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Sensors & Actuators: B. Chemical, ISSN 0925-4005, 02/2015, Volume 207, pp. 313 - 320
...s.•The increase of sensor resistance can be due to the Mg acceptor doping in In2O3 NTs.•Mg-In2O3 NTs show an enhanced sensitivity and improved selectivity toward H2S... 
Oxygen vacancies | In2O3 nanotubes | Mg dopants | Gas sensors | ELECTROCHEMISTRY | CHEMISTRY, ANALYTICAL | PERFORMANCE | SENSORS | ADDITIVES | INSTRUMENTS & INSTRUMENTATION | TEMPERATURE | NOX | METAL-OXIDES | Ethanol | Nanotubes | Electrospinning | Ethyl alcohol | Sensors | Indium oxides | Magnesium | Operating temperature
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 10/2018, Volume 547, pp. 38 - 47
.... It was found that MgAl acceptor is easier to be formed than either of BeAl and CaAl due to its lowest formation energy in CuAlO2... 
Formation energy | Electronic structure | Alkaline earth doping | First-principles calculation | CuAlO2 | Dual-acceptor co-doping | CuAlO | PHYSICS, CONDENSED MATTER | SEMICONDUCTOR | OPTICAL-PROPERTIES | TRANSPARENT THIN-FILMS | AL | TEMPERATURE | MG | DELAFOSSITE CUALO2 | CA
Journal Article
Applied surface science, ISSN 0169-4332, 2019, Volume 488, pp. 688 - 695
... reasonably good p-doping control. Here, an effect of acceptor activation by post-growth treatments, that is conventional and rapid thermal annealing, was studied, revealing that while selecting inappropriate conditions p-type AlGaN... 
Annealing | Epitaxy | III-nitride | Doping | AlGaN | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ALN | SEMICONDUCTORS | CHEMISTRY, PHYSICAL | MG-DOPED GAN | PYRAMIDAL DEFECTS | INVERSION | MOCVD | LOW-RESISTIVITY | LAYERS | ALUMINUM NITRIDE | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Journal of the American Ceramic Society, ISSN 0002-7820, 12/2009, Volume 92, Issue 12, pp. 2944 - 2952
The effect of acceptor concentration in (Mg)‐doped BaTiO3 on the resistance degradation behavior was contrasted between coarse‐ and fine‐grain samples with ∼90 and ∼0.8 μ... 
ELECTROCERAMICS | TEMPERATURE | DEFECT CHEMISTRY | BOUNDARY CONDUCTIVITY | PEROVSKITE-TYPE TITANATES | IMPEDANCE/DIELECTRIC SPECTROSCOPY | BARIUM-TITANATE | MATERIALS SCIENCE, CERAMICS | DC ELECTRICAL DEGRADATION | CHARGE | MG CONCENTRATION
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2007, Volume 91, Issue 13, pp. 132105 - 132105-2
Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors... 
ACTIVATION | PHYSICS, APPLIED | CARBON | MG-DOPED GAN
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 09/2017, Volume 109, pp. 758 - 762
The activation energy for Mg acceptor in AlxGa1-xN alloys is investigated. The modified effective mass model is used to describe the activation energy for Mg acceptor in AlxGa1-xN alloys... 
AlGaN alloy | Mg-doped | Effective mass model | Activation energy | BAND PARAMETERS | VAPOR-PHASE EPITAXY | PHYSICS, CONDENSED MATTER | DEFECTS | SEMICONDUCTORS | ELECTRICAL-PROPERTIES | MOCVD | GAN | ALGAN
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 02/2017, Volume 102, pp. 40 - 44
The activation energy for Mg acceptor in InxGa1-xN alloys is investigated. It is found that there are three factors to influence the activation energy for Mg acceptor... 
Mg-doped | Activation energy | InGaN alloy | Hydrogen atom like model | PHYSICS, CONDENSED MATTER | DEFECTS | Analysis | Alloys | Hydrogen
Journal Article
physica status solidi c, ISSN 1862-6351, 04/2015, Volume 12, Issue 4-5, pp. 357 - 360
High hole concentrations in AlxGa1‐xN become increasingly difficult to obtain as the concentration of Al increases. It is well known in GaN and related alloys... 
Mg‐doping | activation | EPR | AlGaN | Dislocation density | Annealing | Threading dislocations | Aluminum | Magnesium | Organic chemicals | Electron paramagnetic resonance | Chemical vapor deposition
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2005, Volume 98, Issue 3, pp. 033508 - 033508-8
A dominating donor-acceptor pair (DAP) emission at about 3.27 eV is observed in the photoluminescence and cathodoluminescence spectra of intentionally undoped mass-transport (MT... 
VAPOR-PHASE EPITAXY | DEFECTS | PHYSICS, APPLIED | ALN | LUMINESCENCE | PHOTOLUMINESCENCE INTENSITIES | MOLECULAR-BEAM EPITAXY | VACANCIES | MG-DOPED GAN | Nitrides | Spectra | Research | Gallium compounds | Electron donor-acceptor complexes | Electric properties | Fysik | Physical Sciences
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 10/2014, Volume 90, Issue 16
The behavior of cation substitutional hole doping in GaN and ZnO is investigated using hybrid density functional calculations. Our results reveal that Mg... 
