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Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, 10/2012, Volume 12, Issue 10, pp. 7604 - 7618
NAND Flash memory has scaled at phenomenal speed in the last decade and conventional floating gate (FG) Flash memory has now commenced volume production in the... 
BE-SONOS | 3D Memory | MANOS | NAND Flash | VG (Vertical Gate) 3D Memory | Scaling Limitation | Charge Trapping NVM | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 06/2013, Volume 60, Issue 3, pp. 1953 - 1969
Journal Article
Advanced Materials, ISSN 0935-9648, 07/2015, Volume 27, Issue 25, pp. 3811 - 3816
Journal Article
Proceedings of the IEEE, ISSN 0018-9219, 09/2017, Volume 105, Issue 9, pp. 1634 - 1649
Journal Article
IEEE Journal on Selected Areas in Communications, ISSN 0733-8716, 09/2016, Volume 34, Issue 9, pp. 2325 - 2335
In the write process of multilevel per cell (MLC) flash memories, an iterative approach is used to mitigate the monotonicity problem. The monotonicity in... 
Microprocessors | Computer architecture | latency | Programming | Logic gates | ISPP | lifetime | Threshold voltage | MLC NAND flash | renewal process | Transistors | ICI interference | NAND FLASH | INTERFERENCE | CHANNELS | TELECOMMUNICATIONS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Proceedings of the 48th Design Automation Conference, ISSN 0738-100X, 06/2011, pp. 17 - 22
The new write constraints of multi-level cell (MLC) NAND flash memory make most of the existing flash translation layer (FTL) schemes inefficient or... 
flash translation layer | address mapping | garbage collection | MLC NAND flash memory | Garbage collection | System performance | Memory management | Flash memory | Random access memory | Ash | Benchmark testing | Address mapping | Time factors | Flash translation layer
Conference Proceeding
Proceedings of the Conference on design, automation and test in europe, ISSN 1530-1591, 03/2012, pp. 521 - 526
As NAND flash memory manufacturers scale down to smaller process technology nodes and store more bits per cell, reliability and endurance of flash memory... 
endurance | NAND flash | error patterns | reliability | error correction | Error analysis | Flash memory | Interference | Programming | Logic gates | Threshold voltage | Electric fields
Conference Proceeding
IEEE Journal on Selected Areas in Communications, ISSN 0733-8716, 2016, Volume PP, Issue 99
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 04/2019, Volume 27, Issue 4, pp. 988 - 991
Journal Article
IEEE Transactions on Computers, ISSN 0018-9340, 07/2006, Volume 55, Issue 7, pp. 906 - 912
In this paper, we present an efficient flash file system for flash memory storage. Flash memory, especially NAND flash memory, has become a major method for... 
scan | NAND flash memory | flash translation layer | Flash file system | garbage collection | Memory management | Garbage collection | Scan | Flash translation layer | COMPUTER SCIENCE, HARDWARE & ARCHITECTURE | flash file system | ENGINEERING, ELECTRICAL & ELECTRONIC | Flash memory | Microcontrollers | Design and construction
Journal Article
Proceedings of the Conference on design, automation and test in europe, ISSN 1530-1591, 03/2013, pp. 1285 - 1290
Conference Proceeding
IEEE Electron Device Letters, ISSN 0741-3106, 01/2013, Volume 34, Issue 1, pp. 48 - 50
Journal Article
Journal Article
2012 IEEE 30th International Conference on Computer Design (ICCD), ISSN 1063-6404, 09/2012, pp. 94 - 101
With the continued scaling of NAND flash and multi-level cell technology, flash-based storage has gained widespread use in systems ranging from mobile... 
multi-level cell (MLC) | Nonvolatile memory | Flash memory | Bit error rate | NAND Flash | reliability | Programming | Threshold voltage | Error correction codes | error correction
Conference Proceeding
Microelectronic Engineering, ISSN 0167-9317, 2009, Volume 86, Issue 3, pp. 283 - 286
Flash memory application has seen explosive growth in recent years and this trend is likely to continue because new and more demanding applications are... 
NOR | Floating gate | Band-to-band tunneling hot hole | Flash memory | Bandgap engineered SONOS | Channel hot electron | NAND | Charge trapping device | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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