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1. Full Text Complementary Metal Oxide Semiconductor Technology With and On Paper
by Martins, Rodrigo and Nathan, Arokia and Barros, Raquel and Pereira, Luís and Barquinha, Pedro and Correia, Nuno and Costa, Ricardo and Ahnood, Arman and Ferreira, Isabel and Fortunato, Elvira
Advanced Materials, ISSN 0935-9648, 10/2011, Volume 23, Issue 39, pp. 4491 - 4496
A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n‐(In‐Ga‐Zn‐O) and p‐type (SnOx) active oxide semiconductors and... 
flexible electronics | oxide semiconductors | paper electronics | recyclable paper electronics | complementary metal oxide semiconductors (CMOS) | ROOM-TEMPERATURE | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | GATE DIELECTRICS | BEHAVIOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | CHEMISTRY, PHYSICAL | POWER | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | CIRCUITS | THIN-FILM TRANSISTORS | DEVICES | ELECTRONICS | Temperature | Metals - chemistry | Semiconductors | Nanotubes, Carbon - chemistry | Oxides - chemistry | Paper | Tin Compounds - chemistry | Silicon - chemistry | Electrodes | CMOS | Metal oxide semiconductors | Oxides | Dielectrics | Devices
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2. Plasma etching for CMOS devices realization
by Posseme, Nicolas, editor
2017, Electronics engineering, ISBN 1785480960, x, 121 pages
Metal oxide semiconductors, Complementary | Plasma etching | Design and construction
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3. Full Text Single-Photon imaging in complementary metal oxide semiconductor processes
by Charbon, E
Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, ISSN 1364-503X, 03/2014, Volume 372, Issue 2012, p. 20130100
This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the... 
Avalanche photodiode | Single-photon avalanche diode | Complementary metal oxide semiconductor | CMOS | avalanche photodiode | DESIGN | single-photon avalanche diode | MULTIDISCIPLINARY SCIENCES | DETECTOR | RESOLUTION | SENSOR | TIME | IMAGER | AVALANCHE-DIODE ARRAY | complementary metal oxide semiconductor | 107 | 149
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4. Full Text High-Performance WSe 2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
by Yu, Lili and Zubair, Ahmad and Santos, Elton J. G and Zhang, Xu and Lin, Yuxuan and Zhang, Yuhao and Palacios, Tomás
Nano Letters, ISSN 1530-6984, 08/2015, Volume 15, Issue 8, pp. 4928 - 4934
integrated circuits | low power electronics | CMOS electronics | Transition metal dichalcogenides | air stable doping | complementary logic
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5. Full Text High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits
by Yu, Lili and Zubair, Ahmad and Santos, Elton J. G and Zhang, Xu and Lin, Yuxuan and Zhang, Yuhao and Palacios, Tomás
Nano Letters, ISSN 1530-6984, 08/2015, Volume 15, Issue 8, pp. 4928 - 4934
Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film... 
LAYER GRAPHENE | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | integrated circuits | low power electronics | MATERIALS SCIENCE, MULTIDISCIPLINARY | CMOS electronics | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | Transition metal dichalcogenides | complementary logic | CHEMISTRY, MULTIDISCIPLINARY | air stable doping | Selenium Compounds - chemistry | Tungsten Compounds - chemistry | Metals - chemistry | Semiconductors | Equipment Design | Oxides - chemistry
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6. ULSI front-end technology
: covering from the first semiconductor paper to CMOS FINFET technology
by Lau, W. S. author
2017, ISBN 9789813222151, xi, 234 pages
Semiconductors
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7. Full Text Vertically Integrated, Three-Dimensional Nanowire Complementary Metal-Oxide-Semiconductor Circuits
by SungWoo Nam and Xiaocheng Jiang and Qihua Xiong and Donhee Ham and Charles M. Lieber
Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, 12/2009, Volume 106, Issue 50, pp. 21035 - 21038
Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density,... 
