X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (494) 494
Patent (443) 443
Conference Proceeding (47) 47
Publication (33) 33
Dissertation (16) 16
Book Chapter (13) 13
Government Document (5) 5
Book / eBook (2) 2
Book Review (1) 1
Report (1) 1
Web Resource (1) 1
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
insulators (466) 466
semiconductor devices (461) 461
conductors (445) 445
basic electric elements (443) 443
cables (443) 443
electric solid state devices not otherwise provided for (443) 443
electricity (443) 443
selection of materials for their conductive, insulating ordielectric properties (443) 443
chemistry (426) 426
metallurgy (419) 419
ferrous or non-ferrous alloys (287) 287
treatment of alloys or non-ferrous metals (287) 287
alloys (256) 256
changing the physical structure of non-ferrous metals andnon-ferrous alloys (220) 220
performing operations (195) 195
transporting (195) 195
physics, applied (173) 173
inorganic chemistry (136) 136
compounds containing metals not covered by subclassesc01d or c01f (123) 123
metal-insulator-semiconductor (111) 111
engineering, electrical & electronic (110) 110
general tagging of cross-sectional technologies spanning over several sections of the ipc (109) 109
general tagging of new technological developments (109) 109
technical subjects covered by former uspc cross-reference art collections [xracs] and digests (109) 109
materials science, multidisciplinary (106) 106
physics, condensed matter (99) 99
chemical surface treatment (95) 95
cladding or plating by soldering or welding (95) 95
coating by vacuum evaporation, by sputtering, by ion implantationor by chemical vapour deposition, in general (95) 95
coating material with metallic material (95) 95
coating metallic material (95) 95
cutting by applying heat locally, e.g. flame cutting (95) 95
diffusion treatment of metallic material (95) 95
inhibiting corrosion of metallic material or incrustation ingeneral (95) 95
machine tools (95) 95
metal-working not otherwise provided for (95) 95
soldering or unsoldering (95) 95
welding (95) 95
working by laser beam (95) 95
metal-insulator-semiconductor structures (93) 93
apparatus therefor (88) 88
coating by vacuum evaporation, by sputtering, by ionimplantation or by chemical vapour deposition, in general (85) 85
surface treatment of metallic material by diffusion into thesurface, by chemical conversion or substitution (85) 85
electric techniques not otherwise provided for (78) 78
technical subjects covered by former uspc (78) 78
metal insulator semiconductor structures (73) 73
silicon (72) 72
casings or constructional details of electric apparatus (67) 67
manufacture of assemblages of electrical components (67) 67
printed circuits (67) 67
after-treatment of single crystals or a homogeneouspolycrystalline material with defined structure (66) 66
crystal growth (66) 66
production of a homogeneous polycrystalline material withdefined structure (66) 66
refining by zone-melting of material (66) 66
single crystals or homogeneous polycrystalline material withdefined structure (66) 66
single-crystal-growth (66) 66
unidirectional solidification of eutectic material orunidirectional demixing of eutectoid material (66) 66
technical subjects covered by former us classification (61) 61
metal-insulator-semiconductor structure (55) 55
mis-struktur (54) 54
indexing scheme relating to structural and physical aspects ofsolid inorganic compounds (53) 53
physics (53) 53
capacitors (51) 51
casting (51) 51
powder metallurgy (51) 51
mechanical metal-working without essentially removingmaterial (49) 49
punching metal (49) 49
inductances (48) 48
magnets (48) 48
selection of materials for their magnetic properties (48) 48
transformers (48) 48
making metallic powder (46) 46
manufacture of articles from metallic powder (46) 46
working metallic powder (46) 46
devices (45) 45
capacitance (44) 44
ceramics (43) 43
artificial stone (42) 42
cements (42) 42
compositions thereof, e.g. mortars, concrete or like buildingmaterials (42) 42
concrete (42) 42
lime, magnesia (42) 42
refractories (42) 42
slag (42) 42
treatment of natural stone (42) 42
layered products (41) 41
layered products, i.e. products built-up of strata of flat ornon-flat, e.g. cellular or honeycomb, form (41) 41
nanoscience & nanotechnology (37) 37
transistors (37) 37
optics (36) 36
semiconductors (36) 36
technologies or applications for mitigation or adaptation againstclimate change (36) 36
thin films (36) 36
current collectors (34) 34
line connectors (34) 34
chemistry, physical (33) 33
gan (32) 32
auxiliary operations used in connection with metal-workingwithout essentially removing material (31) 31
manufacture of metal sheets, wire, rods, tubes or profiles,otherwise than by rolling (31) 31
reduction of greenhouse gas [ghg] emissions, related to energygeneration, transmission or distribution (30) 30
more...
