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ACS PHOTONICS, ISSN 2330-4022, 08/2015, Volume 2, Issue 8, pp. 1175 - 1182
We demonstrate a hybrid silicon vanadium dioxide (Si-VO2) electro-optic modulator that enables direct probing of both the electrically triggered... 
PHYSICS, CONDENSED MATTER | METAL-INSULATOR-TRANSITION | PHYSICS, APPLIED | OXIDE | FIELD | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOTT TRANSITION | NANOSCIENCE & NANOTECHNOLOGY | electro-optic modulation | FILMS | PHASE-TRANSITION | DEVICES | vanadium dioxide | OPTICS | metal-to-insulator transition | photonics | MODULATION
Journal Article
Journal of Physical Chemistry C, ISSN 1932-7447, 02/2015, Volume 119, Issue 6, pp. 2983 - 2988
Resistive random-access memory (ReRAM) made of organic materials has recently received much attention for application in flexible devices. In the latter,... 
FIELD | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | ORGANIC NONVOLATILE MEMORY | TRANSITION | DITHIOLENE COMPLEXES | INTEGRATION | BISTABILITY | NANOSCALE | AVALANCHE BREAKDOWN | THIN-FILM | EFFICIENT | Organic chemistry | Chemical Sciences
Journal Article
Journal Article
Journal of Low Temperature Physics, ISSN 0022-2291, 12/2011, Volume 165, Issue 5, pp. 195 - 212
Journal Article
Progress in Materials Science, ISSN 0079-6425, 1969, Volume 14, Issue 4, pp. 175 - 242
This review covers experimental and theoretical work on the properties of liquid metals under pressure, both at higher than normal densities near the normal... 
Journal Article
1969, ISBN 0521071062, 2 v.
The Physics of Metals is an advanced treatise written by a team of experts. It presents an authoritative account of selected topics in a major field of modern... 
Physical metallurgy
Book
Pramana, ISSN 0304-4289, 02/1979, Volume 12, Issue 2, pp. 151 - 157
Journal Article
1985, Institute for Amorphous Studies series., ISBN 0306420767, xvi, 564
Book
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, ISSN 0021-4922, 1988, Volume 27, Issue 10 A, pp. 1835 - L1838
Journal Article
International Journal of Modern Physics B, ISSN 0217-9792, 10/1988, Volume 2, Issue 5, pp. 539 - 554
The doped Mott insulator has, under some conditions, qualitatively different behaviour as compared to an ordinary Fermi liquid conductor. This difference is... 
I. ONE-BAND HUBBARD MODEL FOR HIGH Tc SUPERCONDUCTORS
Journal Article
Journal of the Physical Society of Japan, ISSN 0031-9015, 1989, Volume 58, Issue 8, pp. 2826 - 2835
We study the correlation effect on the electronic states in the uncompensated Si:P system from the intermediate to the critical concentration region, by the... 
MCSCF method | shallow impurity level | spin pair | Anderson localization | Mott transition | Si:P | electron correlation | metal-insulator transition | Metal-insulator transition | Spin pair | Shallow impurity level | Electron correlation
Journal Article
Journal of the Physical Society of Japan, ISSN 0031-9015, 1990, Volume 59, Issue 8, pp. 2931 - 2940
Single hole propagation doped into a quantum antiferromagnet is studied taking into account the effect of finite exchange interaction up to the first order... 
string effect | Mott insulator | moment method | Heisenberg antiferromagnet | spin wave approximation | theory | hole doping | density of states
Journal Article
Journal Article
Progress of Theoretical Physics Supplement, ISSN 0375-9687, 1990, Issue 101, pp. 231 - 270
In this paper we study the valence electronic structure of 3d transition metal compounds in an Anderson impurity approximation. Using simplified models we... 
CE COMPOUNDS | SPECTROSCOPY | M4,5VV AUGER SPECTRUM | NIO | X-RAY PHOTOEMISSION | NICKEL DIHALIDES | MODEL | VALENCE-BAND PHOTOEMISSION | DILUTE PALLADIUM | MOTT INSULATORS | PHYSICS, MULTIDISCIPLINARY
Journal Article
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