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Applied Physics Letters, ISSN 0003-6951, 04/2013, Volume 102, Issue 15, p. 152106
Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear... 
N-TYPE | PHYSICS, APPLIED | GERMANIUM | ABSORPTION | GAAS
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 09/2012, Volume 27, Issue 9, p. 94006
A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future... 
RECOMBINATION | PHYSICS, CONDENSED MATTER | INFRARED-ABSORPTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | OPTICAL-PROPERTIES | DOPED N-TYPE | ELECTROLUMINESCENCE | ENGINEERING, ELECTRICAL & ELECTRONIC | EPITAXIAL-FILMS | GERMANIUM | BAND-GAP SHRINKAGE | EMISSION | GAIN
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 11/2015, Volume 650, pp. 658 - 663
Current–voltage ( ) characteristics of Au/n-type Ge Schottky barrier diodes (SBDs) with and without graphene interlayer were investigated in the temperature... 
Gaussian distribution | Barrier inhomogeneity | Interlayer | Schottky barrier diode | Graphene | n-type Ge | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | CHEMISTRY, PHYSICAL | HEIGHT | GAAS | JUNCTION | RICHARDSON CONSTANT | Circuit components | Graphite | Temperature dependence | Interlayers | Normal distribution | Barriers | Germanium | Inhomogeneity | Diodes
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 11/2009, Volume 80, Issue 20
The electronic and structural properties of Si in ZnO are studied using density functional calculations with both the generalized gradient approximation and a... 
AUGMENTED-WAVE METHOD | HYDROGEN | PHYSICS, CONDENSED MATTER | N-TYPE | ZINC-OXIDE | GROWTH | TOTAL-ENERGY CALCULATIONS | BASIS-SET
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2016, Volume 120, Issue 16, p. 165108
Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75 < x G e < 1 , a... 
N-TYPE | PHYSICS, APPLIED | GERMANIUM | PHOTODETECTORS | TEMPERATURE | HETEROSTRUCTURES | SILICON | DIFFUSION | Silicon compounds | Thermal properties | Diffusion | Semiconductor doping | Analysis | Electric properties
Journal Article
Materials Science & Engineering B, ISSN 0921-5107, 10/2017, Volume 224, pp. 103 - 109
The dependence of Schottky barrier height (SBH) of metal/ITO/n-Ge contacts on ITO interlayer thickness is experimentally investigated. The SBH of... 
Germanium | Interdiffusion | Schottky barrier height | Indium tin oxide | PHYSICS, CONDENSED MATTER | N-TYPE GE | MATERIALS SCIENCE, MULTIDISCIPLINARY | SOURCE/DRAIN STRUCTURE | Indium | Analysis
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2017, Volume 7, Issue 1, pp. 13182 - 7
The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of... 
N-TYPE GERMANIUM | IRRADIATION | ENERGY | TEMPERATURE-DEPENDENCE | IMPLANTATION | MULTIDISCIPLINARY SCIENCES | DIFFUSION | DAMAGE | Annealing | Point defects | Temperature effects | Migration | Radiation
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 08/2015, Volume 30, Issue 10, p. 105008
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2014, Volume 115, Issue 5, p. 53501
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 08/2017, Volume 32, Issue 9, p. 94003
In this work we present the As doping, via AsH3, of Ge1-xSnx and SiyGe1-y-xSnx alloys grown in a commercial RPCVD reactor. The composition, thickness, and... 
arsenic doping | germanium tin | silicon germanium tin | n-type doping | SYSTEM | PHYSICS, CONDENSED MATTER | GERMANIUM | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | GROWTH | DEFECT | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 07/2019, Volume 794, pp. 218 - 222
Journal Article
Acta Materialia, ISSN 1359-6454, 12/2017, Volume 141, pp. 217 - 229
The -type I-V-VI AgBiSe features intrinsically low due to the anharmonicity of chemical bonds. Experimentally-determined isothermal section guides the starting... 
Bi2Se3 nano-precipitate | Thermoelectric material | n-type AgBiSe2 | Isothermal section | n-type AgBiSe | nano-precipitate | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING
Journal Article
Acta Materialia, ISSN 1359-6454, 2011, Volume 59, Issue 6, pp. 2368 - 2384
In the Ag–Ba–Ge system the clathrate type-Ι solid solution, Ba Ag Ge □ , extends at 800 °C from binary Ba Ge □ (□ is a vacancy) to Ba Ag Ge . For the clathrate... 
Clathrate | Electronic structure | Transport properties | Phase diagram | n-Type | WAVE | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | STATE | TOTAL-ENERGY CALCULATIONS | Analysis | Clathrate compounds | Silver | Fermi surfaces | Solid solutions | X-rays | Germanium | Site preference (crystals) | Clathrates | Lattice vacancies
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 10/2018, Volume 10, Issue 43, pp. 37198 - 37206
We report a versatile chemical vapor deposition (CVD) method to dope Ge films with Ga atoms in situ over a wide concentration range spanning from 3 × 1018 to... 
Research | dimethylamine-gallane | CMOS compatible | Ga doping | germanium | tetragermane | hyperdoped Ge | direct gap Ge | N-TYPE | ACTIVATION | FILM | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | SILICON | NANOSCIENCE & NANOTECHNOLOGY | LAYERS | DIFFUSION
Journal Article
Acta Materialia, ISSN 1359-6454, 01/2017, Volume 122, pp. 120 - 129
The capability of converting waste heat into electricity characterizes the technology of thermoelectricity as a feasible solution in dealing with the energy... 
Bi2Te3 | Thermoelectric materials | p-n transition | Isothermal section | SYSTEM | PHASES | TRANSPORT-PROPERTIES | (BI,SB)TE-3 | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | BISMUTH TELLURIDE | CHALCOGENIDE GLASSES | BULK | ALLOYS | Transits | Solubility | Alloys | N-type semiconductors | Feasibility | Impact tests | Waste heat | Thermoelectricity
Journal Article
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