EPITAXY | PHYSICS, CONDENSED MATTER | DEFECTS | ENERGY | ZINC OXIDE | ZONE | CRYSTALS | MG-DOPED GAN | LITHIUM | LI
Journal Article
Physical review. B, Condensed matter and materials physics, ISSN 1550-235X, 2013, Volume 87, Issue 23
In recent years there have been several theoretical and experimental investigations concerned with the detailed structure of the acceptor states in Mg-doped GaN... 
SHALLOW ACCEPTOR | PHYSICS, CONDENSED MATTER | MG-DOPED GAN | SEMICONDUCTORS
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 11/2015, Volume 44, Issue 11, pp. 4139 - 4143
...) spectroscopy to investigate a defect related to the neutral Mg acceptor. The amount and symmetry of neutral Mg in MOCVD-grown Al x Ga1−x N with x = 0... 
Solid State Physics | p -type | magnetic resonance | GaN | Optical and Electronic Materials | Electronics and Microelectronics, Instrumentation | Characterization and Evaluation of Materials | Material Science | Nitride | p-type | Mg | nitride | MATERIALS SCIENCE
Journal Article
Jpn J Appl Phys, ISSN 0021-4922, 8/2013, Volume 52, Issue 8, pp. 08JJ04 - 08JJ04-5
We explore the properties of group-II acceptors in GaN by performing hybrid density functional calculations. We find that Mg \text... 
AUGMENTED-WAVE METHOD | BERYLLIUM | MAGNESIUM | ACTIVATION | PHYSICS, APPLIED | PHOTOLUMINESCENCE | LUMINESCENCE | MOLECULAR-BEAM EPITAXY | MG-DOPED GAN | Wurtzite | Ionization | Mathematical analysis | Gallium nitrides | Optical properties | Lattices | Luminescence | Distortion | Density
Journal Article
Sensors and Actuators, B: Chemical, ISSN 0925-4005, 2015, Volume 207, pp. 313 - 320
.... Despite the role of substitutional Mg in In 2 O 3 as an acceptor, the Mg-In 2 O 3 NTs have shown n-type conductivity in H 2 S and ethanol, respectively... 
Oxygen vacancies | In 2 O 3 nanotubes | Gas sensors | Mg dopants
Journal Article
Journal of Theoretical and Computational Chemistry, ISSN 0219-6336, 09/2013, Volume 12, Issue 6, pp. 1350046 - 1350011
Some selected acceptor-Be hydrocarbon complexes have been considered for evaluation of second hyperpolarizability at different DFT functional... 
second hyperpolarizability | co-operativity | effect of basis set | effect of Mg and Ca | Be-complexes | DESIGN | NONLINEAR-OPTICAL PROPERTIES | CHROMOPHORES | STATIC 1ST | CHEMISTRY, MULTIDISCIPLINARY | Beryllium
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2010, Volume 107, Issue 10, p. 103721
Bulk electrical conductivity of acceptor (Mg)-doped BaTiO3 ceramics were evaluated via an impedance spectroscopy analysis for materials with Mg concentrations up to 0.6 mol... 
GRAIN-BOUNDARIES | MIXED CONDUCTORS | PHYSICS, APPLIED | TEMPERATURE DEFECT CHEMISTRY | DOPED TITANATES | HOPPING CONDUCTION | DIELECTRIC-PROPERTIES | IMPEDANCE | RESISTANCE DEGRADATION BEHAVIOR | MG CONCENTRATION | CERAMICS
Journal Article
Journal of the American Ceramic Society, ISSN 0002-7820, 07/2010, Volume 93, Issue 7, pp. 1950 - 1956
Thermally stimulated depolarization current (TSDC) of acceptor (Mg)‐doped BaTiO3 ceramics was analyzed for submicrometer fine grain specimens... 
BEHAVIOR | SIZE | DEFECT CHEMISTRY | PEROVSKITE-TYPE TITANATES | CURRENT TSC | CAPACITORS | MATERIALS SCIENCE, CERAMICS | DC ELECTRICAL DEGRADATION | STRONTIUM-TITANATE | MG CONCENTRATION | Degradation | Polarization | Correlation | Grains | Thermally stimulated depolarization current | Barium titanates | Ceramics
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 08/2010, Volume 97, Issue 6, p. 62907
... adjacent to acceptor-doped Ca2+ ions. (C) 2010 American Institute of Physics. [doi:10.1063/1.3476355] 
ceramics | PHYSICS, APPLIED | BATIO3 CERAMICS | barium compounds | electrical conductivity | RESISTANCE DEGRADATION BEHAVIOR | MG CONCENTRATION
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2002, Volume 81, Issue 21, pp. 3990 - 3992
We have investigated electrically the acceptor levels that are present in Be-implanted GaN... 
PHYSICS, APPLIED | MG-DOPED GAN | COIMPLANTATION
Journal Article
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