Integrated circuits | Electrodes | Electric potential | Semiconductors | Materials | Carbon nanotubes | Inverters | Nanowires | Transistors | Oscillators | Multilayer assembly | Nanoelectronics | FILMS | integrated circuits | CARBON NANOTUBE | HETEROSTRUCTURES | MULTIDISCIPLINARY SCIENCES | nanoelectronics | DEVICES | FIELD-EFFECT TRANSISTORS | ELECTRONICS | ARRAYS | multilayer assembly | Integrated circuit fabrication | Design and construction | Research | Complementary metal oxide semiconductors | Methods | Nanotechnology | Physical Sciences
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8. Transient-induced latchup in CMOS integrated circuits
by Ker, Ming-Dou and Books24x7, Inc
2009, 1. Aufl., ISBN 0470824077, xiii, 249
The book all semiconductor device engineers must read to gain a practical feel for latchup-induced failure to produce lower-cost and higher-density... 
Components, Circuits, Devices and Systems | Reliability | Metal oxide semiconductors, Complementary | Defects
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9. Full Text Defect state passivation at III-V oxide interfaces for complementary metal-oxide-semiconductor devices
by Robertson, J and Guo, Y and Lin, L
Journal of Applied Physics, ISSN 0021-8979, 03/2015, Volume 117, Issue 11, p. 112806
The paper describes the reasons for the greater difficulty in the passivation of interface defects of III-V semiconductors like GaAs. These include the more... 
INSULATOR-SEMICONDUCTOR | PHYSICS, APPLIED | SURFACE PASSIVATION | ENHANCEMENT | GAP STATES | ATOMIC-LAYER-DEPOSITION | SCANNING-TUNNELING-MICROSCOPY | MODEL | COMPOUND SEMICONDUCTORS | FIELD-EFFECT TRANSISTORS | SCHOTTKY-BARRIER | Gallium arsenide | Metallic oxides | Chemical properties | NITRIDATION | SEMICONDUCTOR DEVICES | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | PASSIVATION | SUBSTRATES | DIFFUSION BARRIERS | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | ELECTRONIC STRUCTURE | ENERGY GAP | CHEMICAL BONDS | METALS | GALLIUM ARSENIDES | INTERFACES | OXIDES | CRYSTAL DEFECTS | SEMICONDUCTOR MATERIALS | SURFACES
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10. Multi-voltage CMOS circuit design
by Kursun, Volkan and Friedman, Eby G
2006, 1. Aufl., ISBN 0470010231, xiv, 225
This book presents an in-depth treatment of various power reduction and speed enhancement techniques based on multiple supply and threshold voltages. A... 
Metal oxide semiconductors, Complementary | Low voltage integrated circuits | Design and construction
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11. Reliability wearout mechanisms in advanced CMOS technologies
by Strong, Alvin W and Wu, Ernest Y and Vollertsen, Rolf-Peter and Sune, Jordi and Rosa, Giuseppe La and Sullivan, Timothy D and Rauch, Stewart E
2009, IEEE Press Series on Microelectronic Systems, ISBN 9780471731726, Volume 12, xv, 624
A comprehensive treatment of all aspects of CMOS reliability wearout mechanisms This book covers everything students and professionals need to know about CMOS... 
Components, Circuits, Devices and Systems | Electricity | Technology | Reliability | Metal oxide semiconductors, Complementary | Microelectronics
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12. Nano-CMOS gate dielectric engineering
by Wong, Hei
2012, ISBN 1439849595, xiv, 234
Metal oxide semiconductors, Complementary | Dielectrics | Design and construction | Materials | Gate array circuits | Nanoelectronics
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13. Full Text Label-Free Electrical Detection of Cardiac Biomarker with Complementary Metal-Oxide Semiconductor-Compatible Silicon Nanowire Sensor Arrays
by Chua, Jay Huiyi and Chee, Ru-Ern and Agarwal, Ajay and Wong, She Mein and Zhang, Guo-Jun
Analytical Chemistry, ISSN 0003-2700, 08/2009, Volume 81, Issue 15, pp. 6266 - 6271
Arrays of highly ordered silicon nanowire (SiNW) clusters are fabricated using complementary metal-oxide semiconductor (CMOS) field effect... 
