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Journal of applied physics, ISSN 0021-8979, 03/2015, Volume 117, Issue 11, p. 112806
Physical Sciences | Physics | Science & Technology | Physics, Applied | Gallium arsenide | Metallic oxides | Chemical properties | Electronic structure | Metal oxide semiconductors | Semiconductor devices | Diffusion barriers | Configurations | Passivity | Substrates | Defects | NITRIDATION | SEMICONDUCTOR DEVICES | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | PASSIVATION | SUBSTRATES | DIFFUSION BARRIERS | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | ELECTRONIC STRUCTURE | ENERGY GAP | CHEMICAL BONDS | METALS | GALLIUM ARSENIDES | INTERFACES | OXIDES | CRYSTAL DEFECTS | SEMICONDUCTOR MATERIALS | SURFACES
Journal Article
Advanced materials (Weinheim), ISSN 0935-9648, 10/2011, Volume 23, Issue 39, pp. 4491 - 4496
flexible electronics | oxide semiconductors | paper electronics | recyclable paper electronics | complementary metal oxide semiconductors (CMOS) | Materials Science | Materials Science, Multidisciplinary | Physics, Condensed Matter | Science & Technology - Other Topics | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Physical Sciences | Chemistry | Nanoscience & Nanotechnology | Technology | Chemistry, Multidisciplinary | Temperature | Metals - chemistry | Semiconductors | Nanotubes, Carbon - chemistry | Oxides - chemistry | Paper | Tin Compounds - chemistry | Silicon - chemistry | Electrodes | CMOS | Metal oxide semiconductors | Oxides | Dielectrics | Devices | Index Medicus
Journal Article
Chemical reviews, ISSN 0009-2665, 2015, Volume 115, Issue 11, pp. 5116 - 5158
Journal Article
Nano letters, ISSN 1530-6984, 08/2015, Volume 15, Issue 8, pp. 4928 - 4934
Materials Science | Materials Science, Multidisciplinary | Physics, Condensed Matter | Science & Technology - Other Topics | Chemistry, Physical | Physics | Science & Technology | Physics, Applied | Physical Sciences | Chemistry | Nanoscience & Nanotechnology | Technology | Chemistry, Multidisciplinary | Selenium Compounds - chemistry | Tungsten Compounds - chemistry | Metals - chemistry | Semiconductors | Equipment Design | Oxides - chemistry | Index Medicus
Journal Article
2009, 1. Aufl., ISBN 0470824077, xiii, 249
Book
IET circuits, devices & systems, ISSN 1751-858X, 11/2019, Volume 13, Issue 8, pp. 1181 - 1186
Journal Article
2009, IEEE Press series on microelectronic systems, ISBN 9780471731726, Volume 12, xv, 624
Book
Applied physics letters, ISSN 0003-6951, 07/2015, Volume 107, Issue 4, p. 41104
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 09/2020, Volume 67, Issue 9, pp. 3861 - 3867
reconfigurable logic (RL) circuits | NEM memory switch | Switches | monolithic 3-D (M3-D) | Nanoelectromechanical systems | CMOS nanoelectromechanical (CMOS-NEM) | Complementary metal–oxide–semiconductor (CMOS) | Logic gates | CMOS technology | Delays | Mathematical model | Integrated circuit modeling | scaling trend
Journal Article
2006, 1. Aufl., ISBN 0470010231, xiv, 225
Book
2006, ISBN 9780471772552, xvii, 261
Book
IET power electronics, ISSN 1755-4535, 4/2018, Volume 11, Issue 4, pp. 689 - 694
Special Issue: Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016) | gallium compounds | MOSFET | two‐dimensional electron gas | complementary MOS inverter operation | drain currents | electron channels | 2DHG | threshold voltage | gallium nitride‐aluminium gallium nitride‐gallium nitride double heterostructure | N‐channel metal‐oxide‐semiconductor field‐effect transistors | normally off Pch MOSFET | P‐channel metal‐oxide‐semiconductor field‐effect transistors | threshold gate voltages | gallium nitride‐based complementary metal‐oxide‐semiconductor inverter | two‐dimensional hole gas | 2DEG potential | III‐V semiconductors | on‐state resistance | polarisation‐junction platform wafer | 2D electron gas | wide band gap semiconductors | polarisation‐induced holes | normally off Nch MOSFET
Journal Article
Journal of materials science. Materials in electronics, ISSN 0957-4522, 2019, Volume 31, Issue 1, pp. 26 - 33
Computer-aided design | Transmission electron microscopes | Epitaxy | Analysis | Complementary metal oxide semiconductors | CMOS | Partial pressure | Metal oxide semiconductors | Computer simulation | Computer aided design--CAD | Energy measurement | Germanium | Fins | Cleaning | Sharpness | Silicon germanides
Journal Article
Applied physics letters, ISSN 0003-6951, 06/2015, Volume 106, Issue 26, p. 263503
Physical Sciences | Physics | Science & Technology | Physics, Applied | Transducers | Scanning | Fingerprints | Computer simulation | Micromachining | Interconnections | Sensor arrays | Micromechanics | Finite element method | Integrated circuits | Ultrasonic transducers | Metal oxides | CMOS | Metal oxide semiconductors | Fingerprinting |