Library Location Library Location
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Journal of Alloys and Compounds, ISSN 0925-8388, 2011, Volume 509, Issue 31, pp. 8001 - 8007
► Electrical properties of Au/n-GaN MS and Au/SiO 2/n-GaN MIS diodes have been investigated. ► It is found that the Schottky barrier height increases and... 
Electrical characteristics | Metal–insulator–semiconductor | n-Type GaN | Interface state density | DLTS measurements | Metal–semiconductor | Metal-insulator- semiconductor | Metal-semiconductor
Journal Article
Infrared Physics and Technology, ISSN 1350-4495, 12/2017, Volume 87, pp. 129 - 133
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 01/2017, Volume 50, Issue 6, p. 65104
In this study we present a method for measuring bulk traps using deep-level spectroscopy techniques in metal-insulator-semiconductor (MIS) structures. We will... 
metal-insulator-semiconductor | spectroscopy | characterization | simulation | defects | deep levels | PHYSICS, APPLIED | ELECTRICAL CHARACTERIZATION | TRAPS | DLTS | INTERFACE STATES | MOS STRUCTURES | BAND | GROWN ZNO | TRANSIENT SPECTROSCOPY | FOURIER SPECTROSCOPY
Journal Article
physica status solidi (b), ISSN 0370-1972, 10/2018, Volume 255, Issue 10, pp. 1700634 - n/a
Silicon nanocrystals have been recently investigated for potential applications in modern silicon optoelectronics and photonics. In this work, co‐doped silicon... 
electrical characterization | memory devices | metal–insulator–semiconductor structure | high‐k dielectric | silicon nanocrystals | high-k dielectric | PHYSICS, CONDENSED MATTER | OXIDE | metal-insulator-semiconductor structure | SMALL-SIGNAL ADMITTANCE | PHOTONICS | PHOTOVOLTAICS | LAYERS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2018, Volume 65, Issue 3, pp. 867 - 873
Journal Article
JOURNAL OF ALLOYS AND COMPOUNDS, ISSN 0925-8388, 08/2011, Volume 509, Issue 31, pp. 8001 - 8007
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 11/2015, Volume 147, pp. 335 - 338
[Display omitted] •CF in Ni/HfO2/Si RS structures are analysed at the nanoscale by means of CAFM.•Differences in the CF conductivity are measured depending on... 
Metal–insulator–semiconductor (MIS) | CAFM | Resistive switching | PHYSICS, APPLIED | MEMORY | Metal-insulator-semiconductor (MIS) | DEVICES | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
physica status solidi (c), ISSN 1862-6351, 07/2016, Volume 13, Issue 7‐9, pp. 647 - 650
The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxial MBE n (p)‐Hg0.78Cd0.22Te with insulator coating... 
metal‐insulator semiconductor structure | HgCdTe | aluminium oxide | admittance | metal-insulator semiconductor structure
Journal Article
Solid State Electronics, ISSN 0038-1101, 09/2019, Volume 159, pp. 157 - 164
Co-doped Si-NCs have been introduced into MIS structures gate dielectric layers. The fabricated test devices were characterized by means of stress-and-sense... 
Silicon nanocrystal | Electrical characterization | Metal–insulator semiconductor structure | High-k dielectric | Memory | ISSUES | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | Metal-insulator semiconductor structure | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 05/2015, Volume 147, pp. 335 - 338
Conductive filaments (CFs) in Ni/HfO 2 /Si resistive switching structures are analysed at the nanoscale by means of Conductive Atomic Force Microscopy (CAFM).... 
Resistive switching | Metal-insulator-semiconductor (MIS) | CAFM
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.