CHEMISTRY, ANALYTICAL | BIOSENSORS | SPECIFICITY | NANOSENSORS | INJURY | TROPONIN-T | DNA HYBRIDIZATION | MOLECULES | Nanowires - chemistry | Troponin T - blood | Semiconductors | Troponin T - analysis | Humans | Sensitivity and Specificity | Biomarkers - analysis | Biosensing Techniques - instrumentation | Biosensing Techniques - methods | Silicon - chemistry | Nanotechnology | Measurement | Usage | Physiological aspects | Research | Diagnosis | Biological markers | Identification and classification | Complementary metal oxide semiconductors | Necrosis
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14. Full Text Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
by Capellini, G and Kozlowski, G and Yamamoto, Y and Lisker, M and Wenger, C and Niu, G and Zaumseil, P and Tillack, B and Ghrib, A and De Kersauson, M and El Kurdi, M and Boucaud, P and Schroeder, T
Journal of Applied Physics, ISSN 0021-8979, 01/2013, Volume 113, Issue 1, p. 13513
We have analyzed the strain distribution and the photoluminescence in Ge microstructures fabricated by means of a Si-CMOS compatible method. The tensile strain... 
EMISSION | PHYSICS, APPLIED | GERMANIUM | Silicon compounds | Thermal properties | Grain boundaries | Technology application | Usage | Photoluminescence | Mechanical properties | Germanium | Complementary metal oxide semiconductors | Spectral emissivity | Equivalence | Strain distribution | Compatibility | Microstructure | Strain
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15. All-digital frequency synthesizer in deep-submicron CMOS
by Staszewski, Robert Bogdan and Balasara, Poras T
2006, ISBN 9780471772552, xvii, 261
Frequency synthesizers | Metal oxide semiconductors, Complementary | Equipment and supplies | Wireless communication systems | Design and construction
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16. Low power CMOS design
by Chandrakasan, Anantha P and Brodersen, Robert W., 1945
1998, ISBN 9780780334298, xii, 629
Metal oxide semiconductors, Complementary | Data processing | Computer-aided design | Design and construction | Low voltage integrated circuits | Digital integrated circuits | Components, Circuits, Devices and Systems | Power, Energy and Industry Applications
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17. Nano-CMOS design for manufacturabililty
: robust circuit and physical design for sub-65nm technology nodes
by Wong, Ban P and Mittal, Anurag and Kahng, Andrew and Moroz, Victor and Starr, Greg W and Zach, Franz and Books24x7, Inc
2009, ISBN 0470112808, xv, 385
This is a practical and highly advanced tutorial on sub-wavelength lithography, stress engineering, and developments in the EDA arena to support designs in the... 
Integrated circuits | Metal oxide semiconductors, Complementary | Nanoelectronics | Design and construction
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18. Full Text Color Imaging via Nearest Neighbor Hole Coupling in Plasmonic Color Filters Integrated onto a Complementary Metal-Oxide Semiconductor Image Sensor
by Burgos, Stanley P and Yokogawa, Sozo and Atwater, Harry A
ACS Nano, ISSN 1936-0851, 11/2013, Volume 7, Issue 11, pp. 10038 - 10047
State-of-the-art CMOS imagers are composed of very small pixels, so it is critical for plasmonic imaging to understand the optical response of finite-size hole... 
CMOS image sensor | hole array color filter | SURFACE-PLASMONS | MATERIALS SCIENCE, MULTIDISCIPLINARY | LIGHT | SUBWAVELENGTH HOLES | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | EFFICIENCY | CHEMISTRY, MULTIDISCIPLINARY | OPTICAL-TRANSMISSION | ARRAYS | CMOS | Metal oxide semiconductors | Imaging | Images | Color | Plasmonics | Sensors | Arrays | Pixels
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19. High-speed (HC/HCT) CMOS guide
by Helms, Harry L
1989, ISBN 0133879291, xvii, 215
Metal oxide semiconductors, Complementary
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20. Full Text Advances in Complementary-Metal-Oxide-Semiconductor-Based Integrated Biosensor Arrays
by Arya, Sunil K and Wong, Chee Chung and Jeon, Yong Joon and Bansal, Tushar and Park, Mi Kyoung
Chemical Reviews, ISSN 0009-2665, 2015, Volume 115, Issue 11, pp. 5116 - 5158
IMAGE SENSOR | IN-VITRO | PIEZORESISTIVE MICROCANTILEVERS | CAPACITIVE BIOSENSOR | CMOS MICROELECTRODE ARRAY | ELECTRONIC DETECTION | SENSOR ARRAY | DNA HYBRIDIZATION | CHEMISTRY, MULTIDISCIPLINARY | MULTIELECTRODE ARRAYS | REAL-TIME | Metals - chemistry | Semiconductors | Oxides - chemistry | Biosensing Techniques | Usage | Research | Biosensors | Complementary metal oxide semiconductors
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