avalanche diode | Complementary metal oxide semiconductor | CMOS | avalanche photodiode | DESIGN | single-photon avalanche diode | MULTIDISCIPLINARY SCIENCES | DETECTOR | RESOLUTION | SENSOR | TIME | IMAGER | AVALANCHE-DIODE ARRAY | complementary metal oxide semiconductor | 107 | 149
Journal Article
Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, 12/2009, Volume 106, Issue 50, pp. 21035 - 21038
Journal Article
2009, 1. Aufl., ISBN 0470824077, xiii, 249
The book all semiconductor device engineers must read to gain a practical feel for latchup-induced failure to produce lower-cost and higher-density... 
Components, Circuits, Devices and Systems | Reliability | Metal oxide semiconductors, Complementary | Defects
Book
2006, 1. Aufl., ISBN 0470010231, xiv, 225
This book presents an in-depth treatment of various power reduction and speed enhancement techniques based on multiple supply and threshold voltages. A... 
Metal oxide semiconductors, Complementary | Low voltage integrated circuits | Design and construction
Book
2009, IEEE Press Series on Microelectronic Systems, ISBN 9780471731726, Volume 12, xv, 624
A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS... 
Components, Circuits, Devices and Systems | Electricity | Technology | Reliability | Metal oxide semiconductors, Complementary | Microelectronics
Book
Journal of Applied Physics, ISSN 0021-8979, 01/2013, Volume 113, Issue 1, p. 13513
We have analyzed the strain distribution and the photoluminescence in Ge microstructures fabricated by means of a Si-CMOS compatible method. The tensile strain... 
EMISSION | PHYSICS, APPLIED | GERMANIUM | Silicon compounds | Thermal properties | Grain boundaries | Technology application | Usage | Photoluminescence | Mechanical properties | Germanium | Complementary metal oxide semiconductors | Spectral emissivity | Equivalence | Strain distribution | Compatibility | Microstructure | Strain
Journal Article
2009, ISBN 0470112808, xv, 385
This is a practical and highly advanced tutorial on sub-wavelength lithography, stress engineering, and developments in the EDA arena to support designs in the... 
Integrated circuits | Metal oxide semiconductors, Complementary | Nanoelectronics | Design and construction
Book
ACS Nano, ISSN 1936-0851, 11/2013, Volume 7, Issue 11, pp. 10038 - 10047
State-of-the-art CMOS imagers are composed of very small pixels, so it is critical for plasmonic imaging to understand the optical response of finite-size hole... 
CMOS image sensor | hole array color filter | SURFACE-PLASMONS | MATERIALS SCIENCE, MULTIDISCIPLINARY | LIGHT | SUBWAVELENGTH HOLES | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | EFFICIENCY | CHEMISTRY, MULTIDISCIPLINARY | OPTICAL-TRANSMISSION | ARRAYS | CMOS | Metal oxide semiconductors | Imaging | Images | Color | Plasmonics | Sensors | Arrays | Pixels
Journal Article
1989, ISBN 0133879291, xvii, 215
Book